Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL QUICK REFERENCE DATA d VDSS = 500 V ID = 10.9 A g RDS(ON) ≤ 0.55 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB11N50E is supplied in the SOT404 surface mounting package. PINNING PIN SOT404 SOT429 (TO247) DESCRIPTION 1 gate 2 drain1 3 source tab 2 tab drain 1 1 3 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS VDGR VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ IDM PD Tj, Tstg Pulsed drain current Total dissipation Operating junction and storage temperature range - 55 500 500 ± 30 10.9 6.9 44 156 150 V V V A A A W ˚C Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C 1 It is not possible to make connection to pin 2 of the SOT404 package. December 1998 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHB11N50E, PHW11N50E AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR CONDITIONS MIN. MAX. UNIT - 707 mJ - 18 mJ - 10.9 A Non-repetitive avalanche energy Unclamped inductive load, IAS = 10.9 A; tp = 0.2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V Repetitive avalanche energy2 IAR = 10.9 A; tp = 2.5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V Repetitive and non-repetitive avalanche current THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT429 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT - - 0.8 K/W - 60 45 50 - K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. V(BR)DSS VGS = 0 V; ID = 0.25 mA 500 - - V VDS = VGS; ID = 0.25 mA - 0.1 - %/K 2.0 4 - 0.47 3.0 6.5 1 60 10 0.55 4.0 25 500 200 Ω V S µA µA nA Drain-source breakdown voltage ∆V(BR)DSS / Drain-source breakdown ∆Tj voltage temperature coefficient Drain-source on resistance RDS(ON) VGS(TO) Gate threshold voltage gfs Forward transconductance Drain-source leakage current IDSS TYP. MAX. UNIT IGSS VGS = 10 V; ID = 5.5 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 5.5 A VDS = 500 V; VGS = 0 V VDS = 400 V; VGS = 0 V; Tj = 125 ˚C Gate-source leakage current VGS = ±30 V; VDS = 0 V Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 11 A; VDD = 400 V; VGS = 10 V - 75 7 39 100 12 55 nC nC nC td(on) tr td(off) tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 250 V; RD = 22 Ω; RG = 5.6 Ω - 11 38 92 40 - ns ns ns ns Ld Ld Internal drain inductance Internal drain inductance - 3.5 4.5 - nH nH Ls Internal source inductance Measured from tab to centre of die Measured from drain lead to centre of die (SOT429 package only) Measured from source lead to source bond pad - 7.5 - nH Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1326 182 96 - pF pF pF 2 pulse width and repetition rate limited by Tj max. December 1998 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHB11N50E, PHW11N50E SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IS Tmb = 25˚C - - 10.9 A Tmb = 25˚C - - 44 A VSD Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage IS = 11 A; VGS = 0 V - - 1.2 V trr Qrr Reverse recovery time Reverse recovery charge IS = 11 A; VGS = 0 V; dI/dt = 100 A/µs - 630 6.9 - ns µC ISM December 1998 MIN. 3 TYP. MAX. UNIT Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated 120 PHB11N50E, PHW11N50E Normalised Power Derating PD% Transient Thermal Impedance, Zth j-a (K/W) PHP11N50E 110 1 100 90 D = 0.5 80 0.2 70 0.1 60 50 0.1 0.05 PD 0.02 40 0.01 tp D = tp/T Single pulse 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 t T 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% Drain Current, ID (A) 110 8 100 90 Tj = 25 C PHP11N50E VGS = 10 V 7 80 6 5V 70 5 60 50 4.8 V 4 40 3 30 2 20 10 1 4.6 V 4.4 V 4.2 V 4V 0 0 0 20 40 60 80 Tmb / C 100 120 0 140 1 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V 2 3 4 Drain-Source