M366S1623DT0 PC100 Unbuffered DIMM M366S1623DT0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S1623DT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. • Performance range • • • • • • • • Part No. Max Freq. (Speed) M366S1623DT0-C80 125MHz (8ns @ CL=3) M366S1623DT0-C1H 100MHz (10ns @ CL=2) M366S1623DT0-C1L 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect with EEPROM PCB : Height (1,375mil) , double sided component PIN CONFIGURATIONS (Front side/back side) Pin Front 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VDD DQ14 DQ15 *CB0 *CB1 VSS NC NC VDD WE DQM0 Pin Front Pin Front 29 DQM1 57 58 CS0 30 31 DU 59 60 32 VSS 61 33 A0 62 34 A2 35 A4 63 64 36 A6 65 37 A8 38 A10/AP 66 39 BA1 67 68 40 VDD 69 41 VDD 42 CLK0 70 43 VSS 71 72 44 DU 73 45 CS2 46 DQM2 74 47 DQM3 75 76 48 DU 77 49 VDD 78 50 NC 51 79 NC 52 *CB2 80 53 *CB3 81 82 54 VSS 55 DQ16 83 56 DQ17 84 DQ18 DQ19 VDD DQ20 NC *VREF CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 VSS CLK2 NC WP **SDA **SCL VDD Pin 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 Back VSS DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VDD DQ46 DQ47 *CB4 *CB5 VSS NC NC VDD CAS DQM4 Pin 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 Back DQM5 CS1 RAS VSS A1 A3 A5 A7 A9 BA0 A11 VDD CLK1 *A12 VSS CKE0 CS3 DQM6 DQM7 *A13 VDD NC NC *CB6 *CB7 VSS DQ48 DQ49 PIN NAMES Pin 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Back DQ50 DQ51 VDD DQ52 NC *VREF NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VDD DQ60 DQ61 DQ62 DQ63 VSS CLK3 NC **SA0 **SA1 **SA2 VDD Pin Name Function A0 ~ A11 Address input (Multiplexed) BA0 ~ BA1 Select bank DQ0 ~ DQ63 Data input/output CLK0 ~ CLK3 Clock input CKE0 ~ CKE1 Clock enable input CS0 ~ CS3 Chip select input RAS Row address strobe CAS Column address strobe WE Write enable DQM0 ~ 7 DQM VDD Power supply (3.3V) VSS Ground *VREF Power supply for reference SDA Serial data I/O SCL Serial clock SA0 ~ 2 Address in EEPROM WP Write protection DU Don′t use NC No connection * These pins are not used in this module. ** These pins should be NC in the system which does not support SPD. SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice. Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM PIN CONFIGURATION DESCRIPTION Pin Name Input Function CLK System clock Active on the positive going edge to sample all inputs. CS Chip select Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM. CKE Clock enable Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. CKE should be enabled 1CLK+tSS prior to valid command. A0 ~ A11 Address Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : CA0 ~ CA8 BA0 ~ BA1 Bank select address Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. RAS Row address strobe Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge. CAS Column address strobe Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. WE Write enable Enables write operation and row precharge. Latches data in starting from CAS, WE active. DQM0 ~ 7 Data input/output mask Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) DQ0 ~ 63 Data input/output Data inputs/outputs are multiplexed on the same pins. WP Write protection WP pin is connected to V SS through 47KΩ Resistor. When WP is "high", EEPROM Programming will be inhibited and the entire memory will be write-protected. VDD/VSS Power supply/ground Power and ground for the input buffers and the core logic. Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM FUNCTIONAL BLOCK DIAGRAM CS1 CS0 DQM0 • DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CS3 CS2 DQM2 DQM4 DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 • CS DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS • DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 • • U0 DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 U8 DQM5 U1 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 U9 DQM6 U2 DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 U10 • DQM3 DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 A0 ~ An, BA0 & 1 DQM7 CS U3 CS DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 U4 DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 RAS SDRAM U0 ~ U15 CAS SDRAM U0 ~ U15 WE SDRAM U0 ~ U15 SDRAM U0 ~ U7 DQM CS DQ0 DQ1 DQ2 U13 DQ3 DQ4 DQ5 DQ6 DQ7 CS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 U11 • DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS U6 VDD Vss • • DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS U7 SCL DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS U14 U15 10KΩ CKE1 • SDA A0 A1 To all SDRAMs A2 SA0 SA1 SA2 • WP 47KΩ SDRAM U8 ~ U15 10Ω • CLK0/1/2/3 U0/U1/U2/U3 U4/U5/U6/U7 • • • • • CS Serial PD VDD Every DQpin of SDRAM Two 0.1uF Capacitors per each SDRAM DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 • 10Ω DQn U12 • DQM CS DQ0 DQ1 DQ2 U5 DQ3 DQ4 DQ5 DQ6 DQ7 SDRAM U0 ~ U15 CKE0 CS • • CS • DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 3.3pF U8/U9/U10/U11 U12/U13/U14/U15 - Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V TSTG -55 ~ +150 °C Power dissipation PD 16 W Short circuit current IOS 50 mA Storage temperature Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) Parameter Supply voltage Symbol Min Typ Max Unit VDD, VDDQ 3.0 3.3 3.6 V Note Input logic high voltage VIH 2.0 3.0 VDDQ+0.3 V 1 Input logic low voltage VIL -0.3 0 0.8 V 2 Output logic high voltage VOH 2.4 - - V IOH = -2mA Output logic low voltage VOL - - 0.4 V IOL = 2mA ILI -10 - 10 uA 3 Input leakage current Note : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV) CAPACITANCE Pin Address (A0 ~ A11, BA0 ~ BA1) Symbol Min Max Unit CADD 45 85 pF CIN 45 85 pF CKE (CKE0 ~ CKE1) C CKE 25 45 pF Clock (CLK0 ~ CLK3) CCLK 15 21 pF RAS, CAS, WE CCS 15 25 pF DQM (DQM0 ~ DQM7) CDQM 10 15 pF DQ (DQ0 ~ DQ63) COUT 13 18 pF CS (CS0~CS3) Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating current (one Bank Active) Precharge standby current in power-down mode Symbol ICC1 ICC2P ICC2PS ICC2N Precharge standby current in non power-down mode ICC2NS Active standby current in power-down mode Active standby current in non power-down mode (One bank active) ICC3P ICC3PS ICC3N ICC3NS Version Test Condition Burst length =1 tRC ≥ tRC(min) IO = 0 mA -80 -1H -1L 800 760 760 CKE ≤ VIL(max), tCC = 10ns 16 CKE & CLK ≤ VIL(max), tCC = ∞ 16 CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 240 Unit Note mA 1 mA mA CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 96 CKE ≤ VIL(max), tCC = 10ns 48 CKE & CLK ≤ VIL(max), tCC = ∞ 48 CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 400 mA CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 240 mA mA ICC4 IO = 0 mA Page burst 4Banks activated tCCD = 2CLKs 1,080 960 960 mA 1 Refresh current ICC5 tRC ≥ tRC(min) 1,240 1,200 1,200 mA 2 Self refresh current ICC6 CKE ≤ 0.2V Operating current (Burst mode) 16 mA Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ) Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf = 1/1 ns 1.4 V See Fig. 2 3.3V Vtt = 1.4V 1200Ω • Output 50Ω VOH (DC) = 2.4V, IOH = -2mA VOL (DC) = 0.4V, IOL = 2mA • • Z0 = 50Ω Output 50pF 870Ω 50pF • (Fig. 1) DC