BTA/BTB10 Series ® 10A TRIACS SNUBBERLESS™ & STANDARD MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 10 A VDRM/VRRM 600 and 800 V IGT (Q1) 25 to 50 mA G A1 A2 DESCRIPTION Available either in standard or snubberless version, the BTA/BTB10 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ... The snubberless version (W suffix) is specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 V RMS) complying with UL standards (File ref.: E81734). A1 A2 G A1 A2 G TO-220AB Insulated (BTA10) TO-220AB (BTB10) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range April 2002 - Ed: 5A Value TO-220AB Tc = 105°C Unit A 10 TO-220AB Ins. Tc = 95°C F = 60 Hz t = 16.7 ms 105 F = 50 Hz t = 20 ms 100 tp = 10 ms A 55 A² s F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C + 100 1/6 BTA/BTB10 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ (3 Quadrants) Symbol IGT (1) Test Conditions VD = 12 V RL = 33 Ω VGD VD = VDRM RL = 3.3 kΩ IH (2) IT = 500 mA IL IG = 1.2 IGT VGT Quadrant Tj = 125°C BTA/BTB10 (dI/dt)c (2) ■ BW 35 50 Unit mA I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V MAX. 35 50 mA MAX. 50 70 mA 60 80 VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs Without snubber MIN. 5.5 9.0 A/ms I - III II dV/dt (2) CW Tj = 125°C STANDARD (4 Quadrants) Symbol IGT (1) Test Conditions VD = 12 V Quadrant RL = 33 Ω VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT RL = 3.3 kΩ 25 50 50 100 Unit ALL MAX. 1.3 V ALL MIN. 0.2 V Tj = 125°C MAX. I - III - IV VD = 67 %VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c = 4.4 A/ms B MAX. 25 MAX. Tj = 125°C mA 50 mA mA 40 50 80 100 MIN. 200 400 V/µs MIN. 5 10 V/µs II dV/dt (2) C I - II - III IV VGT VGD BTA/BTB10 STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 14 A Vto (2) tp = 380 µs Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 40 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2/6 Value Tj = 125°C MAX. BTA/BTB10 Series THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case (AC) Junction to ambient Rth(j-a) Value Unit TO-220AB 1.5 °C/W TO-220AB Insulated 2.4 TO-220AB °C/W 60 TO-220AB Insulated PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package X 50 mA Standard TO-220AB X X 50 mA Snubberless TO-220AB BTA/BTB10-xxxC X X 25 mA Standard TO-220AB BTA/BTB10-xxxCW X X 35 mA Snubberless TO-220AB 600 BW 600 V 800 V BTA/BTB10-xxxB X BTA/BTB10-xxxBW BTB: Non insulated TO-220AB package ORDERING INFORMATION BT A 10 - (RG) TRIAC SERIES INSULATION: A: insulated B: non insulated VOLTAGE: 600: 600V 800: 800V SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS PACKING MODE Blank: Bulk RG: Tube CURRENT: 10A OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA/BTB10-xxxyz BTA/BTB10xxxyz 2.3 g 250 Bulk BTA/BTB10-xxxyzRG BTA/BTB10-xxxyz 2.3 g 50 Tube Note: xxx = voltage, y = sensitivity, z = type 3/6 BTA/BTB10 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). P (W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IT(RMS) (A) IT(RMS) (A) 0 1 2 3 4 5 6 7 8 9 10 Fig. 3: Relative variation of thermal impedance versus pulse duration. 12 11 10 9 8 7 6 5 4 3 2 1 0 BTB BTA Tc(°C) 0 25 Fig. 4: values). 50 On-state 75 100 characteristics 125 (maximum ITM (A) K=[Zth/Rth] 100 1E+0 Tj max Tj max. Vto = 0.85 V Rd = 40 mW Zth(j-c) 1E-1 10 Zth(j-a) Tj=25°C tp (s) 1E-2 1E-3 1E-2 1E-1 1E+0 VTM (V) 1E+1 1E+2 5E+2 Fig. 5: Surge peak on-state current versus number of cycles. 1 0.5 4/6 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) ITSM (A) 110 100 90 80 70 60 50 40 30 20 10 0 1.0 1000 Tj initial=25°C t=20ms dI/dt limitation: 50A/µs One cycle Non repetitive Tj initial=25°C ITSM 100 I²t Repetitive Tc=95°C tp (ms) Number of cycles 1 10 100 1000 10 0.01 0.10 1.00 10.00 BTA/BTB10 Series Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.5 2.0 1.8 2.0 1.4 1.5 B 1.2 IH & IL 1.0 BW/CW 1.0 0.8 0.5 0.6 Tj(°C) 0.0 -40 C 1.6 IGT -20 0 20 40 60 80 100 120 140 0.4 0.1 (dV/dt)c (V/µs) 1.0 10.0 100.0 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 Tj (°C) 0 25 50 75 100 125 5/6 BTA/BTB10 Series PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B REF. C Millimeters Inches b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Typ. 15.20 Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6