U4090B Monolithic Integrated Feature Phone Circuit Description The µc controlled telephone circuit U4090B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, tone ringer interface with dc/dc converter, sidetone equivalent and ear protection rectifiers. The circuit is line powered and contains all components necessary for amplification of signals and adaptation to the line. An integrated voice switch with loudspeaker amplifier allows loudhearing or handsfree operation. With an anti-feedback function, acoustical feedback during loudhearing can be reduced significantly. The generated supply voltage is suitable for a wide range of peripheral circuits. Features D D D D D D D D D DC characteristic adjustable D Voice switch Transmit and receive gain adjustable D Tone ringer interface with dc/dc converter Symmetrical input of microphone amplifier D Zero crossing detection Anti-clipping in transmit direction D Common speaker for loudhearing and tone ringer Automatic line loss compensation D Supply voltages for all functional blocks of a D D D D D D Speech circuit with two sidetone networks subscriber set Symmetrical output of earpiece amplifier D Integrated transistor for short circuiting the line Built-in ear protection voltage DTMF and MUTE input D Answering machine interface Adjustable sidetone suppression independent of sending and receiving amplification D Operation possible from 10 mA line currents Built-in line detection circuit Benefits Integrated amplifier for loudhearing operation D Savings of one piezo electric transducer Anti-clipping for loudspeaker amplifier D Complete system integration of analog signal processing on one chip Improved acoustical feedback suppression D Very few external components Power down Applications Feature phone, answering machine, fax machine, speaker phone Speech circuit Audio amplifier Voice switch Tone ringer Loudhearing and Tone ringing MC with EEPROM/ DTMF 94 8741 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 1 (34) Preliminary Information 42 2 2 (34) Preliminary Information SAI TSACL SAO 24 22 12 26 29 TLDT ATAFS 30 TLDR INLDT 27 TX ACL MIC GSA 23 SAI SACL SA Acoustical feedback suppression control DTMF 4 5 INLDR 28 TTXA DTMF MIC2 MIC1 94 8064 3 44 35 MUTR 25 MUTX Mute receive control Transmit mute control 1 GT MICO TXIN TXA 36 RA2 40 41 900 600 VL 8 39 RA1 W W 31 21 ST BAL AGA control AGA IMPSEL Impedance control RECO2 RECO1 GR RAC –1 33 STO L 37 – + Line detect I Current supply RECIN VMP I Supply Receive 43 V MP 14 Power supply attenuation Q S VL SENSE V B 11 10 STIL STIS 38 + – 7 IND – + – + V MPS 13 I REF PD GND V M 18 19 15 16 THA RFDO SW OUT C OSC V RING 17 LIDET 20 32 6 9 34 U4090B Block Diagram Figure 1. TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 R27 C19 VM Preliminary Information R16 R17 Loudspeaker MICO R19 RECO C20 R20 C22 DTMF Generator R28 94 8849 R14 C14 C15 C16 24 22 12 27 28 23 1 42 4 2 5 R1 C18 30 C17 29 R31 26 C21 Micro– phone R15 VM 44 25 35 31 C3 Earpeace R11 40 7 R3 VM C12 VM R9 R10 C13 41 39 U4090B 21 13 V R2 36 33 8 to STIN R13 R12 3 C1 C2 38 10 C11 R8 R4 C4 37 14 STO STIN 2 (Option) 11 C5 43 VL R6 R7 VM C8 to m C C10 18 19 15 16 20 17 9 6 32 34 13 C6 L1 Q1 C9 R5 Micro controller hook switch Ring VMP C7 Tip U4090B Figure 2. Application circuit for loudhearing 3 (34) R24 HF–Mic 4 (34) Preliminary Information 94 8850 VM C24 C25 C26 R16 R29 C27 R30 R17 Loud speaker LOGTX RECO R22 R23 C23 DTMF R25 R15 R14 C14 C15 C16 R18 30 27 26 24 22 12 3 R13 23 1 28 42 2 4 5 R1 C17 29 C18 C21 Micro– phone R26 VM C2 25 35 33 to STIN R12 44 C1 31 R11 40 7 R3 VM C12 VM R9 R 10 C13 41 39 U4090B 21 R2 Earpiece 36 8 13 V C3 C11 