256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 March 2005 Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information Density Organization Component Composition Number of Rank Height M470T3354CZ0-C(L)D6/E6/D5/CC 256MB 32Mx64 32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*4 1 30mm M470T6554CZ0-C(L)D6/E6/D5/CC 512MB 64Mx64 32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*8 2 30mm M470T2953CZ0-C(L)D6/E6/D5/CC 1GB 128Mx64 64Mx8(K4T51083QC-C(L)D6/E6/D5/CC)*16 2 30mm Part Number Note: “Z” of Part number stand for Lead-free products. Features • Performance range D6(DDR2-667) E6(DDR2-667) D5(DDR2-533) CC(DDR2-400) Unit Speed@CL3 400 400 400 400 Mbps Speed@CL4 667 533 533 400 Mbps Speed@CL5 667 667 533 - Mbps CL-tRCD-tRP 4-4-4 5-5-5 4-4-4 3-3-3 CK • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin • 4 independent internal banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Read Latency(RL) -1 • Burst Length: 4 , 8(Interleave/nibble sequential) • Programmable Sequential / Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) • Off-Chip Driver(OCD) Impedance Adjustment • On Die Termination with selectable values(50/75/150 ohms or disable) • PASR(Partial Array Self Refresh) • Average Refesh Period 7.8us at lower a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C - support High Temperature Self-Refresh rate enable feature • Package: 60ball FBGA - 128Mx4/64Mx8 , 84ball FBGA 32Mx16 - RoHS Compliant Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram. Address Configuration Organization Row Address Column Address Bank Address Auto Precharge 64Mx8(512Mb) based Module 32Mx16(512Mb) based Module A0-A13 A0-A9 BA0-BA1 A10 A0-A12 A0-A9 BA0-BA1 A10 Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Pin Configurations (Front side/Back side) Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1 VREF 2 VSS 51 DQS2 52 DM2 101 A1 102 A0 151 DQ42 152 DQ46 3 VSS 4 DQ4 53 VSS 54 VSS 103 VDD 104 VDD 153 DQ43 154 DQ47 5 DQ0 6 DQ5 55 DQ18 56 DQ22 105 A10/AP 106 BA1 155 VSS 156 VSS 7 DQ1 8 VSS 57 DQ19 58 DQ23 107 BA0 108 RAS 157 DQ48 158 DQ52 DQ53 9 VSS 10 DM0 59 VSS 60 VSS 109 WE 110 S0 159 DQ49 160 11 DQS0 12 VSS 61 DQ24 62 DQ28 111 VDD 112 VDD 161 VSS 162 VSS 13 14 DQ6 63 CAS 114 ODT0 163 CK1 65 66 115 NC/S1 116 A13 165 NC, TEST VSS 164 DQ7 DQ29 VSS 113 16 DQ25 VSS 64 15 DQS0 VSS 166 CK1 17 DQ2 18 VSS 67 DM3 68 DQS3 117 VDD 118 VDD 167 DQS6 168 VSS 19 20 DQ12 69 121 122 171 DQS6 VSS 170 72 NC VSS 169 71 NC/ODT1 VSS 120 DQ13 DQS3 VSS 119 22 NC VSS 70 21 DQ3 VSS DM6 VSS 23 DQ8 24 VSS 73 DQ26 74 DQ30 123 DQ32 124 DQ36 173 DQ50 174 DQ54 25 26 DQ31 VSS 125 DQ37 VSS 175 177 DQ51 VSS 176 127 DQ33 VSS 126 77 DQ27 VSS 76 28 DM1 VSS 75 27 DQ9 VSS 178 DQ55 VSS 29 DQS1 30 CK0 79 80 DQS4 130 DQ56 180 DQ60 32 CK0 81 82 131 DQS4 132 DM4 VSS 179 DQS1 NC/CKE1 VDD 129 31 CKE0 VDD 181 DQ57 182 DQ61 33 VSS 34 VSS 83 NC 84 NC 133 VSS 134 DQ38 183 VSS 184 VSS 35 DQ10 36 DQ14 85 86 DQ34 136 DQS7 DQ15 87 88 137 DQ35 138 187 DM7 VSS 186 38 DQ39 VSS 185 DQ11 NC VDD 135 37 BA2 VDD 188 DQS7 39 VSS 40 VSS 89 A12 90 A11 139 VSS 140 DQ44 189 DQ58 190 VSS 41 VSS 42 VSS 91 A9 92 A7 141 DQ40 142 DQ45 191 DQ59 192 DQ62 DQ63 78 128 172 43 DQ16 44 DQ20 93 A8 94 A6 143 DQ41 144 VSS 193 VSS 194 45 DQ17 46 DQ21 95 VDD 96 VDD 145 VSS 146 DQS5 195 SDA 196 VSS 47 VSS 48 VSS 97 A5 98 A4 147 DM5 148 DQS5 197 SCL 198 SA0 49 DQS2 50 NC 99 A3 100 A2 149 VSS 150 VSS 199 VDDSPD 200 SA1 Note : NC = No Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules. SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice. Pin Description Pin