PHILIPS BY614

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D189
BY614
Miniature high-voltage
soft-recovery rectifier
Product specification
Supersedes data of May 1996
1996 Sep 26
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
FEATURES
DESCRIPTION
• Glass passivated
Miniature glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
• Low leakage current
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
• Excellent stability
• Soft-recovery switching
characteristics
k
handbook, halfpage
a
• Very compact construction.
MAM162
APPLICATIONS
The cathode lead is marked with a black band.
• Miniature high-voltage assemblies
such as voltage multipliers.
Fig.1 Simplified outline (SOD61H2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRSM
non-repetitive peak reverse voltage
−
2200
V
VRRM
repetitive peak reverse voltage
−
2200
V
VRW
working reverse voltage
−
2000
V
VR
continuous reverse voltage
−
2000
V
IF(AV)
average forward current
−
50
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
−
1
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
1996 Sep 26
averaged over any 20 ms period;
PCB mounting (see Fig.5);
Tamb = 65 °C; see Fig.2;
see also Fig.3
t ≤ 10 ms; half sinewave;
Tj = Tj max prior to surge;
VR = VRWmax
2
A
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
−
MAX.
UNIT
VF
forward voltage
IR
reverse current
VR = VRWmax; Tj = 120 °C
−
−
3
µA
Qr
recovery charge
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.6
−
−
1
nC
tf
fall time
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.6
100
−
−
ns
trr
reverse recovery time
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.6
−
−
300
ns
Cd
diode capacitance
VR = 0 V; f = 1 MHz
−
2
−
pF
IF = 50 mA; Tj = Tj max; see Fig.4
6
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
100
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
155
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.5.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
GRAPHICAL DATA
MBH389
80
MBH390
1000
handbook, halfpage
handbook, halfpage
IF(AV)
(mA)
a = 3 2.5 2 1.57 1.42
P
(mW)
60
40
500
20
0
0
0
40
80
160
120
Tamb (°C)
0
50
a = 1.57; δ = 0.5; VR = VRWmax; device mounted as shown in Fig.5.
a = IF(RMS)/IF(AV); δ = 0.5; VR = VRWmax.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
IF(AV) (mA)
100
Maximum steady state power dissipation
(forward plus leakage losses) as a function
of average forward current.
MBH402
200
handbook, halfpage
50
handbook, halfpage
25
IF
(mA)
7
50
100
2
3
0
0
10
VF (V)
20
MGA200
Dotted line: Tj = 150 °C.
Solid line: Tj = 25 °C.
Dimensions in mm.
Fig.4
Forward current as a function of maximum
forward voltage.
1996 Sep 26
Fig.5 Device mounted on a printed-circuit board.
4
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
handbook,
halfpage
I
F
dI F
dt
t rr
10% t
Qr
90%
IR
tf
MGD569
Fig.6 Reverse recovery definitions.
1996 Sep 26
5
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
PACKAGE OUTLINE
k
a
0.6
handbook, full pagewidth
3
max
2.2
max
32.5 min
3
max
32.5 min
MGD602
Dimensions in mm.
The marking band indicates the cathode.
Fig.7 SOD61H2.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
6