AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM1011-075 DESCRIPTION BRANDING 1011-75 PIN CONNECTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 10:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-075 is supplied in the AMPAC Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 175 W Device Current* 5.4 A Collector-Supply Voltage* 55 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.86 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/4 AM1011-075 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 10mA IE = 0mA 65 — — V BVEBO IE = 4mA IC = 0mA 3.5 — — V BVCER IC = 20mA RBE = 10Ω 65 — — V ICES VCE = 50V — — 6 mA hFE VCE = 5V 10 — — — IC = 1mA DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT ηc f = 1090MHz PIN = 9W Peak VCC = 50V 75 84 — W f = 1090MHz PIN = 9W Peak VCC = 50V 48 56 — % GP f = 1090MHz PIN = 9W Peak VCC = 50V 9.2 9.7 — dB Note: Pul se Widt h Duty Cycle = = 32 µ Sec 2% TYPICAL PERFORMANCE TYPICAL POWER OUTPUTOUTPUT & COLLECTOR TYPICAL POWER & EFFICIENCY vs POWER INPUT vs COLLECTOR EFFICIENCY POWER INPUT 80 120 P O W E R 110 O U T P U T 80 W A T T S 50 75 POUT 100 70 90 65 70 60 ηC 60 55 50 C O L L E C T O R E F F . 40 45 30 40 20 4 5 6 7 8 9 10 11 12 POWER INPUT (WATTS) 2/4 Unit 13 14 15 16 % AM1011-075 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN Z IN TYPICAL COLLECTOR LOAD IMPEDANCE L H Z CL H L FREQ. L = 1030 MHz H = 1090 MHz ZIN (Ω) 7.0 + j 3.0 ZCL (Ω) 12.5 − j 4.5 11.0 + j 1.5 13.0 − j 3.0 ZCL PIN = 9.0 W VCC = 50 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 : 0.8—8.0 pF Johanson Gigatrim Capacitor : 100 pF Chip Capacitor : 1500 pF Filtercon Feedthru C4 : 1 µF, Ceramic Capacitor C5 : 100 µF, Electrolytic Capacitor RFC 1: Au Plated Ni Strap 0.280 Long x 0.035 Wide x 0.005 Thick RFC 2: #26 Wire, 4 Turn 1/16 I.D. 3/4 AM1011-075 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4