STMICROELECTRONICS ESDA25W5

ESDA25W5
®
QUAL TRANSIL ARRAY
FOR ESD PROTECTION
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
n Computers
n Printers
n Communication systems
n Cellular phones handsets and accessories
n Other telephone sets
n Set top boxes
FEATURES
n
n
n
n
n
4 unidirectional TRANSIL functions.
150W peak pulse power (8/20µs)
Breakdown voltage : VBR = 25V min.
Low leakage current : < 1µA.
Very low PCB space consuming : 4.2 mm2 typically.
SOT323-5L
FUNCTIONAL DIAGRAM
DESCRIPTION
The ESDA25W5 is a 4-bit wide monolithic
suppressor designed to protect components
which are connected to data and transmission
lines against ESD.
It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients.
1
5
2
3
4
BENEFITS
n
n
n
High ESD protection level : up to 25 kV.
High integration.
Suitable for high density boards.
COMPLIES WITH THE FOLLOWING STANDARDS :
n
n
IEC61000-4-2 level 4
MIL STD 883C-Method 3015-6 : class 3.
(human body model)
March 2000 - Ed: 1A
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ESDA25W5
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Test conditions
Value
Unit
MIL STD 883C - Method 3015-6
IEC61000-4-2, air discharge
IEC61000-4-2, contact discharge
25
16
9
kV
150
W
- 40 to + 85
°C
150
°C
- 55 to + 150
°C
260
°C
VPP
ESD discharge
PPP
Peak pulse power (8/20 µs)
Top
Operating temperature range
Tj
Note 1
Junction temperature
Tstg
Storage temperature range
TL
Lead solder temperature (10 secondes duration)
Note 1: The evolution of the operating parameters versus temperature is given trough curves and αT parameter
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
I
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
αT
Voltage temperature coefficient
C
Capacitance per line
Rd
Dynamic resistance
VF
Forward voltage drop
VCL VBR
VRM
slope : 1 / R d
Types
VBR
min.
ESDA25W5
IR
@
max.
IRM
@
VRM
max.
IPP
Rd
αT
C
typ.
max.
typ.
note 2
note 3
0V bias
VF @
IF
max.
V
V
mA
µA
V
Ω
10 / °C
pF
V
mA
25
30
1
1
24
1.9
10
30
1.2
10
note 2 : Square pulse Ipp = 15A, tp=2.5µs.
note 3 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C)
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V
IRM
IR
-4
ESDA25W5
Fig. 1: Peak pulse power dissipation versus initial
junction temperature
Fig. 2: Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C)
Ppp [Tj initial] / Ppp [Tj initial=25°C]
Ppp(W)
1.1
1000
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
0.0
tp(µs)
Tj initial (°C)
0
25
50
75
100
125
150
Fig. 3: Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 µs.
10
1
100
Fig. 4: Capacitance versus reverse applied
voltage (typical values).
C(pF)
Ipp(A)
100.0
10
100
tp=2.5µs
F=1MHz
Vosc=30mV
10.0
10
1.0
Vcl(V)
0.1
25
30
35
40
45
VR(V)
50
55
60
65
70
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
1
1
10
100
Fig. 6: Peak forward voltage drop versus peak
forward current (typical values).
IFM(A)
IR[Tj] / IR[Tj=25°C]
1E-4
100
Tj=25°C
3E-5
1E-5
3E-6
1E-6
10
3E-7
1E-7
3E-8
Tj(°C)
1
25
50
75
100
125
150
1E-8
0.0
VFM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
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ESDA25W5
ORDER CODE
ESDA
25
W5
ESD ARRAY
Package: SOT323-5L
VBR min
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
ESDA25W5
E25
SOT323-5L
5.4 mg.
3000
Tape & reel
PACKAGE MECHANICAL DATA
SOT323-5L
DIMENSIONS
REF.
A
A2
A1
D
e
H
c
Inches
Min.
Max.
Min.
Max.
A
0.8
1.1
0.031
0.043
A1
0
0.1
0
0.004
A2
0.8
1
0.031
0.039
b
0.15
0.3
0.006
0.012
c
0.1
0.18
0.004
0.007
D
1.8
2.2
0.071
0.086
E
1.15
1.35
0.045
0.053
e
E
Q1
Millimeters
e
0.65 Typ.
0.026 Typ.
H
1.8
2.4
0.071
0.094
Q1
0.1
0.4
0.004
0.016
b
FOOT PRINT (in millimeters)
Mechanical specifications
0.3mm
1mm
29mm
1mm
0.35mm
4/5
Lead plating
Tin-lead
Lead plating thickness
5µm min.
25 µm max.
Lead material
Sn / Pb
(70% to 90% Sn)
Lead coplanarity
10µm max.
Body material
Molded epoxy
Epoxy meets
UL94,V0
ESDA25W5
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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