SKDH 115 SEMIPONTTM 5 Half Controlled 3-phase Bridge Rectifier /01 /1$ /,1 2, 3 445 6 / 4*55 / 4*55 3 75 8 09, 44):4* 4'55 4'55 09, 44):4' Symbol Conditions Values Units 2, 3 75 8 445 6 201$ 2+01 -; 3 *) 8< 45 -; 3 4*) 8< 45 -; 3 *) 8< 7$( %%% 45 45)5 =)5 ))55 6 6 6> -; 3 4*) 8< 7$( %%% 45 ?)55 6> .% 4$7 .% 4$4 / / > /$ /+ /@ : /+@ -; 3 *) 8< 2$ 2+34*56 -; 3 4*) 8< -; 3 4*) 8 .% ' A .% *5 6 2,,< 2, -; 3 4*) 8< /,, 3 /,1< /, 3 /1 SKDH 115 -; 3 8< 2B 3 6< B: 3 6:C C Target Data /, 3 D /,1 C Features -: : E 2 -; 3 4*) 8 -; 3 4*) 8< 3 )5%%%'5 # -; 3 4*) 8< % -; 3 *) 8< % : .% 2 -; 3 *) 8< B 3 (( A /B 2B /B, -; 3 *) 8< % % -; 3 *) 8< % % -; 3 4*) 8< % % 2B, -; 3 4*) 8< % % ! " ! #$ % & '( )(* Typical Applications + , - . , ;! : -; / 1 1 % % )5 #< %%%< 4 : 4 % H .% 0&12K@I ) .% )55 .% )5 4)5 ! : *55 /:C 6:C C 6 ! : ?55 6 % ( % 4)5 .% 5$*) / 6 / .% ) 6 5$7? 9:F 9:F 9:F ! ?5 %%% G 4*) ! ?5 %%% G 4*) 8 8 *'5 8 ('55 (555 *$) / I I J) B '4 SKDH 1 31-10-2005 RAM © by SEMIKRON SKDH 115 Fig. 1 Power diassipation vs. output current Fig. 2 Transient thermal impedance vs. time Fig. 3 Single diode on-state characteristic Fig. 4 Single thyristor on-state characteristic Fig. 5 Gate trigger characteristic 2 31-10-2005 RAM © by SEMIKRON SKDH 115 Dimensions in mm B '4 , B '4 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 31-10-2005 RAM © by SEMIKRON