Name CK0,CK1 CK0,CK1 CKE0,CKE1 Function Clock Inputs, positive line Clock Inputs, negative line Clock Enables Pin Name SDA SA1,SA0 Function SPD Data Input/Output SPD address DQ0~DQ63 Data Input/Output RAS Row Address Strobe DM0~DM7 Data Masks CAS Column Address Strobe DQS0~DQS7 Data strobes WE Write Enable DQS0~DQS7 Data strobes complement S0,S1 Chip Selects TEST A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL Logic Analyzer specific test pin (No connect on So-DIMM) Address Inputs VDD Core and I/O Power Address Input/Autoprecharge VSS Ground SDRAM Bank Address VREF Input/Output Reference On-die termination control Serial Presence Detect(SPD) Clock Input VDDSPD NC SPD Power Spare pins, No connect Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Input/Output Functional Description Symbol Type Function CK0-CK1 CK0-CK1 Input The system clock inputs. All address and command lines are sampled on the cross point of the rising edge of CK and falling edge of CK . A Delay Locked Loop (DLL) circuit is driven from the clock input and output timing for read operations is synchronized to the input clock. CKE0-CKE1 Input Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low, By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refesh mode. S0-S1 Input Enables the associated DDR2 SDRAM command decoder when low and disables the command decoder when high. When the command decoder is disabled, new commands are ignored but previous operations continue. Rank 0 is selected by S0, Rank 1 is selected by S1. Ranks are also called “Physical banks”. RAS, CAS, WE Input When sampled at the cross point of the rising edge of CK and falling edge of CK, CAS, RAS, and WE define the operation to be executed by the SDRAM. BA0~BA1 Input Selects which DDR2 SDRAM internal bank is activated. ODT0~ODT1 Input Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR2 SDRAM Extended Mode Register Set (EMRS). A0~A9, A10/AP, A11~A13 Input During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of CK and falling edge of CK. During a Read or Write command cycle, defines the column address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pecharged regardiess of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge. DQ0~DQ63 In/Out Data Input/Output pins. DM0~DM7 Input The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask by allowing input data to be written if it is low but blocks the write operation if it is high. In Read mode, DM lines have no effect. DQS0~DQS7 DQS0~DQS7 In/Out The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe is sourced by the controller and is centered in the data window. In Read mode, the data strobe is sourced by the DDR2 SDRAMs and is sent at the leading edge of the data window. DQS signals are complements, and timing is relative to the crosspoint of respective DQS and DQS If the module is to be operated in single ended strobe mode, all DQS signals must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately. VDD,VDD SPD,VSS Supply Power supplies for core, I/O, Serial Presence Detect, and ground for the module. SDA In/Out This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resistor must be connected to VDD to act as a pull up. SCL Input This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from SCL to VDD to act as a pull up. SA0~SA1 Input Address pins used to select the Serial Presence Detect base address. TEST In/Out The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules(SODIMMs). Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Functional Block Diagram: 512MB, 64Mx64 Module(Populated as 2 rank of x16 DDR2 SDRAMs) M470T6554CZ0 3Ω + 5% ODT1 ODT0 CKE1 CKE0 S1 S0 DQS0 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3 DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 LDQS CS C K LDQS E LDM I/O 0 I/O 1 D0 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T LDQS CS C K LDQS E LDM I/O 0 I/O 1 D1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T LDQS CS C K LDQS E LDM I/O 0 I/O 1 D4 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T LDQS CS C K LDQS E LDM I/O 0 I/O 1 D5 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T DQS4 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DQS5 DM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DQS6 DM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DQS7 DM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 LDQS CS C K LDQS E LDM I/O 0 I/O 1 D2 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T LDQS CS C K LDQS E LDM I/O 0 I/O 1 D6 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T LDQS CS C K LDQS E LDM I/O 0 I/O 1 D3 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T LDQS CS C K LDQS E LDM I/O 0 I/O 1 D7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 O D T 3Ω + 5% BA0 - BA1 DDR2 SDRAMs D0 - D7 A0 - A13 DDR2 SDRAMs D0 - D7 RAS DDR2 SDRAMs D0 - D7 CAS DDR2 SDRAMs D0 - D7 WE DDR2 SDRAMs D0 - D7 SCL SA0 SA1 SCL A0 SPD A1 A2 SDA WP * Clock Wiring VDDSPD Serial PD VREF DDR2 SDRAMs D0 - D7 VDD DDR2 SDRAMs D0 - D7, VDD and VDDQ VSS DDR2 SDRAMs D0 - D7, SPD Clock Input DDR2 SDRAMs *CK0/CK0 *CK1/CK1 4 DDR2 SDRAMs 4 DDR2 SDRAMs * Wire per Clock Loading Table/Wiring Diagrams Notes : 1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%. 2. BAx, Ax, RAS, CAS, WE resistors : 3.0 Ohms ± 5%. Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Functional Block Diagram: 256MB, 32Mx64 Module(Populated as 1 rank of x16 DDR2 SDRAMs) M470T3354CZ0 3Ω + 5% CKE0 ODT0 S0 DQS0 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3 DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 LDQS CS O D LDQS T LDM I/O 0 I/O 1 D0 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 C K E LDQS CS O D LDQS T LDM I/O 0 I/O 1 D1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 C K E 3Ω BA0 - BA1 DDR2 SDRAMs D0 - D3 A0 - A13 DDR2 SDRAMs D0 - D3 RAS DDR2 SDRAMs D0 - D3 CAS DDR2 SDRAMs D0 - D3 WE DDR2 SDRAMs D0 - D3 DQS4 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DQS5 DM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DQS6 DM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DQS7 DM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 SCL SA0 SA1 SCL A0 SPD A1 A2 LDQS CS O D LDQS T LDM I/O 0 I/O 1 D2 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 C K E LDQS CS O D LDQS T LDM I/O 0 I/O 1 D3 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 C K E SDA WP * Clock Wiring VDDSPD Serial PD Clock Input DDR2 SDRAMs VREF DDR2 SDRAMs D0 - D3 *CK0/CK0 *CK1/CK1 2 DDR2 SDRAMs 2 DDR2 SDRAMs VDD DDR2 SDRAMs D0 - D3, VDD and VDDQ VSS DDR2 SDRAMs D0 - D3, SPD * Wire per Clock Loading Table/Wiring Diagrams Notes : 1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%. 2. BAx, Ax, RAS, CAS, WE resistors : 3.0 Ohms ± 5%. Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Functional Block Diagram: 1GB, 128Mx64 Module(Populated as 2 ranks of x8 DDR2 SDRAMs) M470T2953CZ0 10Ω + 5% CKE1 ODT1 S1 CKE0 ODT0 S0 DQS0 DQS0 DM0 CS0 O D T 0 C K E 0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CS0 O DQS DQS D DM T 0 I/O 8 I/O 9 D1 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 C K E 0 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 C K E 0 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 CS0 O DQS D DQS DM T 0 I/O 8 I/O 9 D3 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS1 DQS1 DM1 DQS2 DQS2 DM2 DQS3 DQS3 DM3 D0 CS0 O D T 0 D2 C K E 0 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS1 O D T 1 D8 CS1 O DQS DQS D DM T 1 I/O 8 I/O 9 D9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 C K E 1 CS1 O D T 1 C K E 1 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS4 DQS4 DM4 C K E 1 CS0 O D T 0 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS DQS DM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 CS0 O D T 0 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS0 O D T 0 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQS DQS DM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 CS0 O D T 0 DQS5 DQS5 DM5 DQS6 DQS6 DM6 D10 CS1 O DQS D DQS DM T 1 I/O 8 I/O 9 D11 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS7 DQS7 DM7 C K E 1 C K E 0 D4 C K E 0 D5 C K E 0 D6 C K E 0 D7 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS1 O D T 1 DQS DQS DM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 CS1 O D T 1 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS1 O D T 1 DQS DQS DM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 CS1 O D T 1 C K E 1 D12 C K E 1 D13 C K E 1 D14 C K E 1 D15 * Clock Wiring 10Ω + 5% BA0 - BA1 DDR2 SDRAMs D0 - D15 A0 - A13 DDR2 SDRAMs D0 - D15 RAS DDR2 SDRAMs D0 - D15 CAS DDR2 SDRAMs D0 - D15 WE DDR2 SDRAMs D0 - D15 SCL SA0 SA1 VDDSPD Serial PD VREF DDR2 SDRAMs D0 - D15 VDD DDR2 SDRAMs D0 - D15, VDD and VDDQ VSS DDR2 SDRAMs D0 - D15, SPD SCL A0 SPD A1 A2 SDA Clock Input DDR2 SDRAMs *CK0/CK0 *CK1/CK1 8 DDR2 SDRAMs 8 DDR2 SDRAMs WP * Wire per Clock Loading Table/Wiring Diagrams Notes : 1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%. 2. BAx, Ax, RAS, CAS, WE resistors : 3.0 Ohms ± 5%. Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Absolute Maximum DC Ratings Symbol VDD VDDQ VDDL VIN, VOUT TSTG 1. Parameter Rating Units Notes Voltage on VDD pin relative to Vss - 1.0 V ~ 2.3 V V 1 Voltage on VDDQ pin relative to Vss - 0.5 V ~ 2.3 V V 1 Voltage on VDDL pin relative to Vss - 0.5 V ~ 2.3 V V 1 Voltage on any pin relative to Vss - 0.5 V ~ 2.3 V V 1 -55 to +100 °C 1, 2 Storage Temperature Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. AC & DC Operating Conditions Recommended DC Operating Conditions (SSTL - 1.8) Rating Symbol Parameter Units Min. Typ. Max. VDD Supply Voltage 1.7 1.8 1.9 V VDDL Supply Voltage for DLL 1.7 1.8 1.9 V VDDQ Supply Voltage for Output VREF VTT Notes 4 1.7 1.8 1.9 V 4 Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 1,2 Termination Voltage VREF-0.04 VREF VREF+0.04 V 3 There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD. 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC). 3. VTT of transmitting device must track VREF of receiving device. 4. AC parameters are measured with VDD, VDDQ and VDDDL tied together. Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Operating Temperature Condition Symbol Parameter Rating Units Notes TOPER Operating Temperature 0 to 95 °C 1, 2, 3 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard. 2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate. Input DC Logic Level Symbol Parameter Min. Max. Units VIH(DC) DC input logic high VREF + 0.125 VDDQ + 0.3 V VIL(DC) DC input logic low - 0.3 VREF - 0.125 V Notes Input AC Logic Level DDR2-400, DDR2-533 Symbol DDR2-667 Parameter Units Min. Max. Min. VREF + 0.200 VIH (ac) ac input logic high VREF + 0.250 - VIL (ac) ac input logic low - VREF - 0.250 Max. V VREF - 0.200 V AC Input Test Conditions Symbol Condition Value Units Notes VREF Input reference voltage 0.5 * VDDQ V 1 VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1 SLEW Input signal minimum slew rate 1.0 V/ns 2, 3 Notes: 1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for falling edges as shown in the below figure. 