HCF4512B 8 CHANNEL DATA SELECTOR ■ ■ ■ ■ ■ ■ ■ 3-STATE OUTPUT STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF4512B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF4512BEY HCF4512BM1 HCF4512M013TR HCF4512B is an 8-channel data selector featuring a three-state output that can interface directly with, and drive, data lines of bus oriented systems. PIN CONNECTION October 2002 1/9 HCF4512B IINPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 2, 3, 4, 5, 6, 7, 9 11, 12, 13 10 SYMBOL NAME AND FUNCTION D0 to D7 Channel Inputs Select Control Inhibit Output 8 A, B, C INHIBIT 3-STATE DISABLE SEL OUTPUT VSS 16 VDD 15 14 3 State Disable Output Select Output Negative Supply Voltage Positive Supply Voltage FUNCTIONAL DIAGRAM TRUTH TABLE SELECT CONTROL A B C L H L H L H L H X X L L H H L L H H X X L L L L H H H H X X X : Don’t Care Z : High Impedance 2/9 INHIBIT 3-STATE DISABLE SELECT OUTPUT L L L L L L L L H X L L L L L L L L L H D0 D1 D2 D3 D4 D5 D6 D7 0 Z HCF4512B LOGIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage Value Unit -0.5 to +22 V VI DC Input Voltage -0.5 to VDD + 0.5 V II DC Input Current ± 10 mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C PD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C 3/9 HCF4512B DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL IOH IOL II IOZ CI Parameter Quiescent Current High Level Output Voltage Low Level Output Voltage VI (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Input Voltage Low Level Input Voltage Output Drive Current Output Sink Current Input Leakage Current 3-State Output Leakage Current Input Capacitance VO (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 Value |IO| VDD (µA) (V) <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 TA = 25°C Min. Typ. Max. 0.04 0.04 0.04 0.08 5 10 20 100 4.95 9.95 14.95 -40 to 85°C -55 to 125°C Min. Min. 150 300 600 3000 4.95 9.95 14.95 0.05 0.05 0.05 4.95 9.95 14.95 3.5 7 11 1.5 3 4 -3.2 -1 -2.6 -6.8 1 2.6 6.8 3.5 7 11 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 µA V 0.05 0.05 0.05 V V 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 V mA mA 0/18 Any Input 18 ±10-5 ±0.1 ±1 ±1 µA 0/18 0/18 18 ±10-4 ±0.4 ±12 ±12 µA 5 7.5 Any Input The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V 4/9 Max. 150 300 600 3000 0.05 0.05 0.05 3.5 7 11 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 Max. Unit pF HCF4512B DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) Test Condition Symbol Parameter tPHL tPLH Propagation Delay Time Inhibit to Output tPHL tPLH Propagation Delay Time "A" select to Output tPHL tPLH Propagation Delay Time Data to Output tPZL tPLZ 3-State Disable Delay tPHZ tPZH Time tTHL tTLH Transition Time VDD (V) 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 Value (*) Min. Unit Typ. Max. 140 70 50 200 85 60 180 75 55 60 30 20 100 50 40 280 140 100 400 170 120 360 150 110 120 60 40 200 100 80 ns ns ns ns ns (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. TEST CIRCUIT TEST SWITCH tPLH, tPHL Open tPZL, tPLZ VDD tPZH, tPHZ VSS CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) 5/9 HCF4512B WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle) 6/9 HCF4512B Plastic DIP-16 (0.25) MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 0.77 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L Z 3.3 0.130 1.27 0.050 P001C 7/9 HCF4512B SO-16 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45˚ (typ.) D 9.8 E 5.8 10 0.385 6.2 0.228 0.393 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.62 0.024 8 ˚ (max.) PO13H 8/9 HCF4512B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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