UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. 1 TO-220F FEATURES * RDS(ON) = 1.0Ω @VGS = 10 V (7N60/7N60-R) RDS(ON) = 1.2Ω @VGS = 10 V (7N60-F/7N60-M/7N60-Q) * Ultra Low Gate Charge (Typical 29 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 16pF ) * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness TO-220 1 TO-220F1 1 TO-262 SYMBOL 1 TO-263 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-x-TA3-T 7N60G-x-TA3-T 7N60L-x-TF3-T 7N60G-x-TF3-T 7N60L-x-TF1-T 7N60G-x-TF1-T 7N60L-x-T2Q-T 7N60G-x-T2Q-T 7N60L-x-TQ2-R 7N60G-x-TQ2-R 7N60L-x-TQ2-T 7N60G-x-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube 1 of 6 QW-R502-076,Ja 7N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A Continuous ID 7.4 A Drain Current 29.6 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 530 mJ Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 142 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C 7N60-A 7N60-B THERMAL DATA PARAMETER TO-220/TO-262/TO-263 Junction to Ambient TO-220F/TO-220F1 TO-220/TO-262/TO-263 Junction to Case TO-220F/TO-220F1 SYMBOL θJA θJC RATINGS 62.5 62.5 0.88 2.6 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 7N60-A 7N60-B Drain-Source Leakage Current Gate- Source Leakage Current BVDSS TEST CONDITIONS VGS = 0V, ID = 250μA MIN TYP MAX UNIT 600 650 IDSS Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V I = 250μA, △BVDSS/△TJ D Referenced to 25°C VGS(TH) VDS = VGS, ID = 250μA RDS(ON) 7N60 7N60-F VGS = 10V, ID = 3.7A 7N60-M 7N60-Q 7N60-R CISS COSS CRSS VDS=25V, VGS=0V, f=1.0 MHz tD(ON) tR tD(OFF) tF VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 100 -100 0.67 2.0 16 V V μA nA nA V/°C 4.0 1.0 1.2 1.2 1.2 1.0 V Ω Ω Ω Ω Ω 1400 180 21 pF pF pF 70 170 140 130 ns ns ns ns 2 of 6 QW-R502-076,Ja 7N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, VGS=10 V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 29 7 14.5 38 nC nC nC 1.4 V 7.4 A 29.6 A 320 2.4 ns μC CLASSIFICATION OF RDS(ON) RANK VALUE 1.0Ω F 1.2Ω UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw M 1.2Ω Q 1.2Ω R 1.0Ω 3 of 6 QW-R502-076,Ja 7N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-076,Ja 7N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS RL VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Fig. 2A Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Fig. 2B Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-076,Ja 7N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-076,Ja