R8 STN 38 10 R4 C6 R7 BC177 R21 VB R6 VM to m C C8 LOGTX VL C10 18 19 15 16 20 17 9 6 32 34 13 43 C5 14 STIN 2 (Option) 37 11 C4 L1 Q1 C9 R5 Micro– controller hook switch Ring VMP C7 Tip U4090B Figure 3. Application for handsfree operation TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Typical value of external components C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 C22 C23 C24 C25 C26 C27 L1 R1 R2 100 nF 4.7 nF 10 mF 220 mF 47 mF 470 mF 820 nF 100 mF 100 nF 150 nF 68 nF 33 nF 10 mF 100 nF 1 mF 47 mF 10 mF 10 mF 68 nF 68 nF 1 mF 100 nF 6.8 nF 10 nF 100 nF 470 nF 33 nF 2.2 mH 27 kW 20 kW TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 R18 R19 R20 R21 R22 R23 R24 R25 R26 R27 R28 R29 R30 R31 > 68 kW 10 W 1.5 kW 62 kW 680 kW 22 kW 330 W 3 kW 62 kW 30 kW 62 kW 120 kW 47 kW 1 kW 1.2 W 30 kW 6.8 kW 6.8 kW 15 kW 330 kW 220 kW 68 kW 2 kW 3.3 kW 18 kW 2 kW 1 kW 12 kW 56 kW 5 (34) Preliminary Information U4090B Pin Description GT 1 44 TXIN DTMF 2 43 RECIN MICO 3 42 TTXA Pin 1 Symbol Function A resistor from this pin to GND sets the GT amplification of microphone and DTMF signals, the input amplifier can be muted by applying VMP to GT. 2 DTMF MIC2 4 41 GR MIC1 5 40 RECO1 3 4 MICO MIC 2 PD 6 39 RAC 5 MIC 1 IND 7 38 STIL 6 PD VL 8 37 STIS GND 9 36 RECO2 7 IND SENSE 10 35 MUTR VB 11 34 VM 8 9 VL GND SAO 12 33 STO U4090B VMPS 13 32 IREF VMP 14 31 AGA 10 SWOUT 15 30 TLDR COSC 16 29 TLDT VRING 17 28 INLDR 12 13 THA 18 27 INLDT 14 RFDO 19 26 ATAFS LIDET 20 25 MUTX 11 15 IMPSEL TSACL 21 24 23 22 SAI 16 Input for DTMF signals, also used for the answering machine and handsfree input Output of microphone preamplifier Non-inverting input of microphone amplifier Inverting input of microphone amplifier Active high input for reducing the current consumption of the circuit, simultaneously VL is shorted by an internal switch The internal equivalent inductance of the circuit is proportional to the value of the capacitor at this pin, a resistor connected to ground may be used to reduce the dc line voltage Line voltage Reference point for dc- and ac-output signals SENSE A small resistor (fixed) connected from this pin to VL sets the slope of the dc characteristic and also effects the line length equalization characteristics and the line current at which the loudspeaker amplifier is switched on VB Unregulated supply voltage for peripheral circuits (voice switch), limited to typically 7 V SAO Output of loudspeaker amplifier VMPS Unregulated supply voltage for µP, limited to 6.3 V VMP Regulated supply voltage 3.3 V for peripheral circuits (especially microprocessors), minimum output current: 2 mA (ringing) 4 mA (speech mode) SWOUT Output for driving external switching transistor COSC 40 kHz oscillator for ringing power converter GSA 94 7905 e 6 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Pin 17 18 19 20 21 22 23 24 25 26 27 28 Symbol Function VRING Input for ringing signal protected by internal zener diode THA Threshold adjustment for ringing frequency detector RFDO Output of ringing frequency detector LIDET Line detect; output is low when the line current is more than 15 mA IMP- Control input for selection of line SEL impedance 1. 600 Ω 2. 