UNISONIC TECHNOLOGIES CO., LTD 14N50 Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 14N50 is ideally suitable for high efficiency switch mode power supply, power factor correction and electronic lamp ballast based on half bridge topology. FEATURES * RDS(ON) < 0.50Ω @ VGS = 10V, ID = 7A * Ultra low gate charge (typical 43nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 14N50L-TA3-T 14N50G-TA3-T 14N50L-TF1-T 14N50G-TF1-T 14N50L-TQ2-T 14N50G-TQ2-T 14N50L-TQ2-R 14N50G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel 1 of 7 QW-R502-720.E 14N50 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-720.E 14N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 14 A Pulsed Drain Current (Note 2) IDM 48 A Avalanche Current (Note 2) IAR 14 A Single Pulsed Avalanche Energy (Note 3) EAS 400 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 150 W Power Dissipation (TC=25°C) PD TO-220F1 50 W TO-263 150 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 9.3mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA TO-220 TO-220F1 TO-263 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 0.83 2.5 0.83 UNIT °C/W °C/W °C/W °C/W 3 of 7 QW-R502-720.E 14N50 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 1mA 500 V VDS = 500V, VGS = 0V 10 μA VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage Current IGSS -100 nA VGS = -20V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C 0.5 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 100μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 7A 0.50 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 2000 pF VDS=25V, VGS=0V, Output Capacitance COSS 238 pF f=1.0MHz 55 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 69 92 nC VDS=400V, ID=12A, Gate-Source Charge QGS 12 nC VGS=10 V (Note 1,2) 31 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 24 nS Turn-On Rise Time tR 70 nS VDD =250V, ID =14A, RG =25Ω (Note 1,2) Turn-Off Delay Time tD(OFF) 54 nS Turn-Off Fall Time tF 50 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 14A 1.6 V Maximum Continuous Drain-Source Diode IS 14 A Forward Current Maximum Pulsed Drain-Source Diode ISM 56 A Forward Current Reverse Recovery Time trr 470 nS VGS = 0V, IS = 14A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge QRR 3.1 μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-720.E 14N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-720.E 14N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-720.E 14N50 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-720.E