STMICROELECTRONICS ESDALC6V1P5

ESDALC6V1P5
®
QUAD LOW CAPACITANCE TRANSIL™
ARRAY FOR ESD PROTECTION
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
Printers
Communication systems and cellular phones
Video equipment
This device is particularly adapted to the protection
of symmetrical signals.
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FEATURES
4 UNIDIRECTIONAL TRANSIL™ FUNCTIONS.
BREAKDOWN VOLTAGE VBR = 6.1V MIN.
LOW DIODE CAPACITANCE (12pF @ 0V)
LOW LEAKAGE CURRENT < 100 nA
VERY SMALL PCB AREA < 2.6 mm2
SOT665
(Jedec SC89-5L)
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FUNCTIONAL DIAGRAM
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DESCRIPTION
The ESDALC6V1P5 is a monolithic array designed
to protect up to 4 lines against ESD transients.
This device is ideal for applications where both
reduced line capacitance and board space saving
are required.
BENEFITS
High ESD protection level.
High integration.
Suitable for high density boards.
1
5
2
3
4
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ESD response to IEC61000-4-2 level 4 (15kV
contact)
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COMPLIES WITH THE FOLLOWING STANDARDS :
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IEC61000-4-2 level 4: 15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
February 2004 - Ed: 1
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ESDALC6V1P5
ABSOLUTE RATINGS (Tamb = 25°C)
Symbol
Parameter
Test conditions
VPP
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
PPP
Peak pulse power (8/20 µs) (see note 1)
Tj
Value
Unit
± 15
±8
kV
30
W
125
°C
- 55 to + 150
°C
260
°C
- 40 to + 125
°C
Tj initial = Tamb
Junction temperature
Tstg
Storage temperature range
TL
Maximum lead temperature for soldering during 10s at N/A
Top
Operating temperature range
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient on printed circuit on recommended pad layout
220
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
αT
Voltage tempature coefficient
VF
Forward voltage drop
C
Capacitance per line
Rd
Dynamic resistance
VBR
min.
I
IF
VF
VCL VBR
VRM
V
IRM
Slope: 1/Rd
@
IR
max.
IRM
@
VRM
max.
IPP
Rd
αT
C
typ.
max.
typ.
Types
@ 0V
ESDALC6V1P5
2/5
V
V
mA
µA
V
Ω
10-4/°C
pF
6.1
7.2
1
0.1
3
1.5
4.5
12
ESDALC6V1P5
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
Fig. 2: Peak pulse power versus exponential pulse
duration.
PPP[Tj initial] / PPP[Tj initial=25°C)
PPP(W)
1.1
1000
Tj initial=25°C
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
Tp(µs)
Tj(°C)
0.0
10
0
25
50
75
100
125
150
Fig. 3: Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
1
10
100
Fig. 4: Forward voltage drop versus peak forward
current (typical values).
IFM(A)
IPP(A)
1.E+00
100.0
tp=2.5µs
Tj initial=25°C
Tj=125°C
10.0
1.E-01
1.0
1.E-02
Tj=25°C
VCL(V)
VFM(V)
1.E-03
0.1
0
10
20
30
40
50
60
0.0
70
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Fig. 6: Relative variation of leakage current versus
junction temperature (typical values).
C(pF)
IR[Tj] / IR[Tj=25°C]
13
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
12
11
VR=3V
10
9
100
8
7
6
5
10
4
3
2
1
VR(V)
Tj(°C)
1
0
0
1
2
3
4
5
6
25
50
75
100
125
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ESDALC6V1P5
ORDER CODE
ESDA LC 6V1 P5
ESD ARRAY
PACKAGE: SOT665
VBR min
LOW CAPACITANCE
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
ESDALC6V1P5
A1
SOT665
2.9 mg.
3000
Tape & reel
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ESDALC6V1P5
PACKAGE MECHANICAL DATA
SOT-665
DIMENSIONS
REF.
bp
D
E
A
Lp
U
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.50
0.60
0.020
0.024
bp
0.17
0.27
0.007
0.011
c
0.08
0.18
0.003
0.007
D
1.50
1.70
0.060
0.067
E
1.10
1.30
0.043
0.051
He
e1
e
e
1.00
0.040
e1
0.50
0.020
He
1.50
1.70
0.059
0.067
Lp
0.10
0.30
0.004
0.012
FOOT PRINT (in millimeters)
0.43
2.75
1.16
0.5
0.3
REEL ORIENTATION
A1
A1
A1
A1
A1
A1
A1
A1
A1
A1
A1
A1
A1
A1
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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