SKM 75GB063D ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
()'
)
)>?
('
,A (
8 19 =9 :)
8 / B'>-B C Superfast NPT-IGBT
Modules
SKM 75GB063D
*
*>?
8 19 F0 :)
8 / *?
8 /0 G &G A 8 /90 :)
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
(
$ )
)
)
%
* + % ,
)- !!
! #
.) .
)
!
$ ! !
/0 !
!
10 Typical Applications
% ! !
2
,
% , 3
;00
/00 =9
/90
@ 10
D0 &&& E /19 /90
(
(
:)
1900
(
=9 90
/90
-
DD0
-
/00 =9
100
-
=10
-
Freewheeling diode
*
*>?
8 19 F0 :)
8 / *?
8 /0 G G A 8 /90 :)
Characteristics
Symbol Conditions
IGBT
SKM 75GAL063D
Units
-) / &
SKM 75GAR063D
Values
Inverse diode
SEMITRANSTM 2
8 19 :) %
!
-) ! %
4
5 /06"7
('
)'
()'B
)'
(' 8 ()' ) 8 / (' 8 0 ()' 8 ()' A 8 19 /19 :)
A 8 19 /19 :)
(' 8 /9 ( A 8 19 /19 :)
()'
) 8 =9 - (' 8 /9 ( ,
)
)
)
)'
!
% !
(' 8 0 ()' 8 19 ( % 8 / ?"7
>))JE''J
& 8 19 /19 :)
!
!%%
%
()) 8 H00 ( ) 8 =9 > 8 >%% 8 /9 I A 8 /19 :)
(' 8 @ /9 (
8 19 :) %
!
min.
D9
typ.
max.
99
0/
/09 /
/D /F=
;9
0H
1/ 1D
19 1F
(
H0
*
*
*
"
D1
09
0H
' '%%
Units
(
(
I
0=9 /
I
;0
90
H90
H9
H 19
K
Inverse diode
(* 8 (')
(B
>>?
M
* 8 =9 -G (' 8 0 (G A 8 19 /19 :)
A 8 /19 :)
A 8 /19 :)
* 8 =9 -G A 8 /19 :)
!3! 8 F00 -3N
'
(' 8 0 (
/99 /99
/0
H0
H=
/L
0L
/HH
(
(
I
N)
K
FWD
(* 8 (')
(B
>>?
M
* 8 /00 -G (' 8 0 ( A 8 19 /19 :)
A 8 /19 :)
A 8 /19 :)
* 8 /00 -G A 8 /19 :)
!3! 8 0 -3N
'
(' 8 (
/99 /99
F
DD
;
/L
0L
/0
(
(
I
N)
K
Thermal characteristics
>A
>A.
>A*.
,
.!
*P.
0H9
/
0;
O3P
O3P
O3P
>
!
009
O3P
9
9
/;0
Mechanical data
GB
1
GAL
GAR
?
?
6 ?;
?9
19-09-2005 RAA
H
19
© by SEMIKRON
SKM 75GB063D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
19-09-2005 RAA
© by SEMIKRON
SKM 75GB063D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
19-09-2005 RAA
© by SEMIKRON
SKM 75GB063D ...
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
)
. ;/
-
)
. ;1 Q . ;/
->
)
. ;H Q . ;/
)
. ;/
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-09-2005 RAA
© by SEMIKRON