FFP04H60S tm Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, trr < 45ns @ IF = 4A The FFP04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power supplies and other power swithching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Low Forward Voltage, VF < 2.1V @ 4A • RoHS compliant Applications • General Purpose • Switching Mode Power Supply • Free-wheeling diode for motor application • Power switching circuits TO-220-2L 1. Cathode 1. Cathode 2. Anode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted* Symbol VRRM Peak Repetitive Reverse Voltage Parameter Ratings 600 Units V VRWM VR Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 IF(AV) Average Rectified Forward Current V 4 IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave A 40 A TJ, TSTG Operating Junction and Storage Temperature @ TC = 135oC o -65 to +150 C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC Parameter Ratings Maximum Thermal Resistance, Junction to Case Units o 2.55 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F04H60S FFP04H60STU TO-220-2L - - 50 ©2007 Fairchild Semiconductor Corporation FFP04H60S Rev. A 1 www.fairchildsemi.com FFP04H60S November 2007 Symbol Min. Typ. Max. Units VFM1 IF = 4A IF = 4A Parameter TC = 25oC TC = 125oC - - 2.1 1.7 V IRM1 VR = 600V VR = 600V TC = 25oC TC = 125oC - - 100 200 µA trr (IF = 1A, di/dt = 100A/µs, VR = 30V) (IF = 4A, di/dt = 100A/µs, VCC = 390V) TC = 25oC - 21 33 35 45 ns Irr Qrr (IF = 4A, di/dt = 100A/µs, VR = 390V) TC = 25oC - 1.9 31 - A nC WAVL Avalanche Energy ( L = 40mH) 4 - - mJ Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFP04H60S Rev. A 2 www.fairchildsemi.com FFP04H60S Electrical Characteristics TC = 25oC unless otherwise noted FFP04H60S Typical Performance Characteristics Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 10000 40 o TC = 125 C o TC = 75 C o TC = 25 C 1 0.1 0 1 2 3 Forward Voltage, VF [V] 10 o Reverse Recovery Time, trr [ns] 40 30 20 10 1 10 Reverse Voltage, VR [V] 100 200 300 400 Reverse Voltage, VR [V] 80 500 600 o TC = 125 C 60 o TC = 75 C 40 o TC = 25 C 20 100 100 200 300 400 di/dt [A/µs] 500 600 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 25 Average Forward Current, IF(AV) [A] 10 Reverse Recovery Current, Irr [A] 10 IF = 4A 50 8 o TC = 125 C 6 4 o TC = 75 C o TC = 25 C 2 FFP04H60S Rev. A TC = 25 C 1 100 Typical Capacitance at 0V = 48 pF 0 100 o TC = 75 C Figure 4. Typical Reverse Recovery Time vs. di/dt 60 Capacitances , Cj [pF] 100 0.1 4 Figure 3.Typical Junction Capacitance 0 0.1 TC = 125 C 1000 o Reverse Current , IR [nA] Forward Current, IF [A] 10 IF = 4A 200 300 400 di/dt [A/µs] 500 20 15 10 5 0 25 600 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFP04H60S Mechanical Dimensions TO-220-2L Dimensions in Millimeters FFP04H60S Rev. A 4 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * ™ PDP-SPM™ SyncFET™ ® Power220® ® Power247 The Power Franchise® POWEREDGE® Power-SPM™ PowerTrench® TinyBoost™ Programmable Active Droop™ TinyBuck™ ® QFET TinyLogic® QS™ TINYOPTO™ QT Optoelectronics™ TinyPower™ ® Quiet Series™ TinyPWM™ RapidConfigure™ TinyWire™ Fairchild® SMART START™ Fairchild Semiconductor® μSerDes™ ® SPM FACT Quiet Series™ UHC® STEALTH™ FACT® Ultra FRFET™ SuperFET™ FAST® UniFET™ SuperSOT™-3 FastvCore™ VCX™ ® ®* SuperSOT™-6 FlashWriter SuperSOT™-8 * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I32 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com