Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6 0.9 1 2 0.65 2.0 0.2 0.425 [FH203] 1.25 2.1 · Composite type with a buffer transistor (2SC5245) and a oscillator transistors (2SC5415) contained in the currently provided MCP package as a VCO oscillator, improving the mounting efficiency greatly. · The FH203 is formed with two chips, being equivalent to the 2SC5245 and 2SC5415, placed in one package. · Optimal for use in UHF band oscillator circuit. 0.2 0.425 Features Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Tr1 [2SC5245] Collector-to-Base Voltage VCBO VCEO 20 V 10 V VEBO IC 1.5 V 30 mA PC 150 mW Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO VEBO 10 V Collector Current IC 100 mA Collector Dissipation PC 150 mW Total Dissipation PT 200 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Tr2 [2SC5415] Emitter-to-Base Voltage 2 V [Common specifications] Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0199TS (KOTO) TA-1709 No.6179–1/9 FH203 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ Unit max Tr1 [2SC5245] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=10V, IE=0 VEB=1V, IC=0 DC Current Gain Gain-Bandwidth Product hFE fT VCE=5V, IC=10mA VCE=5V, IC=10mA Output Capacitance Cob VCB=10V, f=1MHz Forward Transfer Gain 90 NF VCE=5V, IC=5mA, f=1.5GHz Noise Figure µA 11 0.45 VCE=5V, IC=10mA, f=1.5GHz µA 10 200 8 | S21e |2 1.0 8 GHz 0.7 pF 10 1.4 dB 3.0 dB Tr2 [2SC5415] Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 µA Emitter Cutoff Current IEBO 10 µA DC Current Gain Gain-Bandwidth Product hFE fT VEB=1V, IC=0 VCE=5V, IC=30mA Output Capacitance Cob Forward Transfer Gain 90 VCE=5V, IC=30mA VCB=10V, f=1MHz 6 7.5 0.9 | S21e |2 VCE=5V, IC=30mA, f=1GHz NF VCE=5V, IC=7mA, f=1GHz Noise Figure 200 10 GHz 1.4 pF 12 1.1 dB 2.0 dB Marking : 203 Electrical Connection E2 B1 B2 Tr1 Tr2 C1 E1 C2 hFE -- IC 5 2 DC Current Gain, hFE 3 Gain-Bandwidth Product, fT – GHz 3 100 7 5 3 2 10 7 5 0.1 fT -- IC [Tr1] VCE=5V [Tr1] 2 =5V VCE 10 1V 7 5 3 2 1.0 7 2 3 5 7 1.0 2 3 5 7 10 2 3 7 100 IT00478 Collector Current, IC – mA Cob -- VCB 5 5 0.1 5 [Tr1] 2 3 5 7 1.0 2 3 5 7 10 5 [Tr1] Reverse Transfer Capacitance, Cre – pF f=1MHz 3 Output Capacitance, Cob – pF 3 IT00479 Cre -- VCB 5 f=1MHz 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 Collector Current, IC – mA 3 2 1.0 7 5 3 2 0.1 7 5 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 5 IT00480 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 5 IT00481 No.6179–2/9 FH203 S21e2 -- IC f=1.5GHz 2 6 4 2 