STMICROELECTRONICS 74V1G70

74V1G70

SINGLE BUFFER
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HIGH SPEED: tPD = 4.3 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25 oC
HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
technology.
S
(SOT23-5L)
C
(SC-70)
ORDER CODE:
74V1G70S
74V1G70C
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999
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74V1G70
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
1
N.C.
NAME AND FUNCT ION
2
1A
Data Input
4
1Y
Data Output
3
GND
Ground (0V)
5
VCC
Positive Supply Voltage
Not Connected
TRUTH TABLE
A
Y
L
L
H
H
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Supply Voltage
-0.5 to +7.0
V
VI
DC Input Voltage
-0.5 to +7.0
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
DC Input Diode Current
- 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 25
mA
± 50
mA
VCC
ICC or IGND DC VCC or Ground Current
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
-65 to +150
o
260
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
2.0 to 5.5
V
Input Voltage
0 to 5.5
V
VO
Output Voltage
0 to VCC
Top
dt/dv
Operating Temperature
Input Rise and Fall Time (see note 1) (VCC = 3.3 ± 0.3V)
(V CC = 5.0 ± 0.5V)
1) VIN from 30% to70%of VCC
2/7
Unit
VI
VCC
Supply Voltage
Valu e
-40 to +85
0 to 100
0 to 20
V
o
C
ns/V
ns/V
74V1G70
DC SPECIFICATIONS
Symb ol
VIH
VIL
VOH
VOL
Parameter
T est Cond ition s
Min.
ICC
Typ .
Un it
-40 to 85 o C
Max.
Min .
Max.
High Level Input
Voltage
2.0
1.5
1.5
3.0 to 5.5
0.7VCC
0.7VCC
Low Level Input
Voltage
2.0
0.5
0.5
3.0 to 5.5
0.3VCC
0.3VCC
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage Current
Quiescent Supply
Current
V
2.0
I O =-50 µA
1.9
2.0
1.9
3.0
IO=-50 µA
IO=-50 µA
2.9
3.0
2.9
4.5
4.4
4.5
4.4
3.0
IO=-4 mA
2.58
2.48
4.5
IO=-8 mA
3.94
3.8
2.0
I O=50 µA
0.0
0.1
0.1
3.0
IO=50 µA
IO=50 µA
0.0
0.1
0.1
0.0
0.1
0.1
0.44
4.5
II
Value
T A = 25 o C
V CC
(V)
V
V
V
3.0
IO=4 mA
0.36
4.5
IO=8 mA
0.36
0.44
0 to 5.5
VI = 5.5V or GND
±0.1
±1.0
µA
5.5
VI = VCC or GND
1
10
µA
AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns)
Symb ol
Parameter
V CC
(V)
tPLH
tPHL
Propagation Delay
Time
Test Co ndition
CL
(pF )
Value
T A = 25 o C
3.3
3.3(*)
5.0(**)
15
50
15
Typ .
3.9
5.7
3.1
(**)
50
4.3
(*)
5.0
Min.
Un it
-40 to 85 o C
Max.
5.6
8.0
4.1
Min .
1.0
1.0
1.0
Max.
6.8
9.2
4.9
5.6
1.0
6.4
ns
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Value
o
T A = 25 C
Min.
-40 to 85 C
Typ .
Max.
10
C IN
Input Capacitance
4
CPD
Power Dissipation
Capacitance (note 1)
11
Un it
o
Min .
Max.
10
pF
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC
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74V1G70
TEST CIRCUIT
CL = 15/50 pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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74V1G70
SOT23-5L MECHANICAL DATA
mm
DIM.
MIN.
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
35.4
57.1
A1
0.00
0.15
0.0
5.9
A2
0.90
1.30
35.4
51.2
b
0.35
0.50
13.7
19.7
C
0.09
0.20
3.5
7.8
D
2.80
3.00
110.2
118.1
E
2.60
3.00
102.3
118.1
E1
1.50
1.75
59.0
68.8
L
0.35
0.55
13.7
21.6
e
0.95
37.4
e1
1.9
74.8
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74V1G70
SC-70 MECHANICAL DATA
mm
DIM.
MIN.
6/7
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.80
1.10
31.5
43.3
A1
0.00
0.10
0.0
3.9
A2
0.80
1.00
31.5
39.4
b
0.15
0.30
5.9
11.8
C
0.10
0.18
3.9
7.1
D
1.80
2.20
70.9
86.6
E
1.80
2.40
70.9
94.5
E1
1.15
1.35
45.3
53.1
L
0.10
0.30
3.9
11.8
e
0.65
25.6
e1
1.3
51.2
74V1G70
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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