74VHCT373A OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT NON INVERTING ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 6.4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS & OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 373 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.9V (Max.) DESCRIPTION The 74VHCT373A is an advanced high-speed CMOS OCTAL D-TYPE LATCH with 3 STATE OUTPUT NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. This 8 bit D-Type latch is controlled by a latch enable input (LE) and an output enable input M (Micro Package) T (TSSOP Package) ORDER CODES : 74VHCT373AM 74VHCT373AT (OE). While the LE input is held at a high level, the Q outputs will follow the data inputs precisely. When the LE is taken low, the Q outputs will be latched precisely at the logic level of D input data. While the (OE) input is low, the 8 outputs will be in a normal logic state (high or low logic level) and while high level the outputs will be in a high impedance state. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS November 1999 1/10 74VHCT373A INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1 OE NAME AND FUNCT ION 2, 5, 6, 9, 12, 15, 16, 19 Q0 to Q7 3 State Outputs 3, 4, 7, 8, 13, 14, 17, 18 D0 to D7 Data Inputs 11 LE Latch Enable Input 10 GND Ground (0V) 20 VCC Positive Supply Voltage 3 State Output Enable Input (Active LOW) TRUTH TABLE INPUTS OUT PUTS OE LE D H X X Z L L X NO CHANGE * L H L L L H H H X:DON’T CARE Z: HIGH IMPEDANCE *: Q OUTPUTSARE LATCHED AT THE TIME WHEN THE LEINPUT ISTAKEN LOW LOGIC LEVEL. LOGIC DIAGRAM 2/10 Q 74VHCT373A ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage (see note 1) -0.5 to +7.0 V VO DC Output Voltage (see note 2) -0.5 to VCC + 0.5 V IIK DC Input Diode Current - 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ± 50 mA ICC or IGND DC VCC or Ground Current Tstg TL Storage Temperature Lead Temperature (10 sec) -65 to +150 o 300 o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. 1) Output in OFF State 2) High or Low State RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Valu e Unit 4.5 to 5.5 V VI Input Voltage 0 to 5.5 V VO Output Voltage (see note 1) 0 to 5.5 V VO Output Voltage (see note 2) Top Operating Temperature dt/dv Input Rise and Fall Time (see note 3) (V CC = 5.0 ± 0.5V) 0 to VCC -40 to +85 0 to 20 V o C ns/V 1) Output in OFF State 2) High or Low State 3)VIN from0.8V to 2 V 3/10 74VHCT373A DC SPECIFICATIONS Symb ol Parameter T est Cond ition s Min. 2 VIH High Level Input Voltage 4.5 to 5.5 VIL Low Level Input Voltage 4.5 to 5.5 VOH High Level Output Voltage VOL IOZ II Value T A = 25 o C V CC (V) Typ . Un it -40 to 85 o C Max. Min . Max. 2 0.8 V 0.8 V 4.5 I O =-50 µA 4.4 4.5 IO=-8 mA 3.94 Low Level Output Voltage 4.5 I O=50 µA 0.1 0.1 4.5 IO=8 mA 0.36 0.44 High Impedance Output Leakage Current 4.5 to 5.5 VI = VIH or VIL VO = 0V to 5.5V ±0.25 ±2.5 µA 0 to 5.5 VI = 5.5V or GND ±0.1 ±1.0 µA Input Leakage Current 4.5 4.4 V 3.8 0.0 V ICC Quiescent Supply Current 5.5 VI = VCC or GND 4 40 µA ∆ICC Additional Worst Case Supply Current 