10 8 6 4 2 0 0 3 5 7 1.0 2 3 5 7 2 10 3 5 7 100 IT00482 Collector Current, IC – mA NF -- IC 12 3 5 7 1.0 2 3 5 7 2 10 3 5 7 100 IT00483 Collector Current, IC – mA [Tr1] f=1.5GHz NF -- IC 12 [Tr1] VCE=2V f=1GHz 10 Noise Figure, NF – dB 10 8 4 5V 1V 6 V CE = Noise Figure, NF – dB 12 1V V =5 E VC 8 14 2V Forward Transfer Gain, S21e – dB 12 [Tr1] f=1GHz =5V V CE 2 16 14 10 S21e2 -- IC [Tr1] 2V 1V Forward Transfer Gain, S21e – dB 16 8 6 4 2 2 0 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – mA 2 3 IT00484 PC -- Ta 220 5 0 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – mA 2 3 5 IT00485 [Tr1] Collector Dissipation, PC – mW 200 180 160 150 140 To t al 120 1u di ss ip nit 100 ati on 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT00486 No.6179–3/9 FH203 S Parameters (Common emitter) [Tr1] VCE=5V, IC=5mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 200 0.763 –37.5 11.926 146.9 0.036 70.7 0.892 –19.1 400 0.590 –65.4 9.202 124.3 0.058 60.9 0.740 –29.1 600 0.456 –85.5 7.173 109.4 0.073 57.4 0.631 –33.7 800 0.374 –102.0 5.743 98.7 0.086 56.7 0.566 –35.8 1000 0.323 –115.0 4.785 90.5 0.098 56.7 0.528 –37.2 1200 0.288 –127.5 4.105 83.6 0.110 57.2 0.505 –38.4 1400 0.264 –137.7 3.599 77.5 0.123 57.7 0.488 –39.6 1600 0.248 –147.4 3.213 71.3 0.136 57.6 0.476 –41.2 1800 0.239 –156.9 2.905 66.4 0.150 57.6 0.466 –43.3 2000 0.235 –165.7 2.651 61.3 0.165 57.2 0.462 –45.4 ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 VCE=5V, IC=10mA, ZO=50Ω Freq (MHz) | S11 | 200 0.605 –52.6 16.354 136.2 0.031 67.5 0.804 –23.9 400 0.417 –84.6 11.011 113.3 0.048 62.4 0.622 –30.5 600 0.319 –106.3 8.026 100.5 0.062 62.2 0.533 –32.0 800 0.266 –124.6 6.250 91.3 0.076 63.4 0.491 –32.4 1000 0.238 –136.5 5.115 84.7 0.090 64.3 0.469 –33.2 1200 0.225 –148.9 4.336 78.8 0.104 64.4 0.458 –34.6 1400 0.215 –158.3 3.813 73.4 0.119 64.5 0.449 –35.8 1600 0.213 –167.3 3.365 68.1 0.135 63.8 0.443 –37.7 1800 0.212 –175.6 3.030 63.5 0.150 63.1 0.436 –39.6 2000 0.216 –177.5 2.754 58.9 0.166 62.5 0.438 –41.9 ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 VCE=2V, IC=3mA, ZO=50Ω Freq (MHz) | S11 | 200 0.842 –30.7 8.491 153.0 0.044 72.5 0.931 –17.1 400 0.704 –56.3 7.161 131.9 0.075 60.9 0.808 –28.8 600 0.579 –76.1 5.879 116.3 0.095 54.1 0.696 –36.2 800 0.480 –93.1 4.882 104.2 0.109 51.0 0.615 –40.6 1000 0.417 –106.3 4.154 95.0 0.121 49.3 0.564 –43.5 1200 0.376 –119.6 3.597 87.1 0.132 48.7 0.526 –45.8 1400 0.343 –130.2 3.212 80.2 0.143 48.6 0.469 –47.5 1600 0.319 –140.5 2.875 73.4 0.154 48.7 0.475 –49.6 1800 0.303 –150.0 2.604 67.7 0.166 48.6 0.461 –51.6 2000 0.298 –160.0 2.383 62.1 0.179 48.9 0.451 –52.9 VCE=1V, IC=1mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 200 0.945 –18.9 3.296 162.5 0.054 77.2 0.980 –11.0 400 0.884 –37.3 3.206 145.9 0.102 65.9 0.934 –20.5 600 0.810 –53.6 2.942 131.2 0.139 56.3 0.870 –29.0 800 0.728 –69.4 2.711 117.8 0.166 48.6 0.811 –35.5 1000 0.667 –82.5 2.449 107.0 0.187 42.5 0.763 –40.9 1200 0.605 –95.8 2.252 96.9 0.199 37.3 0.715 –45.7 1400 0.561 –106.1 2.061 88.1 0.207 33.5 0.673 –49.4 1600 0.518 –117.2 1.909 79.5 0.212 30.6 0.638 –53.4 1800 0.492 –127.5 1.766 72.2 0.215 28.6 0.611 –56.5 2000 0.465 –137.9 1.658 65.2 0.217 27.6 0.592 –59.9 No.6179–4/9 FH203 IC -- VCE 50 100 0.35mA Collector Current, IC – mA Collector Current, IC – mA 0.25mA 0.20mA 30 0.15mA 20 0.10mA 10 0.05mA IB=0 0 2 4 6 8 hFE -- IC [Tr2] 2 VCE=5V 2V 7 5 3 2 3 5 7 10 2 3 5 7 100 Collector Current, IC – mA 2 3 [Tr2] 3 2 1.0 7 5 3 2 3 Collector-to-Base Voltage, VCB -- V 5 7 1.0 5 7 100 IT00491 NF -- IC [Tr2] 10 2 3 5 7 10 2 3 0.6 0.8 1.0 fT -- IC [Tr2] 7 V =5 V CE 5 2V 3 2 2 3 5 7 2 10 3 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 2 0 7 1.0 2 3 5 7 10 2 3 Collector Current, IC – mA 5 7 100 IT00493 3 5 7 100 IT00492 Collector-to-Base Voltage, VCB -- V Forward Transfer Gain, S21e – dB 2V 2 5V V CE = Noise Figure, NF – dB 4 7 100 IT00490 [Tr2] f=1MHz 2 S21e -- IC [Tr2] f=1GHz f=1GHz 6 5 Cre -- VCB 16 8 1.2 IT00488 10 Reverse Transfer Capacitance, Cre – pF Output Capacitance, Cob – pF 5 2 0.4 Base-to-Emitter Voltage, VBE – V Collector Current, IC – mA f=1MHz 7 0.1 0.1 0.2 IT00489 Cob -- VCB 10 20 1.0 1.0 10 2 40 0 Gain-Bandwidth Product, fT – GHz DC Current Gain, hFE 3 5 7 1.0 2V 60 10 5 3 VCE=5V 0 IT00487 100 80 10 Collector-to-Emitter Voltage, VCE – V 7 [Tr2] 0.30mA 40 0 IC -- VBE [Tr2] 14 =5V VCE 12 2V 10 8 6 4 2 0 1.0 2 3 5 7 10 2 3 Collector Current, IC – mA 5 7 100 IT00494 No.6179–5/9 FH203 PC -- Ta 220 [Tr2] Collector Dissipation, PC – mW 200 180 160 150 140 To t al 120 1u di ss ip 100 ati on nit 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT00495 S Parameters (Common emitter) [Tr2] VCE=2V, IC=5mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.849 –40.1 9.957 151.0 0.039 67.0 0.887 –22.9 200 0.772 –74.0 8.916 131.5 0.061 51.0 0.711 –36.9 400 0.670 –120.2 6.255 107.5 0.079 39.3 0.503 –47.1 600 0.626 –145.2 4.746 92.7 0.085 38.6 0.424 –49.5 800 0.614 –158.6 3.652 83.9 0.093 39.6 0.369 –52.6 1000 0.608 –168.4 3.001 76.2 0.099 42.3 0.345 –55.5 1200 0.607 –175.8 2.518 69.4 0.107 44.9 0.332 –58.8 1400 0.608 178.5 2.185 63.5 0.116 47.5 0.329 –62.4 1600 0.606 172.4 1.911 57.9 0.124 49.7 0.325 –66.7 1800 0.605 167.5 1.717 53.0 0.137 52.8 0.331 –70.7 2000 0.605 162.6 1.580 48.3 0.152 55.0 0.345 –74.5 ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 VCE=2V, IC=10mA, ZO=50Ω Freq (MHz) | S11 | 100 0.743 –57.3 17.164 142.7 0.034 60.5 0.797 –32.6 200 0.655 –99.5 13.461 120.8 0.049 48.5 0.570 –48.8 400 0.589 –140.3 8.090 100.0 0.061 44.8 0.363 –58.8 600 0.572 –158.3 5.662 88.7 0.073 48.1 0.289 –61.2 800 0.569 –169.0 4.311 81.5 0.085 51.2 0.250 –63.7 1000 0.567 –176.5 3.506 74.9 0.098 54.1 0.233 –66.5 1200 0.568 177.4 2.945 68.9 0.111 55.8 0.225 –69.7 1400 0.566 172.3 2.561 63.6 0.125 56.8 0.223 –73.3 1600 0.567 167.2 2.255 58.7 0.140 57.9 0.224 –77.7 1800 0.567 163.1 2.028 54.4 0.155 58.6 0.228 –81.4 2000 0.569 159.0 1.848 49.8 0.171 58.0 0.236 –85.0 No.6179–6/9 FH203 S Parameters (Common emitter) [Tr2] VCE=2V, IC=20mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.625 –84.7 24.593 132.0 0.028 56.0 0.685 –43.4 200 0.576 –125.3 16.266 111.2 0.039 49.5 0.442 –59.3 400 0.554 –155.3 8.969 94.8 0.052 52.2 0.265 –68.5 600 0.551 –168.4 6.117 85.7 0.067 57.3 0.205 –72.0 800 0.552 –176.6 4.632 79.5 0.083 60.1 0.179 –74.9 1000 0.551 177.4 3.752 73.6 0.098 62.1 0.169 –78.2 1200 0.553 172.4 3.143 68.2 0.115 62.6 0.164 –81.7 1400 0.553 167.9 2.725 63.3 0.132 62.1 0.165 –85.1 1600 0.554 163.7 2.410 58.7 0.148 61.9 0.168 –89.7 1800 0.555 159.9 2.169 54.6 0.166 61.3 0.174 –92.8 2000 0.556 156.2 1.972 50.2 0.183 60.1 0.180 –96.5 VCE=2V, IC=30mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.587 –105.4 25.998 124.3 0.026 53.7 0.607 –48.2 200 0.572 –139.6 16.084 106.4 0.034 50.7 0.373 –62.2 400 0.564 –162.6 8.697 92.1 0.048 56.4 0.224 –69.1 600 0.563 –173.3 5.919 83.8 0.064 61.5 0.176 –72.2 800 0.564 179.6 4.493 77.9 0.081 63.5 0.157 –74.6 1000 0.566 174.2 3.630 72.2 0.097 65.2 0.151 –78.0 1200 0.568 169.7 3.045 66.9 0.115 65.2 0.151 –81.8 1400 0.567 165.7 2.635 62.2 0.132 64.7 0.154 –85.5 1600 0.569 161.6 2.332 57.6 0.150 64.1 0.158 –90.1 1800 0.568 158.1 2.100 53.4 0.168 63.0 0.165 –93.5 2000 0.570 154.5 1.906 49.3 0.187 61.8 0.171 –97.7 ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 VCE=5V, IC=5mA, ZO=50Ω Freq (MHz) | S11 | 100 0.868 –35.6 10.432 152.9 0.030 68.8 0.917 –16.7 200 0.777 –68.9 8.971 135.0 0.049 53.9 0.777 –27.4 400 0.668 –113.6 6.913 109.9 0.064 42.4 0.595 –35.1 600 0.626 –137.4 5.027 95.9 0.071 