FKN08PN40S TRIAC (Silicon Bidirectional Thyristor) Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 3 2 1: T1 2: Gate 3: T2 1 TO-92 1 2 3 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Rating Units 400 V 0.8 A 8 A 0.26 A 2s 5 W 0.1 W Peak Gate Voltage 5 V IGM Peak Gate Current 1 A TJ Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 125 °C Value Units 45 °C/W 160 °C/W VDRM VRRM Peak Repetitive Off-State Voltage IT (RMS) RMS On-State Current Commercial frequency, sine full wave 360° conduction, Tc= 70℃ ITSM Surge On-State Current Sinewave half cycle, peak value, non-repetitive I2 t I2t for Fusing Value corresponding to halfwave, surge on-state current, tp=8.33ms PGM Peak Gate Power Dissipation PG (AV) Average Gate Power Dissipation VGM Sine Wave 50 to 60Hz, Gate Open 60Hz Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case (note1) Thermal Resistance, Junction to Ambient (note2) Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad) © 2007 Fairchild Semiconductor Corporation FKN08PN40S Rev. 1.0.0 www.fairchildsemi.com 1 FKN08PN40S — TRIAC (Silicon Bidirectional Thyristor) February 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units IDRM IRRM Repetieive Peak Off-State Current VDRM/VRRM applied - - 100 μA VTM On-State Voltage TC=25°C, ITM=1.12A Instantaneous measurement - - 1.8 V T2(+), Gate (+) - - 2.0 V VGT Gate Trigger Voltage (Note 2) T2(+), Gate (-) - - 2.0 V III T2(-), Gate (-) - - 2.0 V I T2(+), Gate (+) - - 5 mA T2(+), Gate (-) - - 5 mA T2(-), Gate (-) - - 5 mA TJ=125°C, VD=1/2VDRM 0.2 - - V VD = 12V, ITM = 200mA - - 15 mA VD = 12V, IG = 10mA - - 15 mA - - 20 mA 20 - - V/μs 3.0 - - V/μs I II Gate Trigger Current (Note 2) IGT II VD=12V, RL=100Ω VD=12V, RL=100Ω III VGD Gate Non-Trigger Voltage IH Holding Current IL Latching Current (I, II,III) I, III II dv/dt(s) Critical Rate of Rise of Off-State Voltag VDRM = 63% Rated, Tj = 125°C, Exponential Rise dv/dt(c) Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/uS) Commutation dv/dt test VDRM (V) FKN08PN40S Commutating voltage and current waveforms (inductive load) Test Condition 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 200V Supply Voltage (di/dt)C Main Current Time Time Main Voltage (dv/dt)C © 2007 Fairchild Semiconductor Corporation FKN08PN40S Rev. 1.0.0 Time VD www.fairchildsemi.com 2 FKN08PN40S — TRIAC (Silicon Bidirectional Thyristor) Electrical Characteristics FKN08PN40S — TRIAC (Silicon Bidirectional Thyristor) Quadrant Definitions for a Triac T2 Positive + (+) T2 Quadrant II (+) T2 (-) IGT GATE Quadrant I (+) IGT GATE T1 T1 IGT - + IGT (-) T2 Quadrant III (-) T2 (-) IGT GATE (+) IGT GATE T1 Quadrant IV T1 T2 Negative Package Marking and Ordering Information Device Marking Device Package Packing Tape Width Quantity K08PN40S FKN08PN40S TO-92 BULK -- -- © 2007 Fairchild Semiconductor Corporation FKN08PN40S Rev. 1.0.0 www.fairchildsemi.com 3 Figure 2. Power Dissipation o TJ=125 C PAV[W], Maximum Average Power Dissipation ITM[A], On-State Current Figure 1. On-State Characteristics o TJ=25 C 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 1.2 1.0 0.8 DC o 180 0.6 120 90 0.2 30 0.0 0.0 0.2 IGT[mA], Gate Trigger Current 90 o o 180 o DC 90 80 70 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 Q3 4 Q2 3 Q1 2 1 0 -40 0.8 ITRMS[A], On-State Current 0 40 80 120 o T J[ C], Junction Temperature Figure5. Typical Gate Voltage vs Junction Temperarure Figure6. Typical Latching Currrent vs Junction Temperature 1.0 6 0.9 IL[mA], Latching Current VGT[mA], Gate Trigger Voltage 0.6 o 110 120 0.4 6 o 60 100 60 Figure 4. Typical Gate Trigger Current vs Junction Temperature o Maximum Allowable Case Temperature, TC[ C] Figure 3. RMS Current Rating 30 o o o ITRMS[A], On-State Current VTM[V], On-State Voltage 120 o 0.4 0.8 0.7 Q3 Q1 0.6 Q2 0.5 0.4 -40 0 40 80 Q3 2 Q1 0 -40 120 0 40 80 120 o o T J [ C ], Junction Tem perature T J[ C], Junction Temperature © 2007 Fairchild Semiconductor Corporation FKN08PN40S Rev. 1.0.0 4 www.fairchildsemi.com 4 FKN08PN40S — TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics Figure7. Typical Holding Current vs Junction Temperature Figure8. Junction to Case Thermal Resistance Junction to Case Thermal Resistance, [ C/W] 5 o Q3 IH[mA],Holding Current 4 3 Q1 2 Q2 1 0 -40 0 40 80 120 o 40 30 20 10 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Time, [S] TJ[ C], Junction Temperature © 2007 Fairchild Semiconductor Corporation FKN08PN40S Rev. 1.0.0 50 www.fairchildsemi.com 5 FKN08PN40S — TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics (Continued) FKN08PN40S — TRIAC (Silicon Bidirectional Thyristor) Package Dimension TO-92 +0.25 4.58 ±0.20 4.58 –0.15 14.47 ±0.40 0.46 ±0.10 +0.10 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 0.38 –0.05 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 ±0.20 (R2.29) © 2007 Fairchild Semiconductor Corporation FKN08PN40S Rev. 1.0.0 www.fairchildsemi.com 6 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation FKN08PN40S Rev. 1.0.0 www.fairchildsemi.com 7 FKN08PN40S TRIAC (Silicon Bidirectional Thyristor) TRADEMARKS