5.5 One Input at 3.4V, other input at VCC or GND 1.35 1.5 mA IOPD Output Leakage Current 0 VOUT = 5.5V 0.5 5.0 µA AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns) Symb ol Parameter V CC (V) Test Co ndition CL (pF ) (*) Value T A = 25 o C Min. Typ . Max. Un it -40 to 85 o C Min . Max. tPLH tPHL Propagation Delay Time LE to Q 5.0 5.0(*) 15 50 5.4 6.0 12.3 13.3 1.0 1.0 13.5 14.5 ns tPLH tPHL Propagation Delay Time D to Q 5.0(*) 5.0(*) 15 50 6.4 7.1 8.5 9.5 1.0 1.0 9.5 10.5 ns tPZL tPZH Output EnableTime 5.0(*) 15 6.2 10.9 1.0 12.5 tPLZ tPHZ tw Output Disable Time 5.0(*) 5.0(*) 50 50 6.9 6.7 11.9 11.2 1.0 1.0 13.5 12.0 Pulse Width (LE) HIGH 5.0(*) 6.5 8..5 ns ts Setup Time D to LE HIGH or LOW 5.0(*) 1.5 1.5 ns th Hold Time D toLE HIGH or LOW 5.0(*) 3.5 3.5 ns Output to Output Skew Time (note 1) 5.0(*) tOSLH tOSHL R L = 1KΩ R L = 1KΩ 50 (*) Voltage range is 5V ± 0.5V Note 1: Parameter guaranteed by design. tsoLH = |tpLHm- tpLHn|, tsoHL = |tpHLm - tpHLn| 4/10 1.0 1.0 ns ns ns 74VHCT373A CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Value T A = 25 o C Min. Un it -40 to 85 o C Typ . Max. Input Capacitance 4 10 COUT Output Capacitance 9 pF CPD Power Dissipation Capacitance (note 1) 14 pF C IN Min . Max. 10 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/8 (per Latch) DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter T est Cond ition s Dynamic Low Voltage Quiet Output (note 1, 2) 5.0 VIHD Dynamic High Voltage Input (note 1, 3) 5.0 VILD Dynamic Low Voltage Input (note 1, 3) 5.0 VOLP VOLV Value o Min. -0.9 C L = 50 pF Un it o T A = 25 C V CC (V) -40 to 85 C Typ . Max. 0.6 0.9 Min . Max. -0.6 2.0 V 0.8 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. TEST CIRCUIT T EST tPLH , tPHL SW IT CH Open tPZL , tPLZ VCC tPZH , tPHZ GND CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 1KΩ orequivalent RT = ZOUT of pulse generator (typically 50Ω) 5/10 74VHCT373A WAVEFORM 1: LE TO Qn PROPAGATION DELAYS, LE MINIMUM PULSE WIDTH, Dn TO LE SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle) 6/10 74VHCT373A WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle) WAVEFORM 3: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) 7/10 74VHCT373A SO-20 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 2.65 0.10 0.104 0.20 a2 MAX. 0.004 0.007 2.45 0.096 b 0.35 0.49 0.013 0.019 b1 0.23 0.32 0.009 0.012 C 0.50 0.020 c1 45 (typ.) D 12.60 13.00 0.496 0.512 E 10.00 10.65 0.393 0.419 e 1.27 0.050 e3 11.43 0.450 F 7.40 7.60 0.291 0.299 L 0.50 1.27 0.19 0.050 M S 0.75 0.029 8 (max.) P013L 8/10 74VHCT373A TSSOP20 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. A MIN. TYP. MAX. 1.1 0.433 A1 0.05 0.10 0.15 0.002 0.004 0.006 A2 0.85 0.9 0.95 0.335 0.354 0.374 b 0.19 0.30 0.0075 0.0118 c 0.09 0.2 0.0035 0.0079 D 6.4 6.5 6.6 0.252 0.256 0.260 E 6.25 6.4 6.5 0.246 0.252 0.256 E1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 BSC 0.0256 BSC K 0o 4o 8o 0o 4o 8o L 0.50 0.60 0.70 0.020 0.024 0.028 A A2 A1 b K e L E c D E1 PIN 1 IDENTIFICATION 1 9/10 74VHCT373A Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 10/10