VISHAY MBR10H100CTHE3/45

MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
ITO-220AB
MBR10H90CT
MBR10H100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
1
2
3
MBRF10H90CT
MBRF10H100CT
PIN 1
PIN 2
PIN 3
TO-263AB
K
2
TYPICAL APPLICATIONS
1
MBRB10H90CT
MBRB10H100CT
PIN 2
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
K
PIN 1
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
5Ax2
VRRM
90 V, 100 V
IFSM
150 A
VF
0.61 V
IR
3.5 µA
TJ max.
175 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H90CT
MBR10H100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
0.5
A
Maximum average forward rectified current at TC = 105 °C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
Document Number: 88668
Revision: 08-Nov-07
dV/dt
10 000
V/µs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage per diode (1)
IF = 5.0 A
IF = 5.0 A
IF = 10 A
IF = 10 A
Maximum reverse current per diode at working peak
reverse voltage (1)
SYMBOL
VALUE
UNIT
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
0.76
0.61
0.85
0.71
V
TJ = 25 °C
TJ = 100 °C
IR
3.5
4.5
µA
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJC
2.2
5.2
2.2
°C/W
,
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR10H100CT-E3/45
PREFERRED P/N
1.85
45
50/tube
Tube
ITO-220AB
MBRF10H100CT-E3/45
1.79
45
50/tube
Tube
TO-263AB
MBRB10H100CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB10H100CT-E3/81
1.35
81
800/reel
Tape reel
(1)
TO-220AB
MBR10H100CTHE3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF10H100CTHE3/45 (1)
1.79
45
50/tube
Tube
TO-263AB
MBRB10H100CTHE3/45
(1)
1.35
45
50/tube
Tube
TO-263AB
MBRB10H100CTHE3/81 (1)
1.35
81
800/reel
Tape reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
175
MBR
MBRB
10
Peak Forward Surge Current (A)
Average Forward Current (A)
12
8
6
MBRF
4
2
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Derating Curve Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88668
Revision: 08-Nov-07
MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 175 °C
TJ = 150 °C
10
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.1
TJ = - 40 °C
0.3
0.5
0.7
0.9
Junction to Case
10
1
MBRF
0.1
0.01
1.1
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10 000
TJ = 150 °C
1000
TJ = 125 °C
100
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
Junction to Case
10
1
MBRF
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 88668
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
7° REF.
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88668
Revision: 08-Nov-07
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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