output load circuit (Fig. 2) AC output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Version Symbol -80 -1H -1L Unit Note Row active to row active delay tRRD(min) 16 20 20 ns 1 RAS to CAS delay tRCD(min) 20 20 20 ns 1 Row precharge time tRP(min) 20 20 20 ns 1 tRAS(min) 48 50 50 ns 1 Row active time tRAS(max) Row cycle time tRC(min) Last data in to row precharge tRDL(min) Last data in to Active delay tDAL(min) Last data in to new col. address delay tCDL(min) Last data in to burst stop Col. address to col. address delay Number of valid output data 100 68 us ns 1 2 CLK 2,5 2 CLK + 20 ns - 5 1 CLK 2 tBDL(min) 1 CLK 2 tCCD(min) 1 CLK 3 ea 4 CAS latency=3 CAS latency=2 70 70 2 - 1 Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. For -80/1H/1L, tRDL=1CLK and tDAL=1CLK+20ns is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns. Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter -80 Symbol Min CLK cycle time CAS latency=3 tCC CAS latency=2 CLK to valid output delay CAS latency=3 Output data hold time CAS latency=3 8 -1H Max 1000 tSAC CAS latency=2 Min 10 -1L Max 1000 10 Min 10 Unit Note ns 1 ns 1,2 ns 2 Max 1000 12 6 6 6 - 6 7 3 3 3 - 3 3 tCH 3 3 3 ns 3 CLK low pulse width tCL 3 3 3 ns 3 Input setup time tSS 2 2 2 ns 3 Input hold time tSH 1 1 1 ns 3 CLK to output in Low-Z tSLZ 1 1 1 ns 2 CAS latency=2 CLK high pulse width CLK to output in Hi-Z tOH CAS latency=3 CAS latency=2 tSHZ 6 6 6 - 6 7 ns Notes : 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Refresh CKEn CS RAS CAS WE DQM H X L L L L X OP code L L L H X X H Entry Self refresh Exit Bank active & row addr. Read & column address Auto precharge disable Write & column address Auto precharge disable H BA0,1 L H H X H X L H H H H X X X L L H H X V L H L H X V X H X L H L L H X L L H H L H L L H L Exit L H Entry H L Precharge power down mode Exit L DQM H No operation command H H H X X X L V V V X X X X H X X X L H H H H X X X L V V V X X H X X X L H H H 3 3 X L V Column address (A0 ~ A8) L X X All banks Entry 3 Row address Column address (A0 ~ A8) H X Note 1,2 X H H Clock suspend or active power down A11, A9 ~ A0 3 Auto precharge enable Bank selection A10/AP L Auto precharge enable Burst stop Precharge CKEn-1 X V L X H 4 4,5 4 4,5 6 X X X X X X X V X X X 7 (V=Valid, X=Don′t care, H=Logic high, L=Logic low) Notes : 1. OP Code : Operand code A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS) 2. MRS can be issued only at all banks precharge state. A new command can be issued after 2 clock cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected. If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected. 5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2) Rev. 0.0 Jun. 1999 M366S1623DT0 PC100 Unbuffered DIMM PACKAGE DIMENSIONS Units : Inches (Millimeters) 5.250 (133.350) 5.014 (127.350) R 0.079 (R 2.000) 0.157 ± 0.004 (4.000 ± 0.100) 0.350 (8.890) B A .118DIA ± 0.004 (3.000DIA ± 0.100) 0.250 (6.350) .450 (11.430) 0.100 Min (2.540 Min) 0.700 (17.780) 0.118 (3.000) 1.375 (34.925) 0.118 C 0.250 (6.350) 1.450 (36.830) 2.150 (54.61) 4.550 (115.57) 0.165 Min (4.19 Min) 0.150 Max (3.81 Max) 0.100 Min 0.250 (6.350) 0.250 (6.350) 0.123 ± 0.005 (3.125 ± 0.125) 0.079 ± 0.004 (2.000 ± 0.100) Detail A 0.123 ± 0.005 (3.125 ± 0.125) 0.079 ± 0.004 (2.000 ± 0.100) Detail B (2.540 Min) 0.050 ± 0.0039 (1.270 ± 0.10) 0.039 ± 0.002 (1.000 ± 0.050) 0.008 ±0.006 (0.200 ±0.150) 0.050 (1.270) Detail C Tolerances : ± 0.005(.13) unless otherwise specified The used device is 8Mx8 SDRAM, TSOP SDRAM Part No. : K4S640832D Rev. 0.0 Jun. 1999