900 Ω 3. Mute of second transmit stage (TXA); also used for indication of external supply (answering machine); last chosen impedance is stored TSACL Time constant of anti-clipping of speaker amplifier GSA Current input for setting the gain of the speaker amplifier, adjustment characteristic is logarithmical, or RGSA > 2 MΩ, the speaker amplifier is switched off SA I Speaker amplifier input (for loudspeaker, tone ringer and handsfree use) MUTX Three state input of transmit mute: 1) Speech condition; inputs MIC1 / MIC2 active 2) DTMF condition; input DTMF active a part of the input signal is passed to the receiving amplifier as a confidence signal during dialing 3) Input DTMF used for answering machine and handsfree use; receive branch not affected ATAFS Attenuation of acoustical feedback suppression, maximum attenuation of AFS circuit is set by a resistor at this pin, without the resistor, AFS is switched off INLDT Input of transmit level detector INLDR Input of receive level detector TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 Pin 29 30 31 Symbol Function TLDT Time constant of transmit level detector TLDR Time constant of receive level detector AGA Automatic gain adjustment with line current a resistor connected from this pin to GND sets the starting point max. gain change: 6 dB. 32 IREF 33 STO 34 VM 35 MUTR 36 RECO 2 Inverting output of receiving amplifier STI S Input for side tone network (short loop) or for answering machine STI L Input for side tone network (long loop) RAC Input of receiving amplifier for ac coupling in feedback path RECO 1 Output of receiving amplifier GR A resistor connected from this pin to GND sets the receiving amplification of the circuit; amplifier RA1 can be muted by applying VMP to GR 37 38 39 40 41 42 43 44 Internal reference current generation; RREF = 62 kΩ; IREF = 20 µA Side tone reduction output output resistance is approx. 300 Ω, maximum load impedance: 10 kΩ. Reference node for microphoneearphone and loudspeaker amplifier, supply for electret microphone (IM ≤ 700 mA) Three state mute input 1. Normal operation 2. Mute of ear piece 3. Mute of RECIN signal Condition of earpiece mute is stored TTXA Time constant of anticlipping in transmit path RECIN Input of receiving path; input impedance is typically 80 kW TXIN Input of intermediate transmit stage, input resistance is typically 20 kΩ 7 (34) Preliminary Information U4090B DC line interface and supply voltage generation The DC line interface consists of an electronic inductance and a dual port output stage, which charges the capacitors at VMPS and VB. The value of the equivalent inductance is given by IMPSOPT - hand an extra amount of current to the supply voltages, when the NPNs in parallel are unable to conduct current. L = RSENSE @ CIND @ (RDC @ R30) / (RDC + R30)In order to improve the supply during worst case operating conditions two PNP current sources - IBOPT and A flowchart for the control of the current sources (figure 5) shows, how a priority for supply VMPS is achieved. VL 10 W SENSE RSENSE IBOPT IMPSOPT < 5 mA < 5 mA CIND 6.3 V VMPS 10 m F – + + – IND 30 kW R30 RDC = 470 m F = VMP 3.3 V + – VOFFS 7.0 V 3.3 V/ 2 mA 47 m F VB 220 m F 94 8047 Figure 4. DC line interface with electronic inductance and generation of a regulated and an unregulated supply Y VMPS < 6.3 V N VSENSE–VMPS>200 mV N Y N VSENSE–VB>200 mV IMPSOPT = 0 IBOPT = 0 Y VB < 6.3 V N Y Charge CMPS (IMPSOPT) Charge CB (IBOPT) Reduce IBOPT (IMPSOPT = 0) 94 8058 Figure 5. Supply capacitors CMPS and CB are charged with priority on CMPS 8 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B The U4090B contains two identical series regulators, which provide a supply voltage VMP of 3.3 V suitable for a microprocessor. In speech mode both regulators are active, because VMPS and VB are charged simultaneously by the DC-line interface. Output current is 4 mA. The capacitor at VMPS is used to provide the microcomputer with sufficient power during long line interruptions. Thus long flash pulses can be bridged or a LCD display can be turned on for more than 2 seconds after