40.1 0.501 –37.4 800 0.600 –153.7 3.883 86.8 0.078 41.7 0.460 –38.9 1000 0.588 –164.5 3.228 78.7 0.083 45.0 0.443 –41.0 1200 0.585 –172.6 2.775 71.8 0.090 50.0 0.442 –43.4 1400 0.581 –179.1 2.407 66.0 0.097 53.0 0.435 –46.5 1600 0.581 174.8 2.134 60.5 0.106 56.1 0.430 –50.1 1800 0.581 169.8 1.914 55.5 0.118 59.1 0.433 –53.8 2000 0.587 165.2 1.741 50.7 0.130 60.9 0.433 –57.6 No.6179–7/9 FH203 S Parameters (Common emitter) [Tr2] VCE=5V, IC=10mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.762 –50.3 17.603 145.9 0.027 64.2 0.846 –24.5 200 0.664 –89.3 14.157 124.8 0.040 52.5 0.647 –36.3 400 0.573 –131.9 8.865 102.9 0.053 47.4 0.453 –41.5 600 0.544 –152.3 6.246 91.1 0.062 49.9 0.381 –41.8 800 0.537 –164.1 4.783 83.6 0.072 53.9 0.349 –42.5 1000 0.533 –172.3 3.910 76.9 0.082 56.9 0.334 –44.1 1200 0.536 –178.7 3.292 71.1 0.095 59.6 0.327 –46.5 1400 0.533 175.7 2.843 65.8 0.107 61.1 0.322 –49.3 1600 0.535 170.4 2.510 61.0 0.119 62.0 0.324 –52.9 1800 0.535 166.1 2.254 56.3 0.134 63.2 0.326 –56.3 2000 0.537 161.7 2.043 51.8 0.148 63.4 0.330 –60.0 ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 VCE=5V, IC=30mA, ZO=50Ω Freq (MHz) | S11 | 100 0.589 –84.0 29.588 131.2 0.021 59.1 0.699 –35.5 200 0.530 –123.9 18.896 111.2 0.030 53.4 0.471 –44.4 400 0.506 –153.8 10.319 95.1 0.042 58.1 0.318 –44.4 600 0.502 –167.0 7.012 86.5 0.055 62.7 0.270 –43.2 800 0.502 –175.2 5.310 80.4 0.070 65.3 0.252 –43.5 1000 0.503 178.6 4.303 74.7 0.084 66.7 0.244 –45.3 1200 0.505 173.7 3.602 69.5 0.100 67.2 0.241 –48.1 1400 0.505 169.3 3.117 64.8 0.114 67.1 0.243 –51.2 1600 0.507 165.2 2.753 60.3 0.130 67.0 0.243 –55.2 1800 0.508 161.5 2.479 56.3 0.146 66.5 0.248 –58.6 2000 0.510 157.9 2.245 52.0 0.163 65.7 0.251 –62.6 VCE=5V, IC=50mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.569 –109.2 27.869 122.4 0.019 53.8 0.603 –35.3 200 0.558 –142.4 16.434 105.1 0.025 52.5 0.416 –37.5 400 0.554 –164.6 8.680 91.6 0.037 60.7 0.321 –34.0 600 0.556 –174.9 5.895 83.7 0.050 66.4 0.295 –34.0 800 0.557 178.4 4.465 78.0 0.065 69.3 0.286 –36.2 1000 0.559 173.3 3.616 72.4 0.079 70.3 0.282 –39.6 1200 0.560 169.0 3.032 67.4 0.096 71.0 0.283 –43.5 1400 0.560 164.9 2.627 62.5 0.111 70.9 0.283 –47.4 1600 0.560 161.2 2.319 58.0 0.127 70.6 0.285 –52.3 1800 0.561 157.8 2.087 53.7 0.144 70.3 0.289 –56.4 2000 0.563 154.2 1.900 49.5 0.161 69.4 0.293 –61.1 No.6179–8/9 FH203 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 1999. Specifications and information herein are subject to change without notice. PS No.6179–9/9