Voltage, VDS (V) 5 Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS Drain-Source On Resistance, RDS(on) (Ohms) 100 Peak Pulsed Drain Current, IDM (A) RDS(on) = VDS/ ID 1.4 PHP11N50E 4.2V 4.4V 4V Tj = 25 C 4.6V 1.2 tp = 10 us 4.8V 1 10 1 d.c. 100 us 0.8 1 ms 0.6 10 ms 0.4 5V VGS = 10 V 100 ms 0.2 PHP11N50E 0.1 0 10 100 Drain-Source Voltage, VDS (V) 1000 0 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp December 1998 1 2 3 4 5 Drain Current, ID (A) 6 7 8 Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS 4 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHB11N50E, PHW11N50E VGS(TO) / V PHP11N50E Drain current, ID (A) 20 max. 4 VDS > ID X RDS(ON) 18 16 14 typ. 3 12 10 min. 8 2 150 C 6 Tj = 25 C 4 1 2 0 0 1 2 3 4 5 6 7 0 -60 Gate-source voltage, VGS (V) -20 0 20 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj 1E-01 PHP11N50E Transconductance, gfs (S) -40 SUB-THRESHOLD CONDUCTION ID / A 12 VDS > ID X RDS(ON) Tj = 25 C 1E-02 10 150 C 8 2% 1E-03 typ 98 % 6 1E-04 4 2 1E-05 0 0 5 10 15 1E-06 20 0 Drain current, ID (A) Fig.8. Typical transconductance. gfs = f(ID); parameter Tj 1 2 VGS / V 3 4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised RDS(ON) = f(Tj) a 10000 2 Capacitances, Ciss, Coss, Crss (pF) PHP11N50E Ciss 1000 1 Coss 100 Crss 10 0 -60 -40 -20 0 20 40 60 Tj / C 80 0.1 100 120 140 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5.5 A; VGS = 10 V December 1998 1 10 Drain-source voltage, VDS (V) 100 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 5 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHB11N50E, PHW11N50E Source-Drain Diode Current, IF (A) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 PHP11N50E 20 PHP11N50E Gate-source voltage, VGS (V) 18 ID = 11A Tj = 25 C 16 14 200V 12 100 V 10 VDD=400V 150 C 8 Tj = 25 C 6 4 2 0 0 20 40 60 80 Gate charge, QG (nC) 100 120 0 400 0.6 0.8 1 1.2 Fig.16. Source-Drain diode characteristic. IF = f(VSDS); parameter Tj PHP11N50E Switching times, td(on), tr, td(off), tf (ns) 100 td(off) VDD = 250V 0.4 Drain-Source Voltage, VSDS (V) Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); parameter VDS 450 0.2 Non-repetitive Avalanche current, IAS (A) RD = 22 Ohms Tj prior to avalanche = 25 C 350 10 300 250 125 C 200 1 tf 150 VDS tp tr 100 ID PHP12N50E td(on) 50 0.1 1E-06 0 0 10 20 30 Gate resistance, RG (Ohms) 40 50 1E-04 1E-03 1E-02 Avalanche time, tp (s) Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) 1.15 1E-05 Fig.17. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tp); unclamped inductive load Normalised Drain-source breakdown voltage V(BR)DSS @ Tj V(BR)DSS @ 25 C 100 1.1 1.05 10 1 1 Maximum Repetitive Avalanche Current, IAR (A) Tj prior to avalanche = 25 C 125 C 0.95 0.1 0.9 0.85 -100 PHP12N50E 0.01 1E-06 -50 0 50 Tj, Junction temperature (C) 100 150 1E-04 1E-03 1E-02 Avalanche time, tp (s) Fig.15. Normalised drain-source breakdown voltage; V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj) December 1998 1E-05 Fig.18. Maximum permissible repetitive avalanche current (IAR) versus avalanche time (tp) 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHB11N50E, PHW11N50E MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.19. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.20. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". December 1998 7 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHB11N50E, PHW11N50E MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.21. SOT429; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8". December 1998 8 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHB11N50E, PHW11N50E DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 9 Rev 1.000