RGP25A thru RGP25M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER ® • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-201AD • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For general purpose of medium frequency rectification. PRIMARY CHARACTERISTICS IF(AV) 2.5 A VRRM 50 V to 1000 V IFSM 100 A trr 150 ns, 250 ns, 500 ns IR 5.0 μA VF 1.3 V TJ max. 175 °C MECHANICAL DATA Case: DO-201AD, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RGP25A RGP25B RGP25D RGP25G RGP25J RGP25K RGP25M UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 2.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at TA = 55 °C IR(AV) 100 μA TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88703 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RGP25A thru RGP25M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 2.5 A SYMBOL RGP25A RGP25B RGP25D RGP25G RGP25J RGP25K RGP25M UNIT VF Maximum DC reverse current at rated DC blocking voltage TA= 125 °C Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ 1.3 TA= 25 °C V 5.0 IR μA 200 150 250 500 ns 60 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RGP25A RGP25B RGP25D RGP25G RGP25J RGP25K RGP25M UNIT RJA (1) Typical thermal resistance 20 °C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE RGP25J-E3/54 1.28 54 1400 13" diameter paper tape and reel RGP25J-E3/73 1.28 73 1000 Ammo pack packaging RGP25JHE3/54 (1) 1.28 54 1400 13" diameter paper tape and reel (1) 1.28 73 1000 Ammo pack packaging RGP25JHE3/73 Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 2.5 2.0 1.5 1.0 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.5 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 0 10 20 40 60 80 100 120 140 160 180 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88703 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RGP25A thru RGP25M Vishay General Semiconductor 100 1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.01 0.4 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Instantaneous Forward Current (A) 10 10 0.6 0.8 1.0 1.2 1.4 1 1.6 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Leakage Current (μA) 100 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88703 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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