3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions. VDDQ VIH(AC) min VIH(DC) min VSWING(MAX) VREF VIL(DC) max VIL(AC) max delta TF Falling Slew = delta TR VREF - VIL(AC) max Rising Slew = delta TF VSS VIH(AC) min - VREF delta TR < AC Input Test Signal Waveform > Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Proposed Conditions IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is same as IDD4W mA Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare STABLE; Data bus inputs are FLOATING mA Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD1 IDD2P IDD2Q IDD2N IDD3P IDD3N IDD4W IDD4R IDD5B IDD6 IDD7 Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Units Fast PDN Exit MRS(12) = 0mA mA Slow PDN Exit MRS(12) = 1mA mA Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W Burst auto refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Self refresh current; CK and CK\ at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING Notes mA mA mA Normal mA Low Power mA Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the following page for detailed timing conditions mA Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Operating Current Table(1-1) (TA=0oC, VDD= 1.9V) M470T6554CZ0 : 64Mx64 512MB Module Symbol 667@CL=4 667@CL=5 CE6 LE6 533@CL=4 LD6 IDD0 tbd tbd 640 580 560 IDD1 tbd tbd 720 660 640 IDD2P tbd tbd 80 tbd CD5 LD5 400@CL=3 CD6 80 48 CCC LCC 80 tbd tbd 280 280 240 IDD2N tbd tbd 320 280 280 IDD3P-F tbd tbd IDD3P-S tbd tbd 280 tbd 240 96 200 240 96 mA mA mA mA 200 96 mA mA IDD3N tbd tbd 380 tbd 340 320 340 320 mA IDD4W tbd tbd 940 tbd 820 740 720 640 mA IDD4R tbd tbd 960 tbd 820 720 700 620 mA IDD5 tbd tbd IDD6 tbd tbd tbd 64 32 64 32 mA IDD7 tbd tbd 840 64 800 1,560 780 1,420 Notes mA 48 IDD2Q Unit mA 1,400 mA * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. M470T3354CZ0: 32Mx64 256MB Module Symbol 667@CL=4 667@CL=5 CE6 LE6 533@CL=4 LD6 IDD0 tbd tbd 480 440 420 IDD1 tbd tbd 560 520 500 IDD2P tbd tbd IDD2Q tbd tbd 140 140 120 IDD2N tbd tbd 160 140 140 IDD3P-F tbd tbd IDD3P-S tbd tbd 40 tbd 140 tbd CD5 LD5 400@CL=3 CD6 40 24 120 48 100 CCC LCC 40 48 mA mA mA mA 100 48 mA mA IDD3N tbd tbd 220 tbd 200 180 200 180 mA IDD4W tbd tbd 780 tbd 680 600 580 500 mA IDD4R tbd tbd 800 tbd 680 580 560 480 IDD5 tbd tbd IDD6 tbd tbd IDD7 tbd tbd 680 32 660 tbd 1,400 32 640 16 1,280 32 mA mA 16 1,260 Notes mA 24 120 Unit mA mA * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Operating Current Table(1-2) (TA=0oC, VDD= 1.9V) M470T2953CZ0: 128Mx64 1GB Module Symbol 667@CL=4 CD6 LD6 IDD0 tbd tbd IDD1 tbd tbd IDD2P tbd tbd 667@CL=5 CE6 533@CL=4 LE6 1,040 CCC LCC 960 960 960 880 mA 80 160 80 mA 1,040 tbd Unit LD5 1,120 160 400@CL=3 CD5 1,000 160 mA IDD2Q tbd tbd 560 560 480 mA IDD2N tbd tbd 640 560 560 mA IDD3P-F tbd tbd IDD3P-S tbd tbd 560 tbd 480 192 400 480 192 400 mA 192 mA IDD3N tbd tbd 760 tbd 680 640 680 640 IDD4W tbd tbd 1,560 tbd 1,320 1,240 1,200 1,160 mA IDD4R tbd tbd 1,560 tbd 1,320 1,160 1,200 1,160 mA IDD5 tbd tbd IDD6 tbd tbd tbd 128 64 128 64 mA IDD7 tbd tbd 1,640 128 1,560 2,160 mA 1,520 2,080 Notes mA 2,040 mA * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Input/Output Capacitance(VDD=1.8V, VDDQ=1.8V, TA=25oC) Parameter Symbol Non-ECC Min Max M470T6554CZ0 Min Max M470T3354CZ0 Min Max Units M470T2953CZ0 Input capacitance, CK and CK CCK - 32 - 24 - 48 Input capacitance, CKE , CS, Addr, RAS, CAS, WE CI - 34 - 34 - 42 Input/output capacitance, DQ, DM, DQS, DQS CIO(400/533) - 10 - 6 - 10 CIO(667) - 9 - 5.5 - 9 pF Note: DM is internally loaded to match DQ and DQS identically. Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Electrical Characteristics & AC Timing for DDR2-667/533/400 (0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) Refresh Parameters by Device Density Parameter Symbol Refresh to active/Refresh command time tRFC Average periodic refresh interval tREFI 256Mb 512Mb 1Gb 2Gb 4Gb Units 75 105 127.5 195 327.5 ns 0 °C ≤ TCASE ≤ 85°C 7.8 7.8 7.8 7.8 7.8 µs 85 °C < TCASE ≤ 95°C 3.9 3.9 3.9 3.9 3.9 µs Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin Speed DDR2-667(D6) DDR2-667(E6) DDR2-533(D5) DDR2-400(CC) Bin(CL - tRCD - tRP) 4-4-4 5-5-5 4-4-4 3-3-3 Units Parameter min max min max min max min max tCK, CL=3 5 8 5 8 5 8 5 8 ns tCK, CL=4 3 8 3.75 8 3.75 8 5 8 ns tCK, CL=5 3 8 3 8 3.75 8 - - ns tRCD 12 15 15 15 ns tRP 12 15 15 15 ns tRC 51 54 55 55 ns tRAS 39 70000 70000 39 70000 40 70000 40 ns Timing Parameters by Speed Grade (Refer to notes for informations related to this table at the bottom) Parameter Symbol DDR2-667 DDR2-533 DDR2-400 min max min max min max Units DQ output access time from CK/CK tAC -450 +450 -500 +500 -600 +600 ps DQS output access time from CK/CK tDQSCK -400 +400 -450 +450 -500 +500 ps CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK half period tHP min(tCL , tCH) x min(tCL , tCH) x min(tCL , tCH) x ps Clock cycle time, CL=x tCK 3000 8000 3750 8000 5000 8000 ps DQ and DM input hold time tDH(base) 175 x 225 x 275 x ps Notes Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs Parameter Symbol DDR2-667 DDR2-533 DDR2 SDRAM DDR2-400 min max min max min max Units DQ and DM input setup time tDS(base) 100 x 100 x 150 x ps Control & Address input pulse width for each input tIPW 0.6 x 0.6 x 0.6 x tCK DQ and DM input pulse width for each input tDIPW 0.35 x 0.35 x 0.35 x tCK Data-out highimpedance time from CK/CK tHZ x tAC max x tAC max x tAC max ps DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max tAC min tAC max ps DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2* tAC min tAC max 2* tAC min tAC max ps DQS-DQ skew for DQS and associated DQ signals tDQSQ x 240 x 300 x 350 ps DQ hold skew factor tQHS x 340 x 400 x 450 ps DQ/DQS output hold time from DQS tQH tHP tQHS x tHP tQHS x tHP tQHS x ps Write command to first DQS latching transition tDQSS -0.25 0.25 -0.25 0.25 -0.25 0.25 tCK DQS input high pulse width tDQSH 0.35 x 0.35 x 0.35 x tCK DQS input low pulse width tDQSL 0.35 x 0.35 x 0.35 x tCK DQS falling edge to CK setup time tDSS 0.2 x 0.2 x 0.2 x tCK DQS falling edge hold time from CK tDSH 0.2 x 0.2 x 0.2 x tCK Mode register set command cycle time tMRD 2 x 2 x 2 x tCK Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK Write preamble tWPRE 0.35 x 0.35 x 0.35 x tCK Address and control input hold time tIH(base) 275 x 375 x 475 x ps Address and control input setup time tIS(base) 200 x 250 x 350 x ps Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK Active to active command period for 1KB page size products tRRD 7.5 x 7.5 x 7.5 x ns Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs Parameter Symbol DDR2-667 DDR2-533 DDR2 SDRAM DDR2-400 min max min max min max x 10 x 10 x Units Active to active command period for 2KB page size products