THDT6511D Application Specific Discretes A.S.D. TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION PRELIMINARY DATASHEET FEATURES DUALASYMETRICALTRANSIENTSUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min. LOW DYNAMIC CHARACTERISTICS STAND CCITT K20 AND LSSGR SO8 DESCRIPTION This device has been especially designed to protect subscriber line cards against overvoltage. Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors. A particular attention has beengiven to the internal wire bonding. The ”4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700µs 5/310µs 10/700µs 5/310µs 1.2/50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2/10µs 2/10µs 10/1000µs 10/1000µs 2.5kV 125A (*) 1kV 40A (*) SCHEMATIC DIAGRAM TIP 1 8 TIP GND 2 7 GND GND 3 6 GND RING 4 5 RING (*) with series resistors or PTC. February 1998 - Ed: 2 1/6 THDT6511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter IPP Peak pulse current ITSM Non repetitive surge peak on-state current F = 50 Hz ITSM F = 50 Hz, 60 x 1 s, 2 mn between pulse Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s (see note 1) Value Unit 10/1000µs 5/310µs 2/10µs 40 50 125 A t = 300 ms t=1s t=5s 10 3.5 1 A 1 A - 55 to + 150 150 °C 260 °C % I PP Note 1 : Pulse waveform : 10/1000µs tr =10µs 5/310µs tr =5µs 2/10µs tr =2µs tp=1000µs tp=310µs tp=10µs 100 50 0 tr t tp THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient Value Unit 170 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol 2/6 I IF Parameter VRM Stand-off voltage IRM Leakagecurrent at stand-offvoltage VBR Breakdown voltage VBO Breakover voltage IH Holding current VF Forward voltage drop VFP Peak forward voltage IBO Breakover current IPP Peak pulse current C Capacitance αT Temperature coefficient VBO VF VBR V VRM IRM IH IBO Ipp THDT6511D 1 - PARAMETERS RELATED TO DIODE LINE / GND Symbol Test conditions VF IF = 1 A VFP see curve fig. 1 Min. Typ. tp = 100 µs Max. Unit 2 V NA NA NA V Min. Typ. Max. Unit NA : Non Available 2 - PARAMETERS RELATED TO PROTECTION THYRISTOR Symbol VBR Tests conditions IR = 1mA 65 VBO 68 IRM VRM = 63 V IBO tp = 100 µs IBO F = 50 Hz RG = 600 Ω 110 IH dV/dt 85 V 100 µA 450 mA 500 mA 150 αT C V mA 10-4/°C 15 VD = 100 mVRMS F = 1KHz Linear ramp up to 67 % of VBR 500 5 pF kV / µs 3/6 THDT6511D DYNAMIC CHARACTERISTICS : VFP and VBO Figure 1 : 60 10 5 2 -85 250 ns 10 us 10 ms t 1 us -100 -130 200 ns Under lightning and power crossing test, the device limits the transient voltage to the values indicated in the figure LSSGR TEST DIAGRAM Figure 2 : THDT6511D To stand the LSSGR test requirements, Rp must be ≥ 15 Ω 4/6 THDT6511D TYPICAL APPLICATION RING GENERATOR - Vbat PTC LINE A TIP T E S T RING RELAY R E L A Y LINE B PTC THBT200S Line A THDT6511D RING Tip D1 Line B Integrated SLIC P1 - For positive surges versus GND (TIP), diode D1 will conduct. - For negative surges versus GND (TIP), protectiondevice P 1 will trigger at maximum voltage equal to VBO. Ring 5/6 THDT6511D ORDER CODE THDT 65 1 1 D RL Tape and reel ASYMMETRICAL TRISIL Low Dynamic Characteristics SO8 PACKAGE BREAKDOWN VOLTAGE VERSION PACKAGE MECHANICAL DATA. SO8 Plastic REF. DIMENSIONS Millimetres Inches Min. Typ. Max. Min. Typ. Max. 0.069 0.010 0.065 0.019 0.010 A a1 a2 0.1 1.75 0.25 0.004 1.65 b b1 0.35 0.19 0.48 0.014 0.25 0.007 C c1 D E 0.50 0.020 45°(typ) 4.8 5.8 5.0 6.2 0.189 0.228 0.197 0.244 e 1.27 0.050 e3 F 3.81 0.150 3.8 4.0 L 0.4 1.27 0.016 0.050 0.6 8° (max) 0.024 M S 0.15 0.157 MARKING : DT651D PACKAGING : Products supplied in antistatic tube or tape and reel. Weight : 0.08g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6