MITSUBISHI THYRISTOR MODULES TM15T3A-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM15T3A-M,-H • IO • VRRM • • • • DC output current ...................... 30A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V 3 Phase Mix Bridge Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM 31 Dimensions in mm 27 KT GT KS GS KR GR R 45 KS GR KT GS P GT R P S N N 20 S T T 61.7 4–φ5.5 74 86 5–M5 7 Tab#110, t=0.5 6 LABEL 22 31 62 20 KR Feb.1999 MITSUBISHI THYRISTOR MODULES TM15T3A-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol M H Unit VRRM Repetitive peak reverse voltage 400 800 V VRSM Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V Ratings Unit IO DC output current Parameter 3-phase fullwave rectified, TC=104°C 30 A ITSM, IFSM Surge (non-repetitive) current One half cycle at 60Hz, peak value 300 A I2t I2t for fusing Value for one cycle of surge current 3.8 × 102 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=0.5A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~125 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Symbol Conditions Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M5 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.47~1..96 N·m 15~20 kg·cm 310 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 4.0 mA IDRM Repetitive peak of off-state Tj=125°C, VDRM applied — — 4.0 mA VTM, VFM current Tj=125°C, ITM=IFM=75A, instantaneous meas. — — 1.5 V dv/dt Forward voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Critical rate of rise of off-state voltage Tj=25°C, VD=6V, RL=2Ω — — 2.0 V VGD Gate trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate non-trigger voltage Tj=25°C, VD=6V, RL=2Ω 10 — 50 mA Rth (j-c) Gate trigger current Junction to case (per 1/6 module) — — 1.8 °C/ W Rth (c-f) Thermal resistance Case to fin, Conductive grease applied (per 1/6 module) — — 0.36 °C/ W Contact thermal resistance Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM15T3A-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) — — — Tj Tstg dv/dt VGT VGD IGT — — — — I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM — — — — — Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM VTM IDRM VFM Rth (j-c) Rth (c-f) Thyristor — Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 500 Tj=125°C SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 RATED SURGE (NON-REPETITIVE) CURRENT 1.0 1.5 2.0 FORWARD VOLTAGE (V) 2.5 400 300 200 100 0 1 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) Feb.1999 MITSUBISHI THYRISTOR MODULES TM15T3A-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) 10 0 2 3 5 710 1 2.5 (W) 80 2.0 POWER DISSIPATION TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) (PER SINGLE ELEMENT) 1.5 1.0 70 120° 90° 60 60° 50 θ=30° 40 RESISTIVE, INDUCTIVE LOAD 30 20 θ 360° 0.5 10 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) 0 0 5 10 15 20 25 30 DC OUTPUT CURRENT 35 40 (A) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) CASE TEMPERATURE (°C) 130 θ 360° 120 RESISTIVE, INDUCTIVE LOAD 110 θ=30° 100 90 0 5 10 15 60° 90° 20 25 120° 30 DC OUTPUT CURRENT 35 40 (A) Feb.1999