THREE PHASE DIODE＋THYRISTOR DFA200AA80/160 SanRex Power Module, DFA200AA, is complex isolated module which is designed for rash current circuit. １０８ ９３±０． ３ ２２ ２２ １５． １３． ５ ２０ ５ M４ ８ depth １０mm １２ configuration, and a thyristor connected to a direct current line. Module is designed very compactly. Because G diode module and thyristor put together. ● This Module is also isolated type between electorode R2 G terminal and mounting base. So you can put this ６-M６ depth １０mm ＋ − ＋ R T S ２２ T ２２ Module and other one together in a same fin. ２１ ２８． ５ ７ ２７±０． ３ ４ ∼ （Application） ● Inverter for AC or DC motor control, Current stabilized ４-φ５.８ − S R ２８ ＋ R２ ２４． ５ ● This R２ １８ ２３ ４８． ０±０． ３ ６２ It contains six diodes connected in a three phase bridge ∼ ∼ power supply, Switching power supply. Unit：㎜ − ●DIODE ■Mximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Item Ratings DFA200AA80 DFA200AA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V Symbol Item Conditions ID Output Current (D.C.) Three phase full wave, Tc＝96℃ IFSM Surge forward current １cycle, 50/60HZ, peak value, non-repetitive Ratings Unit 200 A 1850/2000 kA Operating Junction Temperature −30 to ＋150 ℃ Tstg Storage Temperature −30 to ＋135 ℃ VISO Isolation Breakdown Voltage (R.M.S.) 2500 V Tj Mounting Torque A.C. 1minute Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminal（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M4） Recommended Value 1.0-1.4（10-14） 1.5（15） Mass Typical Value N･m （㎏f･B） 460 g Ratings Unit ■Electrical Characteristics Symbol Item IRRM Repetitive Peak Reverse Current,max. Tj＝150℃, VR=VRRM 20 mA VFM Forward Voltage Drop,max. IF＝200A Inst. measurement 1.35 V Junction to Case（TOTAL） 0.10 ℃/W Rth（j-c） Thermal Impedance, max. SanRex Conditions ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DFA200AA80/160 ●THYRISTOR ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Ratings Item DFA200AA80 DFA200AA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V VDRM Repetitive Peak Off-State Voltage 800 1600 V Symbol Item IT（AV） Conditions Ratings Average On-State Current Singl phase half wave. 180°conduction, Tc＝93℃ Surge On-State Current 1 ／2cycle, I2t (for fusing) Value for one of surge current di／dt Critical Rate of Rise of On-State Current IG＝100mA， VD＝1／2VDRM， di G /dt＝0.1A/μs VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute Tj Operating Junction Temperature Tj＝125℃∼135℃ ITSM I2t Tstg 50/60HZ, peak value, non-repetitive 200 A A2S 200 A/μs 2500 V −30 to ＋135 ℃ −30 to ＋135 ℃ Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminal（M6） Recommended Value 2.5-3.9（15-25） 4.7（48） Terminal（M4） Recommended Value 1.0-1.4（15-25） 1.5（15） Mass A 1850/2000 17000 Storage Temperature Mounting Torque Unit Typical Value N･m （㎏f･B） 460 g ■Electrical Characteristics Symbol Item IDRM Repetitive Peak off-State Current,max. Tj＝135℃，VD＝VDRM IRRM Repetitive Peak Reverse Current,max. Tj＝135℃，VD＝VDRM VTM Peak on-State Voltagea,max. IT＝200A Inst. measurement IGT Gate Trigger Current,max. VD＝6V，IT＝1A 100 mA VGT Gate Trigger Voltage,max. VD＝6V，IT＝1A 3 Critical Rate of off-State Voltaget,min. Tj＝125℃，VD＝2／3VDRM 500 V/μs Junction to Case 0.18 ℃/W dv／dt Conditions Rth（j-c） Thermal Impedance, max. DIODE Maximum Forward Characteristics ２ １０２ ５ ２ １ １０ ５ Ｔ ｊ=２５℃ Ｔ ｊ=１５０℃ ２ １００ ０． ６ ０． ８ １． ０ １． ２ １． ４ １． ６ Forward Voltage Drop V（V） F １． ８ ２． ０ ８００ Power Dissipation Pav（W） Forward Current I（A） F ５ Ratings Unit 50 mA 50 mA 1.15 V V Output Current vs. Power Dissipation SCR＋DIODE （Single Phase） ７００ SCR＋DIODE （Three Phase） DIODE （Single Phase） DIODE （Three Phase） ６００ ５００ ４００ ３００ SCR ２００ １００ ０ ０ ５０ １００ １５０ ２００ ２５０ Output Current ID（A） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ２００ Output Current vs. Allowable case Temperature ２５００ DIODE Surge Forward Current Rating （Non-Repetitive） Per one element Tj＝25℃ start ２０００ １５０ Diode １５００ Three Phase SCR １００ １０００ ６０HZ ５０ ５００ ０ ０ ５０ １００ １５０ ２００ ００ １０ ２５０ ２ Transient Thermal Impedance θj-c（℃/W） ２ １０２ ５ Gate Characteristics Peak Forward Gate Voltage（10V） Gate Voltage（V） １０１ ０.１ ０.０５ ２ Time（Cycles） DIODE Transient Thermal Impedance ０.１５ １０１ ５ Output Current ID（A） Junction to Case Av ５ er ag Pe ak Ga te eG ate Po ２ we （ r３ W Po we （ r１ ０W ） 0 １０ −１０℃ ５ ） Peak Gate Current（３A） Allowable Case Temperature Tc（℃） DFA200AA80/160 ２５℃ １３５℃ Maximum Gate Non-Trigger Voltage On-State Peak Current I（A） T ５ −１ １０ ２ ５ ０ １０ ２ Time t（sec） ５ １ １０ ２ ５ SCR On-State Characteristics ２５００ ５ １０ ２ ５ １０３ ２ ５ Surge On-State Current Rating （Non-Repetitive） Per one element Tj＝25℃ start ２０００ １０３ ５ １５００ ２ １０００ １０２ ５ Ｔ ｊ=２５℃ Ｔ ｊ=１３５℃ ２ １０１ ０． ５ 1． ０ ２． ０ ３． ０ ６０HZ ５００ ００ １０ ２ ５ １０１ ２ ５ １０２ Time（Cycles） On-State Voltage（V） Transient Thermal Impedance θj-c（℃/W） ２ ２ Gate Current（mA） ２ ０.２ ２ １０１ Surge Forward Current IFSM（A） ０ ５ SCR Transient Thermal Impedance ０.１ Junction to Case ０ −３ １０ ２ ５ １０−２ ２ ５ １０−１ ２ Time t（sec） ５ １００ ２ ５ １０１ SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]