HCF40109B QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER ■ ■ ■ ■ ■ ■ ■ ■ ■ INDIPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS - VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED BOTH VCC AND VDD UP AND DOWN LEVEL SHIFTING CAPABILITY THREE-STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V, AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40109B contains four low-to-high voltage level shifting circuits. Each circuit will shift a low-voltage digital-logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = V SS to a higher voltage output signal (E, F, G, H) with logical 1 = VDD and logical 0 = VSS. HCF40109B, unlike other DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF40109BEY HCF40109BM1 HCF40109M013TR low-to-high level-shifting circuits, does not require the presence of the high voltage supply (VDD) before the application of either the low-voltage supply (VCC) or the input signals. There are no restrictions on the sequence of application of VDD, VCC, or the input signals. In addition, there are no restrictions on the relative magnitudes of the supply voltages or input signals within the device maximum ratings; VCC may exceed VDD, and input signals may exceed VCC and VDD. When operated in the mode VCC VDD, HCF40109B will operate as a high-to-low level-shifter. HCF40109B also features individual three-state output capability. A low level on any of the separately enabled three-state output controls produces a high-impedance state in the corresponding output. PIN CONNECTION September 2002 1/9 HCF40109B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 3, 6, 10, 14 4, 5, 11, 13 1 A, B, C, D E, F, G, H ENABLE A, B, C, D NC VCC 8 VSS Negative Supply Voltage 16 VDD Positive Supply Voltage 2, 7, 9, 15 12 NAME AND FUNCTION Low Input Voltage High Input Voltage Enable Input Not Connected Low Supply Voltage TRUTH TABLE INPUTS MODE A, B, C, D Low to High Level Shift X : Don’t Care Z : High Impedance FUNCTIONAL DIAGRAM 2/9 L H X OUTPUT Enable A, B, C, D H H L E, F, G, H L H Z HCF40109B LOGIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage VI DC Input Voltage II DC Input Current Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 V mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C PD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C 3/9 HCF40109B DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL IOH IOL II CI Parameter Quiescent Current High Level Output Voltage Low Level Output Voltage VI (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Input Voltage Low Level Input Voltage Output Drive Current Output Sink Current Input Leakage Current Input Capacitance VO (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 Value |IO| VDD (µA) (V) <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 Any Input Any Input 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 18 TA = 25°C Min. Typ. Max. 0.02 0.02 0.02 0.04 1 2 4 20 4.95 9.95 14.95 -40 to 85°C -55 to 125°C Min. Min. 30 60 120 600 4.95 9.95 14.95 0.05 0.05 0.05 4.95 9.95 14.95 3.5 7 11 1.5 3 4 -3.2 -1 -2.6 -6.8 1 2.6 6.8 ±0.1 5 7.5 0.05 0.05 0.05 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V 4/9 V V 1.5 3 4 ±1 µA V 3.5 7 11 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 ±10-5 Max. 30 60 120 600 0.05 0.05 0.05 3.5 7 11 -1.53 -0.52 -1.3 -3.6 0.52 1.3 3.6 Max. Unit V mA mA ±1 µA pF HCF40109B DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) Test Condition Symbol Parameter tPHL tPLH Propagation Delay Time : (Data input to output) High to Low Level Low to High Level tPHZ tPZH tPLZ tPZL 3-State Disable DelayTime Output High to High Impedance High Impedance to Output High Output Low to High Impedance High Impedance to Output Low tTHL,tTLH Transition Time VCC (V) VDD (V) 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 10 15 15 5 5 10 Value (*) SHITFING MODE L-H H-L L-H H-L L-H H-L L-H H-L L-H H-L L-H H-L L-H H-L Min. Unit Typ. Max. 300 220 180 850 850 290 130 120 70 230 230 80 60 50 35 120 120 40 320 230 180 800 800 280 370 300 250 850 850 350 100 80 40 120 120 40 50 40 40 100 100 50 600 440 360 1600 1600 580 260 240 140 460 460 160 120 100 70 240 240 80 640 460 360 1500 1500 560 740 600 500 1600 1600 700 200 160 80 240 240 80 100 80 80 200 200 100 ns ns ns ns ns ns ns 5/9 HCF40109B TEST CIRCUIT TEST SWITCH tPLH, tPHL Open tPZL, tPLZ VDD tPZH, tPHZ VSS CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 6/9 HCF40109B Plastic DIP-16 (0.25) MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 0.77 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L Z 3.3 0.130 1.27 0.050 P001C 7/9 HCF40109B SO-16 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45˚ (typ.) D 9.8 E 5.8 10 0.385 6.2 0.228 0.393 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.62 0.024 8 ˚ (max.) PO13H 8/9 HCF40109B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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