STMICROELECTRONICS L3281

L3281
LOW VOLTAGE TELEPHONE SPEECH CIRCUITS
PRELIMINARY DATA
OPERATION DOWN TO 1.6V / 6.5mA
DTMF & BEEP TONE INPUTS
EXTERNAL MUTING FOR EARPHONE AND
MICROPHONE
SUITABLE FOR DYNAMIC EARPHONE AND
DYNAMIC OR ELECTRET MICROPHONE
AGC CONTROL ON BOTH SENDING AND
RECEIVING
DESCRIPTION
The L3281 is an electronic speech circuit developed to replace hybrid circuits in telephone sets
that can be operated in parallel with other
phones.
DIP14
SO14
ORDERING NUMBERS:
L3281AB
L3281AD1
BLOCK DIAGRAM
June 1993
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This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
L3281
PIN CONNECTION (top view)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
DIP-14
SO-14
Unit
VL
Line Voltage (3 ms pulse)
15
V
IL
Line Current
150
mA
Ptot
Total Power Dissipation, Tamb = 55°C
Top
Operating Temperature
1.0
– 20 to 55
0.6
°C
W
Tj
Junction Temperature
– 65 to 150
°C
THERMAL DATA
Symbol
Rth j-amb
2/10
Parameter
Thermal Resistance Junction Ambient Max
Value
DIP-14
SO-14
90
130
Unit
°C/W
L3281
TEST CIRCUITS
Figure 1.
Figure 2.
Figure 3.
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L3281
ELECTRICAL CHARACTERISTICS IL = 20 to 100mA; R4 =( 51Ω // diode) + 33Ω;
T = 25°C; f = 1kHz; Unless Otherwise Specified
Symbol
Vl
CMRR
Gtx
Parameter
Line Voltage
Test Condition
IL
IL
IL
IL
Min.
= 6.5mA
= 20mA
= 50mA
= 80mA
Common Mode Rej. Ratio
Typ.
Max.
Unit
1.65
3.4
6.0
8
3.7
6.5
9.5
V
V
V
V
50
dB
Sending Gain
Vmi = 10mV; IL = 20mA
30
31.5
33
dB
DGtx
Delta Sending Gain
Vmi = 10mV; IL = 70mA
– 7.2
–5.7
–4.2
dB
THDtx
Sending Distortion
Vso = 700mV; IL = 20mA
5
%
N tx
Sending Noise
Vmi = 0V; IL = 50mA
Zml
Mic. Input Impedance
Vmi = 10mV
Grx
– 70
dB
40
kΩ
Receiving Gain
IL = 20mA; Vri = 0.2V
– 10.7
– 9.2
– 7.7
dB
DGrx
Delta Receiving Gain
IL = 70mA; Vri = 0.2V
– 7.2
– 5.7
– 4.2
dB
THD rx
Receiving Distortion
Vro = 350mV; Load = 350Ω
Vro = 300mV; IL = 10 mA
5
5
%
%
N rx
Receiving Noise
Vri = 0V
Zro
Rec. Output Impedance
Load = 200Ω; Vro = 50V
10
Sidetone
Vmi = 10mV
10
20
600
700
Zm
Line Match. Impedance
Vri = 0.2V
500
Vso
Sending Output Voltage
IL = 6.5mA; THD = 5%
100
Iro
0.5
Receiving Output Current
IL = 6.5mA; THD = 5%
MU lo
Mute Input Low
Dialing Mode
MU hl
Mute Input Open
Speaking Mode
Gmf
DTMF Gain
Vmf IN = 10mV
Rmf
DTMF Input Impedance
THDmf
DTMF Distortion
Vmf LN = 140mV
Gbeep
Beeptone Gain
Vbeep IN = 25mV
R beep
Beeptone Input Impedance
Vbeep IN = 100mV; IL = 20mA
Vz
Zener Voltage (Pin 5)
Iz = 1 mA
Ileak
Leakage Current,V pin5 = 3V
4/10
Ω
dB
Ω
mV
mAp
µA
50
100
1
µA
14.5
16
17.5
dB
5
10
kΩ
5
8.5
5.5
Beeptone Distortion
THD beep
µV
100
4.2
8
kΩ
0.5
5
5.1
6.2
20
%
dB
%
V
µA
L3281
LOGIC OF MUTE SWITCHING
MUTE
DTMF
BEEP
MIC IMP
RX IMP
LOW
ACTIVE TO LINE
ACTIVE TO EARPHONE
MUTED
MUTED
ACTIVE
ACTIVE
(DIAL)
OUTPUT
OUTPUT
OPEN
ACTIVE TO LINE
ACTIVE TO EARPHONE
(SPEECH)
OUTPUT
OUTPUT
CIRCUIT DESCRIPTION
TWO TO FOUR WIRE CONVERSION
The L3281AB is based on a Wheastone bridge
configuration. To balance the bridge the following
relation must be satisfied:
ZI / / Zm = R2
Zb
R3
The AC signal from the microphone is sent to one
diagonal of the bridge (pins 1 and 3). A small percentage of the signal power is lost on Zb (being
Zb > (Zm//Zi)); the main part is sent to the line via
R2.
In receiving mode, the AC signal coming from the
LINE is sensed across the second diagonal of the
bridge (pins 12 and 2).
The impedance Zm and Zb can be complex.
Figure 4: 2/4 Wire Conversion
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L3281
DC CHARACTERISTIC
The fig.5 shows the equivalent simplified circuit of
the DC regulator that provides to give the opportune DC impedance Zdc.

