AM1011-070 .. .. .. . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 70 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM1011-70 DESCRIPTION BRANDING 1011-70 PIN CONNECTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding severe output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-070 is supplied in the AMPAC Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 200 W Device Current* 8.0 A Collector-Supply Voltage* 32 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.68 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/4 AM1011-070 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 25mA IE = 0mA 55 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V BVCER IC = 25mA RBE = 10Ω 55 — — V ICES VCE = 35V — — 20 mA hFE VCE = 5V 20 — 200 — IC = 2mA DYNAMIC Symbol Min. Typ. Max. Unit POUT ηc f = 1090 MHz PIN = 15W VCC = 28V 70 — — W f = 1090 MHz PIN = 15W VCC = 28V 45 — — % GP f = 1090 MHz PIN = 15W VCC = 28V 6.7 — — dB Note: Pulse W idth Duty Cycle 2/4 Value Test Conditions = = 100 µ Sec 2% AM1011-070 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD IMPEDANCE FREQ. ZIN (Ω) ZCL (Ω) L = 1025 MHz 4.7 + j 4.7 3.6 + j 4.3 H = 1090 MHz 4.7 + j 3.9 3.3 + j 4.4 ZCL PIN = 15 W VCC = 28 V Normalized to 50 ohms TEST CIRCUIT Ref. Dwg. No. J313119 All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1 C2 C3 C4 : : : : 0.3—3.5 pF Johanson Gigatrim Capacitor 0.3—3.5 pF Johanson Gigatrim Capacitor 100 pF Chip Capacitor 1500 pF Erie Feedthru, or Equiv. C5 C6 L1 L2 RBE : : : : : 100 MF Electrolytic Capacitor, 50V 1500 pF Erie Feedthrough, or Equiv. #32 Wire, 4 Turn .062 I.D. #32 Wire, 4 Turn .062 I.D. 0 — 1.0 Ohm 3/4 AM1011-070 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4