AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .. .. .. .. . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN BANDWIDTH 255 MHz .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM0912-300 BRANDING 0912-300 DESCRIPTION The AM0912-300 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. PIN CONNECTION The AM0912-300 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. This device is capable of withstanding 15:1 VSWR mismatch load condition at any phase angle under full rated conditions. The AM0912-300 is housed in the unique BIGPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 940 W Device Current* 24 A Collector-Supply Voltage* 50 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.16 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/6 AM0912-300 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 50mA IE = 0mA 65 80 — V BVEBO IE = 15mA IC = 0mA 3.0 — — V BVCER IC = 50mA RBE = 10Ω 65 — — V ICES VCE = 50V — — 30 mA hFE VCE = 5V 10 — — — IC = 5A DYNAMIC Symbol Min. Typ. Max. Unit POUT ηc f = 960 — 1215MHz PIN = 60W VCC = 50V 300 330 — W f = 960 — 1215MHz PIN = 60W VCC = 50V 38 45 — % GP f = 960 — 1215MHz PIN = 60W VCC = 50V 7.0 7.4 — dB Note: Pul se Widt h Duty Cycle 2/6 Value Test Conditions = = 10 µ Sec 10% AM0912-300 TYPICAL PERFORMANCE TYPICAL POWER OUTPUT vs POWER INPUT TYPICAL BROADBAND RESPONSE Conditions: PW = 10 µs, 10% VCC = 50 V MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE 3/6 AM0912-300 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 60 W VCC = 50 V Z O = 50 ohms FREQ. ZIN (Ω) ZCL (Ω) L = 960 MHz 2.0 + j 3.6 1.7 − j 2.2 M = 1090 MHz 3.5 + j 1.7 2.0 − j 1.7 H = 1215 MHz 1.6 + j 0.5 1.8 − j 2.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 60 W VCC = 50 V ZO = 50 ohms 4/6 AM0912-300 TEST CIRCUIT .200 .130 .100 .190 Ref. Dwg. No. C125519 .125 PACKAGE MECHANICAL DATA 5/6 AM0912-300 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6