going on hook. When the system is in ringing mode, VB is charged by the on chip ringing power converter. In this mode only one regulator is used to supply VMP with max. 2 mA. VRING Supply structure of the chip As a major benefit the chip uses a very flexible system structure, which allows simple realization of numerous applications such as: group listening phone handsfree phone ringing with the built in speaker amplifier answering machine with external supply The special supply topology for the various functional blocks is illustrated in figure 6. RPC VB 7V Voltage regulator VMPS Power supply VL VMP 6.3 V Voltage regulator QS PD ES IMPED CONTR LIDET RFDO IMPSEL LIDET VLon RFD TXA TXACL OFFSA COMP SAI,SA SACL AFS MIC, DTMF AGA, RA1, RA2 TX MUTE MUT REC, STBAL RECATT 94 8046 Figure 6. Supply of functional blocks is controlled by input voltages VL, VB, Vring and by logic inputs PD and IMPSEL There are four major supply states: 1. 2. 3. 4. For line voltages below 1.9 V the switches remain in their quiescent state as shown the diagram. Speech condition Power down (pulse dialing) Ringing External supply OFFSACOMP disables the group listening feature (SAI, SA, SACL, AFS) below line currents of approximately 10 mA. 1. In speech condition the system is supplied by the line current. If the LIDET-block detects a line voltage above the fixed threshold (1.9 V), the internal signal VLON is activated, thus switching off RFD and RPC and switching on all other blocks of the chip. TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 2. When the chip is put into Power-down mode (PD = high), e.g. during pulse dialing, the internal switch QS shorts the line and all amplifiers are switched off. In this condition LIDET, voltage regulators and IMPED CONTR are the only active blocks. 9 (34) Preliminary Information U4090B 3. During ringing the supply for the system is fed into VB via the ringing power converter (RPC). The only functional amplifiers are found in the speaker amplifier section (SAI, SA, SACL). Acoustic feedback suppression 4. In an answering machine the chip is powered by an external supply via pin VB. This application demands a posibility to activate all amplifiers (except the transmit line interface TXA). Selecting IMP- Acoustical feedback from the loudspeaker to the handset microphone may cause instability in the system. The U4090B offers a very efficient feedback suppression circuit, which uses a modified voice switch topology. figure 8 shows the basic system configuration. SEL = high impedance activates all switches at the ES line. TX Att Handset microphone Log Hybrid Line Att contr Log Loudspeaker RX Att 94 8956 Figure 5. Basic voice switch system Two attenuators (TX ATT and RX ATT) reduce the critical loop gain by introducing an externally adjustable amount of loss either in the transmit or in the receive path.The sliding control in block ATT CONTR determines, wether the TX or the RX signal has to be attenuated. The overall loop gain remains constant under all operating conditions. Selection of the active channel is made by comparison of the logarithmically compressed TX- and RX- envelope curve. The system configuration for group listening, which is realized in the U 4090 B, is illustrated in figure 9. TXA and SAI represent the two attenuators, whereas the logarithmic envelope detectors are shown in a simplified way (operational amplifiers with two diodes). 