ESDA25W5 ® QUAL TRANSIL ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D. MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : n Computers n Printers n Communication systems n Cellular phones handsets and accessories n Other telephone sets n Set top boxes FEATURES n n n n n 4 unidirectional TRANSIL functions. 150W peak pulse power (8/20µs) Breakdown voltage : VBR = 25V min. Low leakage current : < 1µA. Very low PCB space consuming : 4.2 mm2 typically. SOT323-5L FUNCTIONAL DIAGRAM DESCRIPTION The ESDA25W5 is a 4-bit wide monolithic suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients. 1 5 2 3 4 BENEFITS n n n High ESD protection level : up to 25 kV. High integration. Suitable for high density boards. COMPLIES WITH THE FOLLOWING STANDARDS : n n IEC61000-4-2 level 4 MIL STD 883C-Method 3015-6 : class 3. (human body model) March 2000 - Ed: 1A 1/5 ESDA25W5 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Test conditions Value Unit MIL STD 883C - Method 3015-6 IEC61000-4-2, air discharge IEC61000-4-2, contact discharge 25 16 9 kV 150 W - 40 to + 85 °C 150 °C - 55 to + 150 °C 260 °C VPP ESD discharge PPP Peak pulse power (8/20 µs) Top Operating temperature range Tj Note 1 Junction temperature Tstg Storage temperature range TL Lead solder temperature (10 secondes duration) Note 1: The evolution of the operating parameters versus temperature is given trough curves and αT parameter ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter I VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient C Capacitance per line Rd Dynamic resistance VF Forward voltage drop VCL VBR VRM slope : 1 / R d Types VBR min. ESDA25W5 IR @ max. IRM @ VRM max. IPP Rd αT C typ. max. typ. note 2 note 3 0V bias VF @ IF max. V V mA µA V Ω 10 / °C pF V mA 25 30 1 1 24 1.9 10 30 1.2 10 note 2 : Square pulse Ipp = 15A, tp=2.5µs. note 3 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C) 2/5 V IRM IR -4 ESDA25W5 Fig. 1: Peak pulse power dissipation versus initial junction temperature Fig. 2: Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) Ppp [Tj initial] / Ppp [Tj initial=25°C] Ppp(W) 1.1 1000 1.0 0.9 0.8 0.7 0.6 100 0.5 0.4 0.3 0.2 0.1 0.0 tp(µs) Tj initial (°C) 0 25 50 75 100 125 150 Fig. 3: Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs. 10 1 100 Fig. 4: Capacitance versus reverse applied voltage (typical values). C(pF) Ipp(A) 100.0 10 100 tp=2.5µs F=1MHz Vosc=30mV 10.0 10 1.0 Vcl(V) 0.1 25 30 35 40 45 VR(V) 50 55 60 65 70 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). 1 1 10 100 Fig. 6: Peak forward voltage drop versus peak forward current (typical values). IFM(A) IR[Tj] / IR[Tj=25°C] 1E-4 100 Tj=25°C 3E-5 1E-5 3E-6 1E-6 10 3E-7 1E-7 3E-8 Tj(°C) 1 25 50 75 100 125 150 1E-8 0.0 VFM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3/5 ESDA25W5 ORDER CODE ESDA 25 W5 ESD ARRAY Package: SOT323-5L VBR min Ordering type Marking Package Weight Base qty Delivery mode ESDA25W5 E25 SOT323-5L 5.4 mg. 3000 Tape & reel PACKAGE MECHANICAL DATA SOT323-5L DIMENSIONS REF. A A2 A1 D e H c Inches Min. Max. Min. Max. A 0.8 1.1 0.031 0.043 A1 0 0.1 0 0.004 A2 0.8 1 0.031 0.039 b 0.15 0.3 0.006 0.012 c 0.1 0.18 0.004 0.007 D 1.8 2.2 0.071 0.086 E 1.15 1.35 0.045 0.053 e E Q1 Millimeters e 0.65 Typ. 0.026 Typ. H 1.8 2.4 0.071 0.094 Q1 0.1 0.4 0.004 0.016 b FOOT PRINT (in millimeters) Mechanical specifications 0.3mm 1mm 29mm 1mm 0.35mm 4/5 Lead plating Tin-lead Lead plating thickness 5µm min. 25 µm max. Lead material Sn / Pb (70% to 90% Sn) Lead coplanarity 10µm max. Body material Molded epoxy Epoxy meets UL94,V0 ESDA25W5 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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