FFD04H60S tm Hyperfast II Rectifier Features 4A, 600V Hyperfast II Rectifier • High Speed Switching, trr < 50ns The FFD04H60S is a hyperfast II rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • High Reverse Voltage, VF < 2.1V @ 4A • RoHS Compliant Applications • General Purpose • Switching Mode Power Supply • Free-Wheeling Diode for Motor Application • Power Switching Circuits 33 1 1 2 2 DPAK DPAK (TO-252) (TO252) 1,3 Cathode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage VRWM VR IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Parameter Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 4 A @ TC = 130oC 40 Operating and Storage Temperature Range A o -65 to +150 C Thermal Characteristics Symbol RθJC Parameter Ratings Maximum Thermal Resistance, Junction to Case Units o 4.0 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F04H60S FFD04H60S D-PAK 13”Dia - 2500 ©2008 Fairchild Semiconductor Corporation FFD04H60S Rev. A 1 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier February 2009 Symbol Min. Typ. Max. Units VFM1 IF = 4A IF = 4A Parameter TC = 25oC TC = 125oC - - 2.1 1.7 V IRM1 VR = 600V VR = 600V TC = 25oC TC = 125oC - - 100 200 μA trr IF = 1A, di/dt = 100A/μs, VCC = 30V IF = 4A, di/dt = 100A/μs, VCC = 390V TC = 25oC TC = 25oC - 19 25 60 ns Irr Qrr IF = 4A, di/dt = 100A/μs, VCC = 390V TC = 25oC - 1.5 18 - A nC WAVL Avalanche Energy ( L = 40mH) 4 - - mJ Notes: 1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2% Test Circuit and Waveforms FFD04H60S Rev. A 2 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier Electrical Characteristics TC = 25oC unless otherwise noted Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 20 10 10 o TC = 100 C Reverse Current , IR [μA] Forward Current, IF [A] o TC = 100 C o TC = 25 C 1 o TC = 75 C 1 o TC = 75 C 0.1 0.01 o TC = 25 C 0.1 0.0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 3.0 Figure 3.Typical Junction Capacitance 0.001 0 40 IF = 4A Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] Typical Capacitance at 0V = 55 pF 50 40 30 20 1 10 Reverse Voltage, VR [V] o TC = 100 C o 30 TC = 75 C o 20 10 100 100 TC = 25 C 200 300 di/dt [A/μs] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 18 Average Forward Current, IF(AV) [A] 8 Reverse Recovery Current, Irr [A] 500 Figure 4. Typical Reverse Recovery Time vs. di/dt 60 10 0.1 100 200 300 400 Reverse Voltage, VR [V] 6 o TC = 100 C 4 o TC = 75 C o TC = 25 C 2 15 12 9 6 3 IF = 4A 0 100 FFD04H60S Rev. A 200 300 di/dt [A/μs] 400 0 25 500 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier Typical Performance Characteristics FFD04H60S Hyperfast II Rectifier Mechanical Dimensions FFD04H60S Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FFD04H60S Rev. A 5 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.