10 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B VL GT MICO TIN INLDT VBG TLDT – + STO VL ZL TXA Zint SAO AFS control Max att. AGA GSA – VBG + SAI SAI TLDR INLDR RECIN RECO1 GR STIS STO STN 94 8059 Figure 6. Integration of acoustic feedback suppression circuit into the speech circuit environment A detailed diagram of the AFS (acountic feedback suppression) is given in figure 10. Receive and Transmit signals are first processed by logorithmic rectifiers in TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 order to produce the envelopes of the speech at TLDT and RLDT. After amplification a decision is made by the differential pair, which direction should be transmitted. 11 (34) Preliminary Information U4090B TLDT TXA TX SAI RLDT INLDT AGA AGA RX IAGAFS RLDR IAT IATAFS INLDR IGSA IATGSA 94 8060 TLDR ATAFS GSA RATAFS Figure 7. Accoustic feedback suppression by alternative control of transmit- and speaker amplifier gain The attenuation of the controlled amplifiers TXA and SAI is determined by the emitter current IAT, which is comprised of three parts: IATAS IATGSA IAGAFS sets maximum attenuation decreases the attenuation, when speaker amplifier gain is reduced decreases the attenuation according to the loop gain reduction caused by the AGA– function IAT = IATAFS - IATGSA - IAGAFS DG = IAT * 0.67 dB/ mA Figure 11 illustrates the principal relationship between speaker amplifier gain (GSA) and attenuation of AFS (ATAFS). Both parameters can be adjusted independently, but the internal coupling between them has to be considered. Maximum usable value of GSA is 36 dB. The shape of the characteristic is moved in the x-direction by adjusting resistor RATAFS, thus changing ATAFSm. The actual value of attenuation (ATAFSa), however, can be determined by reading the value which belongs to the actual gain GSAa. If the speaker amplifier gain is reduced, the attenuation of AFS is automatically reduced by the same amount, in order to achieve a constant loop gain. Zero attenuation is set for speaker gains GSA GSA0 = 36 dB - ATAFSm. v 12 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B 94 8957 ATAFS (dB) ATAFSm RATAFS RATAFS not usable ATAFSa GSAo 36 dB GSAa GSA (dB) Figure 8. Reducing speaker amplifier gain results in an equal reduction of AFS attenuation 94 8958 When Power Down is activated (during pulse dialing), all of the line current flows through the short circuiting transistor QS (see figure 6). As long as IL is above typ. 1.6 mA, output LIDET is low. This comparator does not use hysteresis. LIDET IL 94 8959 PD LIDET Figure 9. Line detection with two comparators for speech mode and pulse dialling Line detection (LIDET) ILOFF The line current supervision is active under all operating conditions of the U4090B. In speech mode (PD = inactive) the line current comparator uses the same thresholds as the comparator for switching off the entire speaker amplifier. The basic behaviour is illustrated in figure 13. Actual values of ILON/ILOFF vary slightly with the adjustment of the DC-characteristics and the selection of the internal line impedance. TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 ILON IL Figure 10. Line detection in speech mode with hysteresis 13 (34) Preliminary Information U4090B Ringing power converter (RPC) Ringing frequency detector (RFD) RPC transforms the input power at VRING (high voltage/ low current) into an equivalent output power at VB (low voltage/ high current), which is capable of driving the low ohmic loudspeaker. Input impedance at VRING is fixed at 5 kW and the efficiency of the step down converter is approx. 