tRRD 10 ns Four Activate Window for 1KB page size products tFAW 37.5 37.5 37.5 ns Four Activate Window for 2KB page size products tFAW 50 50 50 ns CAS to CAS command delay tCCD 2 2 2 tCK Write recovery time tWR 15 x 15 x 15 x ns Auto precharge write recovery + precharge time tDAL WR+tR P x WR+tR P x WR+tR P x tCK Internal write to read command delay tWTR 7.5 x 7.5 x 10 x ns Internal read to precharge command delay tRTP 7.5 7.5 7.5 ns Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 tRFC + 10 ns Exit self refresh to a read command tXSRD 200 200 200 tCK Exit precharge power down to any non-read command tXP 2 x 2 x 2 x tCK Exit active power down to read command tXARD 2 x 2 x 2 x tCK Exit active power down to read command (slow exit, lower power) tXARDS CKE minimum pulse width (high and low pulse width) 7 - AL 6 - AL 6 - AL tCK t CKE 3 3 3 ODT turn-on delay tAOND 2 2 2 2 2 2 tCK ODT turn-on tAON tAC(mi n) tAC(m ax)+0. 7 tAC(mi n) tAC(m ax)+1 tAC(mi n) tAC(ma x)+1 ns ODT turn-on(PowerDown mode) tAONPD tAC(mi n)+2 2tCK+t AC(ma x)+1 tAC(mi n)+2 2tCK+t AC(ma x)+1 tAC(mi n)+2 2tCK+t AC (max)+ 1 ns ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 2.5 2.5 tCK ODT turn-off tAOF tAC(mi n) tAC(m ax)+ 0.6 tAC(min) tAC(ma x)+ 0.6 tAC(mi n) tAC(max )+ 0.6 ns tCK Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs Parameter Symbol DDR2-667 DDR2-533 DDR2 SDRAM DDR2-400 min max min max min max tAC(mi n)+2 2.5tCK +tAC( max)+ 1 tAC(mi n)+2 2.5tCK + tAC(m ax)+1 tAC(mi n)+2 2.5tCK + tAC(ma x)+1 Units ns ODT turn-off (PowerDown mode) tAOFPD ODT to power down entry latency tANPD 3 3 3 tCK ODT power down exit latency tAXPD 8 8 8 tCK OCD drive mode output delay tOIT 0 Minimum time clocks remains ON after CKE asynchronously drops LOW tDelay tIS+tCK +tIH 12 0 tIS+tCK +tIH 12 0 tIS+tCK +tIH 12 ns ns Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Physical Dimensions: 32Mbx16 based 64Mx64 Module(2 Rank) M470T6554CZ0 67.60 mm 3.8 mm Max a 1 b 11.40 30.00 20.00 6.00 4.00 ± 0.10 2.00 199 1.1 mm Max 47.40 16.25 63.00 2 200 30.00 SPD a 67.60 mm DETAIL a BACK SIDE FRONT SIDE 4.00 ± 0.10 1.0 ± 0.05 1.0 ± 0.05 2.55 1.50 ± 0.10 1.80 ± 0.10 4.00 ± 0.10 0.20 ± 0.15 4.20 2.70 ± 0.10 DETAIL b 2.40 ± 0.10 4.20 0.60 0.45 ± 0.03 The used device is 32M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51163QC Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Physical Dimensions: 32Mbx16 based 32Mx64 Module(1 Rank) M470T3354CZ0 67.60 mm a 1 b 11.40 2.45 mm Max 30.00 20.00 6.00 SPD 4.00 ± 0.10 2.00 199 47.40 1.1 mm Max 16.25 63.00 2 200 30.00 a 67.60 mm DETAIL a BACK SIDE FRONT SIDE 4.00 ± 0.10 1.0 ± 0.05 1.0 ± 0.05 2.55 1.50 ± 0.10 1.80 ± 0.10 4.00 ± 0.10 0.20 ± 0.15 4.20 2.70 ± 0.10 DETAIL b 2.40 ± 0.10 4.20 0.60 0.45 ± 0.03 The used device is 32M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51163QC Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Physical Dimensions: 64Mbx8 based 128Mx64 Module(2 Ranks) M470T2953CZ0 67.60 mm 3.8 mm max 2.00 a 1 b 11.40 30.00 20.00 6.00 4.00 ± 0.10 SPD 199 47.40 16.25 1.1mm max 63.00 2 200 30.00 a 67.60 mm DETAIL a BACK SIDE FRONT SIDE 4.00 ± 0.10 1.0 ± 0.05 1.0 ± 0.05 2.55 1.50 ± 0.10 1.80 ± 0.10 4.00 ± 0.10 0.20 ± 0.15 4.20 2.70 ± 0.10 DETAIL b 2.40 ± 0.10 4.20 0.60 0.45 ± 0.03 The used device is 64M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51083QC Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Revision History Revision 1.0 (Mar. 2005) - Initial Release Revision 1.1 (Mar. 2005) - Changed IDD0/IDD3N/IDD3P current values. - Added Lowpower current values. Rev. 1.1 Mar. 2005