AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .. .. .. . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 200 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING 1214-200 AM1214-200 PIN CONNECTION DESCRIPTION The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-200 is supplied in the BIGPAC hermetic metal/ceramic package with internal input/output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 575 W Device Current* 16 A Collector-Supply Voltage* 40 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.26 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/4 AM1214-200 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 50mA IE = 0mA 70 — — V BVEBO IE = 30mA IC = 0mA 3.0 — — V BVCES IC = 50mA VBE = 0V 70 — — V ICES VBE = 0V VCE = 40V — — 30 mA hFE VCE = 5V IC = 500mA 10 — — — DYNAMIC Symbol Value Test Conditions Typ. Max. Unit POUT ηc f = 1215 — 1400MHz PIN = 40W VCC = 40V 200 — — W f = 1215 — 1400MHz PIN = 40W VCC = 40V 45 — — % GP f = 1215 — 1400MHz PIN = 40W VCC = 40V 7.0 — — dB Note: Pulse W idth Duty Cycle = = 150 µ Sec 5% TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY 2/4 Min. AM1214-200 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE L Z IN ZIN H TYPICAL COLLECTOR LOAD IMPEDANCE H ZCL ZCL L FREQ. ZIN (Ω) ZCL (Ω) L = 1215 MHz 2.7 + j 7.0 1.7 − j 4.0 M = 1300 MHz 3.0 + j 4.8 1.4 − j 4.0 H = 1400 MHz 1.8 + j 1.7 1.0 − j 2.0 PIN = 40W VCC = 40V Normalized to 50 ohms TEST CIRCUIT All dimensions are in millimeters. Substrate 0.025” Thick AL203 (Er = 9.8) C1,C2: C3 : C4 : C5 : 0.6 - 4.5 pF Johanson 7475 Variable Capacitor 100 pF Case B Chip Capacitor 100 µF, 63V Electrolytic Capacitor 68 pF Case B Chip Capacitor C6 C7 C8 L1 L2 : : : : : 620 pF Case B Chip Capacitor 0.1 µF Ceramic Capacitor Feedthru bypass 1200 pF .018” OD Wire - Placement is Critical 4 Turn .018” OD Inductor 3/4 AM1214-200 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4