ITA6V5B3 / ITA10B3 ITA18B3 / ITA25B3 Application Specific Discretes A.S.D.TM BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION APPLICATIONS Differential data transmission lines protection : - RS-232 - RS-423 - RS-422 - RS-485 FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY IPP = 40 A (8/20µs) PEAK PULSE POWER : 300 W (8/20µs) SEPARATED INPUT-OUTPUT UP TO 9 BIDIRECTIONAL TRANSIL FUNCTIONS LOW CLAMPING FACTOR (VCL / VBR) AT HIGH CURRENT LEVEL LOW LEAKAGE CURRENT ESD PROTECTION UP TO 15kV SO20 FUNCTIONAL DIAGRAM DESCRIPTION Transil diode arrays provide high overvoltage protectionby clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. The ITA series allies high surge capability against energetic pulses with high voltage performance against ESD. The separated input/output configuration of the device ensures improved protection against very fast transient overvoltage like ESD by elimination of the spikes induced by parasitic inductances created by external wiring. COMPLIESWITHTHE FOLLOWINGSTANDARDS : IEC 1000-4-2 : level 4 IEC 1000-4-4 : level 4 IEC 1000-4-5 : level 2 MIL STD 883C - Method 3015-6 : class 3 (human body model) January 1998 Ed: 2 1/6 ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Unit PPP Peak pulse power dissipation (8/20µs) (see note 1) Tj initial = Tamb 300 W IPP Peak pulse current (8/20µs) (see note 1) Tj initial = Tamb 40 A I2 t Wire I2t value (see note 1) 0.6 A2s - 55 to + 150 125 °C °C 260 °C Tstg Tj Storage temperature range Maximum operating junction temperature TL Maximum lead temperature for soldering during 10s Note 1 : For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting. %I pp 8 s 100 Pulse wave form 8/20 s 50 0 t 20 s ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient C Types Junction capacitance IRM @ VRM max. VBR @ IR VCL min. note 2 @ IPP VCL 8/20µs max. note 2 @ IPP αT C 8/20µs max. max. -4 note 2 note 3 µA V V mA V A V A 10 /°C pF ITA6V5B3 10 5 6.5 1 9.5 10 11 25 4 1100 ITA10B3 4 8 10 1 13 10 17 25 8 800 ITA18B3 4 15 18 1 21 10 26 25 9 500 ITA25B3 4 24 25 1 31 10 36 25 12 420 Note 2 : Between I/O pin and ground. Note 3 : Between two input Pins at 0V Bias. Preferred types in bold. 2/6 ITA6V5B3 / ITA10B3 / ITA18B3 /ITA25B3 Fig. 1 : Typical peak pulse power versus exponential pulse duration. 1E+04 Fig. 2 : Clamping voltage versus peak pulse current (exponential waveform 8/20 µs). P P P (W) ITA25B3 ITA18B3 ITA6V5B3 ITA10B3 T j initial = 25 oC 1E+03 1E+02 1E+01 1E-03 t P (ms) expo 1E-02 1E-01 1E+00 1E+01 1E+02 Fig. 3 : Peak current IDC inducing open circuit of the wire for one input/output versus pulse duration (typical values). 1E+03 Fig. 4 : Junction capacitance versus reverse applied voltage for one input/output (typical values). I DC (A) expon ential waveform 1E+02 1E+01 t (ms) 1E+00 1E-02 1E-01 1E+00 1E+01 Fig. 5 : Relative variation of leakage current versus junction temperature 3/6 ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3 APPLICATION INFORMATION Types Maximum differential voltage between two input pins at 25°C ITA6V5B3 + / - 3.5 V ITA10B3 + / - 5.0 V ITA18B3 + / - 9.0 V ITA25B3 + / - 12.5 V This monolithic Transil Array is based on 10 unidirectionalTransils with a commoncathode and can be configurated to offer up to 9 bidirectional functions. This imposes a maximum differential voltage between 2 input pins (see opposite table). Typical application : RS232 junction. TX RX RTS CTS DTR DSR CARRIER DET. AUX GND 4/6 ITA6V5B3 / ITA10B3 / ITA18B3 /ITA25B3 APPLICATION NOTICE Design advantage of ITAxxxB3 used with 4-point structure. The ITAxxxB3 has been designed with a 4-point structure (separated Input/output) in order to efficiently protect against disturbances with very high di/dt rates, such as ESD. The purpose of this 4-point structure is to eliminate the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt). Efficient protection depends not only on the component itself, but also on the circuit layout.The drawing given in figure shows the layout to be used in order to take advantage of the 4-point structure of the ITAxxxB3. With this layout, each line to be protected passes through the protection device. In this way, it realizes an interface between the data line and the circuit to be protected, guaranteeing an isolation between its inputs and outputs. The 4 - point structure layout. ORDER CODE ITA 25 B 3 RL PACKAGING: RL = Tape and reel. = Tube. INTEGRATED TRANSIL ARRAY PACKAGE : SO20 PLASTIC VBR min BIDIRECTIONAL 5/6 ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3 MARKING TYPE MARKING ITA6V5B3 ITA6V5B2 ITA10B3 ITA10B3 ITA18B3 ITA18B3 ITA25B3 ITA25B3 PACKAGE MECHANICAL DATA SO20 (Plastic) DIMENSIONS REF. Millimetres Min. Inches Typ. Max. Min. A Typ. Max. 2.65 0.104 A1 0.10 0.20 0.004 0.008 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13.0 0.484 0.512 E 7.40 7.60 0.291 0.299 e H 1.27 10.0 h L K 0.050 10.65 0.394 0.50 0.50 0.419 0.020 1.27 0.020 0.050 8° (max) Packaging : standard packaging is tape and reel. Weight : 0.55g. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGSTHOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6