BTB04-600SL ® STANDARD 4A TRIAC MAIN FEATURES A2 Symbol Value Unit IT(RMS) 4 A VDRM / VRRM 600 V IGT(Q1) 10 mA G A1 A2 DESCRIPTION The BTB04-600SL 4 quadrants TRIAC is intended for general purpose applications where high surge current capability is required, such as lighting, corded power tools, industrial. This TRIAC features a gate current capability sensitivity of 10mA. A1 A2 G TO-220AB ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I2t Parameter A F = 50 Hz t = 20 ms 35 A F = 60 Hz t = 16.7 ms 38 tp = 10ms 6 A2s 50 A/µs 4 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns IGM Peak gate Tstg Tj Unit 4 TO-220AB dI/dt PG(AV) Value Tc = 105°C RMS on-state current (full sine wave) Average gate power dissipation Storage junction temperature range Operating junction temperature range March 2002 - Ed: 1A Repetitive F = 100Hz tp = 20µs Tj = 125°C Tj = 125°C 0.5 W -40 to +150 -40 to +125 °C 1/5 BTB04-600SL ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) Test conditions VD = 12V VGT VD = 12V VGD VD = VDRM IH(2) IT = 100mA IL IG = 1.2IGT Quadrant RL = 30Ω RL = 30Ω RL = 3.3kΩ Tj = 125°C (dV/dt)c (2) Unit mA I - II - III MAX. 10 IV MAX. 25 ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 15 mA MAX. 15 mA I - III - IV II dV/dt (2) Value 25 VD = 67% VDRM gate open Tj = 125°C MIN. 75 V/µs (dI/dt)c = 1.8A/ms MIN. 10 V/µs Tj = 125°C STATIC CHARACTERISTICS Symbol VTM (2) Test Conditions Value Unit ITM = 5A tp = 380µs Tj = 25°C MAX. 1.5 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 100 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C Tj = 125°C MAX. 5 1 µA mA VTO (2) Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. THERMAL RESISTANCE Symbol 2/5 Parameter Value Unit Rth (j-c) Junction to case (AC) 3 °C/W Rth (j-a) Junction to ambient 60 °C/W BTB04-600SL PRODUCT SELECTOR Part Number Voltage Sensitivity Type Package BTB04-600SL 600V 10 mA Standard TO-220AB ORDERING INFORMATION BT B 04 - 600 SL S: SENSITIVITY = 10mA L: LIGHTING APPLICATION TRIAC SERIES INSULATION B: non insulated VOLTAGE: 600V CURRENT: 4A Fig. 1: Maximum power dissipation versus RMS on-state current Fig. 2: RMS on-state current versus case temperature. P(W) IT(RMS)(A) 5 5.0 α=180° α=180° 4.5 4.0 4 3.5 3.0 3 2.5 2.0 2 1.5 180° 1 IT(RMS)(A) 1.0 α α 0.5 Tc(°C) 0.0 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 4.0 Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: On-state characteristics (maximum values) ITM(A) K = [Zth/Rth] 100 1.E+00 Tj=25°C Zth(j-c) Tj=125°C 1.E-01 Zth(j-a) 10 1.E-02 1.E-03 1.E-03 Tj max. : Vto = 0.85 V Rd = 100 mW VTM(V) tp(s) 1 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 1 2 3 4 5 6 7 8 9 10 3/5 BTB04-600SL Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I2t. ITSM(A), I2t (A2s) ITSM(A) 40 1000 Tj initial=25°C 35 t=20ms Non repetitive Tj initial=25°C 30 100 25 dI/dt limitation: 50A/µs ITSM 20 Repetitive Tc=110°C 15 10 I²t 10 5 tp(ms) Number of cycles 0 1 10 100 1 0.01 1000 Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). 0.10 1.00 10.00 Fig. 8: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 3.0 1.8 2.5 1.6 1.4 2.0 IGT 1.2 1.0 1.5 0.8 IH & IL 1.0 0.6 0.4 0.5 0.2 Tj(°C) dV/dt (V/µs) 0.0 0.0 -40 -30 -20 -10 0 0.1 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. 1.0 10.0 100.0 Fig. 10: Relative variation of static dV/dt immunity versus junction temperature. dV/dt [Tj] / dV/dt [Tj = 125°C] (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] 8 8 7 7 6 6 5 5 4 4 3 3 2 2 VD=VR=400V 1 1 Tj(°C) 0 Tj(°C) 0 25 4/5 50 75 100 125 25 50 75 100 125 BTB04-600SL PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 M G1 E G Inches Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 F Millimeters Min. 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 OTHER INFORMATION Ordering type Marking Package Weight Base qty Packing mode BTB04-600SL BTB04-600SL TO-220AB 2.3 g 50 Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5