Idc Z4
⋅
VL = 
 RB
⋅

⋅ (RA + RB) + VD + VR1

equivalent.
The zener voltage will be:
 70K

Vz = 
+ 1 Vbe
13.6K


It is possible to supply 1mA to the electrete voltage if VL > (1mA + Iz) ⋅ Rz + Vz
⋅
Figure 6: Low Voltage Speech Circuit.
⋅

 RA

+ 1 + VD + VR1
VL = (Idc Z4) 
RB



since RA = RB
⋅ ⋅
VL = (Idc Z4 2) + VD + VR1
When IL 18 mA and considering neglectible the
VD + VR1 variation versus line current :
∆ VL
ZDC =
= 2 Z4
∆ Idc
At IL = 6.5 mA no current flows through Z4 but
only in the rest of the circuit for internal biasing
(Io;Ia). The bias current Io is fixed by the resistor
R2. The line voltage in this case is :
⋅
VL = Ia RA + VR1 = 1.6 V
The Fig.6 shows the DC characteristic (voltage
between pin 12 and pin 3 versus line current).
The device own an equivalent zener voltage at
pin 5 that can be used as supply voltage for electret microphone (see Block Diagram).
The value of the resistor R2 and the capacitor C2
should be chosen in order to not affect the AC
line inpedance. The Fig.7 shows the zener
Figure 5: Equivalent Simplified Circuit
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Figure 7: Zener Equivalent.
L3281
AC CHARACTERISTIC
The AC Impedance measured at line terminals is
equal to:
1
Zm = (R1 +
) / / ( R2 + R3 + Zb )
jwC1
The value of the capacitor C1 must be In the
range of 22 µF to 100 µF.
The external resistor R1 can be replaced by a resistor/capacitor network in order to realize a complex Impedance Zm.
TRANSMITTING CIRCUIT
The first block of the TX stage is basically a differential amplifier which converts voltage to current.
The inputs are internally polarized at 300 mVdc.
The differential Input impedance is 60 KΩ to allow
a good matching to microphone. The AGC in TX
is function of voltage at pin 14 in order to decrease to max gain of 5.5dB to 6.0dB when the
line current increases.
RECEIVING CIRCUIT
Fig.9 shows the equivalent receiving circuit. The
differential input of RX signal across R2+R3 is
transferred to the AGC block when the mute signal (pin 10) is not active.
The AGC in RX is a function of the voltage at pin
14 and decreases the gain when the line current
increases (5.5dB to 6.0dB).
The final stage is a single ended amplifier with
low output impedance optimized to drive magnetic/dynamic transducers.
Figure 8: Equivalent Transmitting Circuit.
Figure 9: Equivalent Receiving Circuit.
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L3281
DIP14 PACKAGE MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
1.39
TYP.
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
Z
8/10
inch
3.3
1.27
0.130
2.54
0.050
0.100
L3281
SO14 PACKAGE MECHANICAL DATA
DIM.
mm
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.069
0.2
a2
MAX.
0.004
0.008
1.6
0.063
b
0.35
0.46
0.014
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.020
c1
45° (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.15
0.157
L
0.5
1.27
0.020
0.050
M
S
0.68
0.027
8° (max.)
9/10
L3281
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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