ESDALC6V1xxM6 4 and 5 line low capacitance TRANSIL™ array for ESD protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: ■ Computers ■ Printers ■ Communication systems ■ Cellular phone handsets and accessories ■ Video equipment Micro QFN Package Functional diagram ESDALC6V1M6 Features ■ 4 unidirectional TRANSIL diodes (ESDALC6V1M6) ■ 5 unidirectional TRANSIL diodes (ESDALC6V1-5M6) ■ Breakdown Voltage VBR = 6.1 V min ■ Low diode capacitance (12 pF typ at 0 V) ■ Low leakage current < 70 nA ■ Very small PCB area: 1.45 mm² ■ ■ I/O1 1 6 I/O5 GND 2 5 GND I/O2 4 I/O3 3 ESDALC6V1-5M6 I/O1 1 6 I/O5 500 microns pitch GND 2 5 I/O4 Leadfree package I/O2 4 I/O3 3 Description The ESDALC6V1xxM6 is monolithic arrays designed to protect up to 4 or 5 lines against ESD transients. The device is ideal for applications where both reduced print circuit board space and power absorption capability are required. Order Code Part number Marking ESDALC6V1M6 G ESDALC6V1-5M6 H Complies with the following standards: Benefits IEC61000-4-2 ■ High ESD protection level 15 kV (air discharge) ■ High integration 8 kV (contact discharge) ■ Suitable for high density boards MIL STD 883E- Method 3015-7: class3 25 kV (human body model) TM: TRANSIL is a trademark of STMicroelectronics January 2006 Rev 3 1/8 www.st.com 8 ESDALC6V1xxM6 1 Characteristics 1 Characteristics 1.1 Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter VPP ESD discharge – IEC61000-4-2 air discharge IEC61000-4-2 contact discharge PPP Peak pulse power dissipation (8/20 µs)(1) Ipp Repetitive peak pulse current typical value (8/20 µs) Tj Junction temperature Tstg TL TOP Tj initial = Tamb Storage temperature range Maximum lead temperature for soldering during 10 s Operating temperature range Value Unit ± 15 ±8 kV 30 W 3 A 125 °C -55 + 150 °C 260 °C -40 + 125 °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit. 1.2 Electrical characteristics (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IF VF VCL VBR VRM IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop V I RM IR Slope= 1/ Rd I PP Parameter Test Condition Min Max Unit VBR IR = 1 mA 6.1 7.2 V IRM VRM = 3 V 70 nA VF IF = 10 mA 1 V 3 Ω 5 10-4/°C 15 pF Rd Typ 2 αT(1) IR = 1 mA, C VR =0 V DC, F = 1 MHz, Vosc = 30 mVRMS 1. ∆VBR = αT * (Tamb - 25 °C) * VBR (25 °C) 2/8 I 12 ESDALC6V1xxM6 Figure 1. 1 Characteristics Relative variation of peak pulse power versus initial junction temperature Figure 2. Peak pulse power versus exponential pulse duration PPP(W) 1000 PPP [Tj i n iti al ] /PPP [Tj i n iti al = 2 5 °C] Tj initial = 25°C 1.1 1.0 0.9 0.8 0.7 0.6 100 0.5 0.4 0.3 0.2 0.1 T j (°C) 0.0 0 25 50 75 100 125 150 tP(µs) 10 1 Figure 3. 10 Clamping voltage versus peak pulse Figure 4. current (typical values, rectangular waveform) 100 Forward voltage drop versus peak forward current (typical values) IPP(A) 100.0 IF M(A) 8/20µs Tj initial =25°C 1.E+00 10.0 1.E-01 Tj =125°C Tj =25°C 1.E-02 1.0 V FM (V) 1.E-03 VCL(V) 0.0 0.1 0 10 Figure 5. 20 30 40 50 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 70 Junction capacitance vesus reverse Figure 6. voltage applied (typical values) Relative variation of leakage current versus junction temperature (typical values) C(pF) 14 13 12 IR [Tj] / IR [Tj= 2 5 °C ] F=1MHz VOSC=30mVRMS Tj=25°C 100 VR =3V 11 10 9 8 7 6 5 4 3 10 2 1 0 T j (°C) VR(V) 1 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50 75 100 125 5.0 3/8 ESDALC6V1xxM6 1 Characteristics Figure 7. S21 attenuation measurement results of each channel Figure 8. Analog crosstalk measurements between channels dB dB 0.00 0.00 -10.00 -30.00 -20.00 -60.00 -30.00 -90.00 f/Hz -40.00 100.0k Figure 9. f/Hz -120.00 1.0M 10.0M 100.0M 1.0G ESD response to IEC6100-4-2 (+15 kV air discharge) on each channel 100.0k 1.0M 10.0M 1.0G Figure 10. ESD response to IEC6100-4-2 (-15 kV air discharge) on each channel 36V -34V 4/8 100.0M ESDALC6V1xxM6 2 2 Ordering information scheme Ordering information scheme ESDA LC 6V1 xx M6 ESD Array Low capacitance Breakdown voltage 6V1 = 6.1 Volts min Number of lines blank = 4 line -5 = 5 line protection Package M6 = Micro QFN 6 leads 3 Package information Table 1. Mechanical data DIMENSIONS REF D Millimeters Min Typ E 1 2 A A1 1 2 L k b e Inches Max Min Typ Max A 0.50 0.55 0.60 0.20 0.22 0.24 A1 0.00 0.02 0.05 0.00 0.01 0.02 b 0.19 0.25 0.30 0.07 0.10 0.12 D 1.34 1.45 1.51 0.53 0.57 0.59 E 0.94 1.00 1.05 0.37 0.39 0.41 e 0.45 0.50 0.55 0.18 0.20 0.22 k 0.25 0.30 0.35 0.10 0.12 0.14 L 0.30 0.35 0.40 0.12 0.14 0.16 5/8 ESDALC6V1xxM6 3 Package information Figure 11. Footprint 0.25 0.50 0.65 0.30 1.60 Measurements in mm Figure 12. Tape and reel specification Dot identifying Pin A1 location φ 1.5 +/- 0.1 4.00+/-0.1 1.75 +/- 0.1 2.0+/-0.05 3.5 +/- 0.03 1.65 8.0 +/- 0.3 0.75 X X 1.20 X: Marking X 4.00 User direction of unreeling In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 ESDALC6V1xxM6 4 5 4 Ordering information Ordering information Part number Marking Package Weight Base qty Delivery mode ESDALC6V1M6 G Micro QFN 2.2 mg 30,000 Tape and reel ESDALC6V1-5M6 H Micro QFN 2.2 mg 30,000 Tape and reel Revision history Date Revision Changes 19-Sep-2005 1 Initial release. 10-Oct-2005 2 Package title changed from DFN to QFN. No technical changes. 21-Dec-2005 3 Updated package dimensions in Table 1 7/8 ESDALC6V1xxM6 5 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8