AM80912-085 .. .. .. .. RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 85 W MIN. WITH 7.5 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM80912-085 BRANDING 80912-85 PIN CONNECTION DESCRIPTION The AM80912-085 is designed for specialized avionics applications including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM80912-085 is housed in a unique BIGPAC Hermetic Metal/Ceramic package with in- 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 300 W Device Current* 8.0 A Collector-Supply Voltage* 40 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.75 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/5 AM80912-085 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO IC = 25mA IE = 0mA 55 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V BVCER IC = 25mA RBE = 10Ω 55 — — V ICES VBE = 0V VCE = 35V — — 20 mA hFE VCE = 5V IC = 2A 20 — 200 — DYNAMIC Value Symbol Min. Typ. Max. Unit POUT ηc f = 960 — 1215MHz PIN = 15W VCC = 35V 85 — — W f = 960 — 1215MHz PIN = 15W VCC = 35V 40 — — % GP f = 960 — 1215MHz PIN = 15W VCC = 35V 7.5 — — dB Note: 2/5 Test Conditions Pul se format: 6.4 µS on 6.6 µ S off , repeat f or 3.3 ms, then off for 4.5125 ms Duty Cycle: Burst 49.2%, overall 20.8% AM80912-085 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN ZIN L H PIN = 15 W VCC = 35 V Normalized to 10 ohms FREQ. ZIN(Ω) ZCL(Ω) L = 960 MHz 3.0 + j 5.0 7.0 − j 5.0 • = 1025 MHz 3.5 + j 6.0 5.3 − j 3.0 M = 1090 MHz 5.5 + j 5.5 3.7 − j 1.8 • = 1150 MHz 5.5 + j 5.0 3.3 − j 2.0 H = 1215 MHz 5.3 + j 4.5 3.0 − j 2.5 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L ZCL H PIN = 15 W VCC = 35 V Normalized to 10 ohms 3/5 AM80912-085 TEST CIRCUIT Ref. Dwg. No. J-313119 .080 All dimensions are in inches. Substrate material: .025 thick AI2O3 (Er = 9.6) C1 C2 C3 C4 : : : : 0.3—3.5 pF Variable Johanson Capacitor or Equiv. 0.3—3.5 pF Variable Johanson Capacitor or Equiv. 100 pF Chip Capacitor 1500 pF Erie RF Feedthrough, or Equiv. PACKAGE MECHANICAL DATA 4/5 C5 C6 L1 L2 : : : : 100 MF, Electrolytic Capacitor, 50V 1500 pF Erie RF Feedthrough, or Equiv. No. 32 Wire, 4 Turns 1/16” I.D. No. 32 Wire, 4 Turns 1/16” I.D. AM80912-085 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5