STMICROELECTRONICS AM81214-015

AM81214-015
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 14.5 W MIN. WITH 8.6 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM 81214-015
BRANDING
81214-15
PIN CONNECTION
DESCRIPTION
The AM81214-015 device is a high power Class C
transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
is capable of withstanding 5:1 output VSWR at rated
RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure
high reliability and product consistency.
AM81214-015 is supplied in the grounded IMPAC
Hermetic Metal/Ceramic package with internal
input/output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
PDISS
IC
VCC
TJ
T STG
Parameter
Value
Unit
37.5
W
Device Current*
1.8
A
Collector-Supply Voltage*
32
V
Junction Temperature (Pulsed RF Operation)
250
°C
− 65 to +200
°C
4.0
°C/W
Power Dissipation*
(TC ≤ 100°C)
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
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AM81214-015
ELECTRICAL SPECIFICATIONS (T case = 25°C)
STATIC
Value
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
BV CBO
IC = 15mA
IE = 0mA
48
—
—
V
BV EBO
IE = 1.5mA
IC = 0mA
3.5
—
—
V
BV CER
IC = 15mA
RBE = 10Ω
48
—
—
V
ICES
VCE = 28V
VBE = 28V
—
—
1.5
mA
hFE
VCE = 5V
IC = 1A
30
—
300
—
DYNAMIC
Value
Symbol
Test Conditions
Typ.
Max.
Unit
PIN
ηc
f = 1.2 — 1.4GHz
PIN = 2W Peak
VCC = 28V
14.5
17.0
—
W
f = 1.2 — 1.4GHz
PIN = 2W Peak
VCC = 28V
48
58
—
%
GP
f = 1.2 — 1.4GHz
PIN = 2W Peak
VCC = 28V
8.6
9.3
—
dB
Note:
Pul se Widt h
Duty Cycle
=
=
1000
µS
10%
TYPICAL PERFORMANCE
TYPICAL BROADBAND
PERFORMANCE
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Min .
AM81214-015
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
FREQ.
ZIN (Ω)
ZCL (Ω)
L = 1.2 GHz
3.0 + j 6.5
16 + j 3.0
M = 1.3 GHz
3.5 + j 7.5
13 + j 6.0
H = 1.4 GHz
5.0 + j 7.0
11 + j 5.0
PIN = 2 W
VCC = 28 V
Normalized to 50 ohms
TEST CIRCUIT
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AM81214-015
PACKAGE MECHANICAL DATA
.318/
.306
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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