FAIRCHILD IRFS840BF

IRF840B/IRFS840B
500V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
•
•
•
•
•
•
8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
TO-220
G DS
GD S
IRF Series
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IRF840B
IRFS840B
Units
V
8.0
8.0
A
5.1
5.1
A
32
32
A
500
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
8.0
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
13.4
5.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 30
V
320
mJ
134
1.08
44
0.35
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case Max.
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient Max.
62.5
62.5
°C/W
©2005 Fairchild Semiconductor Corporation
IRF840B
0.93
IRFS840B
2.86
Units
°C/W
Rev. B, February 2005
IRF840B/IRFS840B
February 2005
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
500
--
--
V
--
0.55
--
V/°C
VDS = 500 V, VGS = 0 V
--
--
10
µA
VDS = 400 V, TC = 125°C
--
--
100
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.65
0.8
Ω
--
7.3
--
S
--
1400
1800
pF
--
145
190
pF
--
35
45
pF
--
22
55
ns
--
65
140
ns
--
125
260
ns
--
75
160
ns
--
41
53
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.0 A
gFS
Forward Transconductance
VDS = 40 V, ID = 4.0 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 8.0 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 8.0 A,
VGS = 10 V
(Note 4, 5)
--
6.5
--
nC
--
17
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.0
A
ISM
--
--
32
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 8.0 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
390
--
ns
Qrr
Reverse Recovery Charge
--
4.2
--
µC
VGS = 0 V, IS = 8.0 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Electrical Characteristics
IRF840B/IRFS840B
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
0
10
o
25 C
o
-55 C
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
-1
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
3.0
VGS = 10V
2.0
VGS = 20V
1.5
1.0
1
10
0
10
25℃
150℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
-1
0
5
10
15
25
30
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
Capacitance [pF]
20
12
VDS = 100V
10
2000
Ciss
1500
Coss
1000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VGS, Gate-Source Voltage [V]
0.5
VDS = 250V
8
VDS = 400V
6
4
2
※ Note : ID = 8.0 A
0
0
-1
10
0
10
1
10
0
5
10
15
20
25
30
35
40
45
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
(Continued)
1.2
3.0
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
IRF840B/IRFS840B
Typical Characteristics
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2
10
100 µs
1 ms
10 ms
1
10
10 µs
DC
0
10
-1
10 ms
100 ms
DC
0
10
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
10
100 µs
1 ms
1
10
ID, Drain Current [A]
ID, Drain Current [A]
10
-2
10
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
2
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
0
1
10
2
10
3
10
10
VDS, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for IRF840B
Figure 9-2. Maximum Safe Operating Area
for IRFS840B
10
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
Zθ JC(t), Thermal Response
10
IRF840B/IRFS840B
Typical Characteristics
(Continued)
0
D = 0 .5
※ N o te s :
1 . Z θ J C (t) = 0 .9 3 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
10
0 .1
-1
0 .0 5
PDM
0 .0 2
0 .0 1
10
t1
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for IRF840B
Zθ JC(t), Thermal Response
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C (t) = 2 .8 6 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1
0 .0 5
10
-1
0 .0 2
PDM
0 .0 1
t1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for IRFS840B
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2005 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. B, February 2005
IRF840B/IRFS840B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Package Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Package Dimensions
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2005 Fairchild Semiconductor Corporation
Rev. I15