ESDALC6V1P5 ® QUAD LOW CAPACITANCE TRANSIL™ ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D. MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers Communication systems and cellular phones Video equipment This device is particularly adapted to the protection of symmetrical signals. ■ ■ ■ ■ FEATURES 4 UNIDIRECTIONAL TRANSIL™ FUNCTIONS. BREAKDOWN VOLTAGE VBR = 6.1V MIN. LOW DIODE CAPACITANCE (12pF @ 0V) LOW LEAKAGE CURRENT < 100 nA VERY SMALL PCB AREA < 2.6 mm2 SOT665 (Jedec SC89-5L) ■ ■ ■ FUNCTIONAL DIAGRAM ■ ■ DESCRIPTION The ESDALC6V1P5 is a monolithic array designed to protect up to 4 lines against ESD transients. This device is ideal for applications where both reduced line capacitance and board space saving are required. BENEFITS High ESD protection level. High integration. Suitable for high density boards. 1 5 2 3 4 ■ ■ ESD response to IEC61000-4-2 level 4 (15kV contact) ■ COMPLIES WITH THE FOLLOWING STANDARDS : ■ ■ IEC61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883E-Method 3015-7: class 3 25kV HBM (Human Body Model) February 2004 - Ed: 1 1/5 ESDALC6V1P5 ABSOLUTE RATINGS (Tamb = 25°C) Symbol Parameter Test conditions VPP ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge PPP Peak pulse power (8/20 µs) (see note 1) Tj Value Unit ± 15 ±8 kV 30 W 125 °C - 55 to + 150 °C 260 °C - 40 to + 125 °C Tj initial = Tamb Junction temperature Tstg Storage temperature range TL Maximum lead temperature for soldering during 10s at N/A Top Operating temperature range Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 220 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage tempature coefficient VF Forward voltage drop C Capacitance per line Rd Dynamic resistance VBR min. I IF VF VCL VBR VRM V IRM Slope: 1/Rd @ IR max. IRM @ VRM max. IPP Rd αT C typ. max. typ. Types @ 0V ESDALC6V1P5 2/5 V V mA µA V Ω 10-4/°C pF 6.1 7.2 1 0.1 3 1.5 4.5 12 ESDALC6V1P5 Fig. 1: Relative variation of peak pulse power versus initial junction temperature. Fig. 2: Peak pulse power versus exponential pulse duration. PPP[Tj initial] / PPP[Tj initial=25°C) PPP(W) 1.1 1000 Tj initial=25°C 1.0 0.9 0.8 0.7 0.6 100 0.5 0.4 0.3 0.2 0.1 Tp(µs) Tj(°C) 0.0 10 0 25 50 75 100 125 150 Fig. 3: Clamping voltage versus peak pulse current (typical values, rectangular waveform). 1 10 100 Fig. 4: Forward voltage drop versus peak forward current (typical values). IFM(A) IPP(A) 1.E+00 100.0 tp=2.5µs Tj initial=25°C Tj=125°C 10.0 1.E-01 1.0 1.E-02 Tj=25°C VCL(V) VFM(V) 1.E-03 0.1 0 10 20 30 40 50 60 0.0 70 Fig. 5: Junction capacitance versus reverse voltage applied (typical values). 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 6: Relative variation of leakage current versus junction temperature (typical values). C(pF) IR[Tj] / IR[Tj=25°C] 13 1000 F=1MHz VOSC=30mVRMS Tj=25°C 12 11 VR=3V 10 9 100 8 7 6 5 10 4 3 2 1 VR(V) Tj(°C) 1 0 0 1 2 3 4 5 6 25 50 75 100 125 3/5 ESDALC6V1P5 ORDER CODE ESDA LC 6V1 P5 ESD ARRAY PACKAGE: SOT665 VBR min LOW CAPACITANCE Ordering type Marking Package Weight Base qty Delivery mode ESDALC6V1P5 A1 SOT665 2.9 mg. 3000 Tape & reel 4/5 ESDALC6V1P5 PACKAGE MECHANICAL DATA SOT-665 DIMENSIONS REF. bp D E A Lp U Millimeters Inches Min. Max. Min. Max. A 0.50 0.60 0.020 0.024 bp 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 D 1.50 1.70 0.060 0.067 E 1.10 1.30 0.043 0.051 He e1 e e 1.00 0.040 e1 0.50 0.020 He 1.50 1.70 0.059 0.067 Lp 0.10 0.30 0.004 0.012 FOOT PRINT (in millimeters) 0.43 2.75 1.16 0.5 0.3 REEL ORIENTATION A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics - All rights reserved. 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