SKM 200GB176D H10 Absolute Maximum Ratings Symbol Conditions IGBT " "78 :< *, SEMITRANSTM 3 Trench IGBT Modules 1% *6(, 3 4 =)7#"=> ? "A "A78 1% *6(, 3 4 "A-8 4( B +B < 4%( 3 "A-8 4( B +B < 4%( 3 Target Data Characteristics Symbol Conditions IGBT Typical Applications # $ %&% ' &%( # ) *! +, Remarks # - . /0' 12 $ 4&(( 1 ( *46(, 9(( ; 1( ' @( +++ / 4%( *41%, # # 3 @((( 14( *4@(, 9(( # # 44(( # 14( *4@(, 9(( # # 44(( # Freewheeling diode SKM 200GB176D H10 Units # 4 + 1% *6(, 3 4 ! " Values Inverse diode "A "A78 Features 1% 3 $ :* , "*=, : " # : ( - < 1% *, 3 < 1% *, 3 : 4% < 1% *41%, 3 *, " 4%( # : 4% F $ $ : ( 1% 4 8E 7G/G + ' 1% *41%, 3 $*, $*, 41(( " 4%( # 7: 7: % D < 41% 3 : ; 4% 1% 3 $ min. %1 typ. max. Units %6 (4 4 *(C, & *4(, @ (9 41 *44, 69 *41, # D 1 *1@, 1@% *1C, 1( A A A 419 49 4 *, (9% *(%, D 9 ( @% & ( 4@( C9 *%6, H Inverse diode A *=, "778 I "A 4%( #B : ( B < 1% *41%, 3 < 1% *41%, 3 < 1% *41%, 3 "A 4%( #B < 41% * , 3 $0$ 9&(( #0J : ( 4 4 % 4& 44 9& 4C% %1 49 1& D # J 94 H Thermal characteristics 7 *<', 7 *<',N ":K " N$ (41 (1% L0M L0M 7 *', $ ((96 L0M % % > > 91% Mechanical data 8 8 O 8 8 9 1% GB 1 15-12-2005 SCT © by SEMIKRON SKM 200GB176D H10 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 15-12-2005 SCT © by SEMIKRON SKM 200GB176D H10 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 15-12-2005 SCT © by SEMIKRON SKM 200GB176D H10 Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm :K N % N % This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 15-12-2005 SCT © by SEMIKRON