65%. The U4090B offers an output signal for the microcontroller, which is a digital representation of the double ringing frequency. It is generated by a current comparator with hysteresis. Input voltage VRING is transformed into a current via RTHA. Thresholds are 8 mA and 24 mA. RFDO and VRING are in phase. A second comparator with hysteresis is used to enable the output RFDO, as long as the supply voltage for the microprocessor VMP is above 2.0 V. 7 RDC=∞ VL ( V ) 6 RDC=130kW 5 RDC=68kW 4 3 10 94 9131 12 14 16 18 20 IL ( mA ) = ILON at line impedance = 600 W = ILOFF = ILON at line impedance = 900 W = ILOFF Figure 11. Comparator thresholds depend on dc mask and line impedance Absolute Maximum Ratings Parameters Line current DC line voltage Maximum input current Junction temperature Ambient temperature Storage temperature Total power dissipation, Tamb = 60°C Pin 17 Symbol IL VL IRING Tj Tamb Tstg Ptot 14 (34) Preliminary Information Value 140 12 15 125 – 25 to + 75 – 55 to + 150 0.9 Unit mA V mA °C °C °C W TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Thermal Resistance Junction ambient Parameters SSO44 Symbol RthJA Value 70 Unit K/W Electrical Characteristics f = 1 kHz, 0 dBm = 775 mVrms, IM = 0.3 mA, IMP = 2 mA, RDC = 130 kW, Tamb = 25°C, RGSA = 560 kW, Zear = 68 nF + 100 W, ZM = 68 nF, Pin 31 open, VIMPSEL = GND, VMUTX = GND, VMUTR = GND, unless otherwise specified. Parameters DC characteristics Test Conditions / Pin IL = 2 mA I = 14 mA DC voltage drop over circuit IL = 60 mA L IL = 100 mA Symbol VL Min Typ 2.4 5.0 7.5 9.4 4.6 8.8 Max Unit Figure V 26 5.4 10.0 Transmission amplifier, IL = 14 mA, VMIC = 2 mV, RGT = 27 kW, unless otherwise specified Adjustment range of transGT 40 45 50 dB mit gain RGT = 12 kW 47 49 Transmitting amplification 48 dB RGT = 27 kW 39.8 41.8 GT IL 14 mA, Frequency response DGT 0.5 dB f = 300 to 3400 Hz Pin 31 open Gain change with current DGT 0.5 dB IL = 14 to 100 mA Tamb = – 10 to + 60 Gain deviation DGT 0.5 dB °C CMRR of microphone CMRR 60 80 dB amplifier Input resistance of MIC RGT = 12 kW 50 Ri kW amplifier RGT = 27 kW 75 45 110 IL > 14 mA Distortion at line dt 2 % VL = 700 mVrms IL > 19 mA d < 5% VLmax 1.8 3 4.2 dBm Vmic = 25 mV Maximum output voltage CTXA = 1 mF w Noise at line psophometrically weighted Anti-clipping attack time release time Gain at low operating current IMPSEL = open RGT = 12 kW IL > 14 mA GT = 48 dB CTXA = 1 mF each 3 dB overdrive IL = 10 mA IMP = 1 mA RDC = 68 kW Vmic = 1 mV IM = 300 mA TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 " " " VMICOmax –5.2 no GT – 80 0.5 9 40 dBm –72 dBmp 28 28 28 28 28 28 28 28 28 28 28 ms 42.5 dB 28 15 (34) Preliminary Information U4090B Parameters Distortion at low operating current Line loss compensation Test Conditions / Pin IL = 10 mA IM = 300 mA IMP = 1 mA RDC = 68 kW Vmic = 10 mV IL = 100 mA, RAGA = 20 kW Symbol Min Typ Max Unit Figure 5 % 28 – 5.2 dB 28 dB 28 dB 28 dB 27 – 0.25 dB 27 13 dB 27 dB 27 dB dB 27 27 Vrms 27 60 dB 27 0.775 Vrms mA (peak) dt GTI D – 6.4 – 5.8 w Mute suppression IL 14 mA GTM 60 80 a) MIC muted (microphone Mutx = open preamplifier b) TXA muted (second IMPSEL = open GTTX 60 stage) Receiving amplifier, IL = 14 mA, RGR = 62 k, unless otherwise specified, VGEN = 300 mV IL 14 mA, single ended Adjustment range of –8 +2 GR differential MUTR = receiving gain –2 +8 GND w Receiving amplification Amplification of DTMF signal from DTMF IN to RECO 1, 2 Frequency response Gain change with current Gain deviation Ear protection differential MUTE suppression a) RECATT b) RA2 c) DTMF operation v Output voltage d 2% differential Maximum output current d 2% Receiving noise psophometrically weigthed v Output resistance Line loss compensation Gain at low operating current RGR = 62 kW differential RGR = 22 kW differential w IL 14 mA VMUTX = VMP IL > 14 mA, f = 300 to 3400 Hz IL = 14 to 100 mA Tamb = – 10 to + 60°C IL 14 mA VGEN = 11 Vrms IL 14 mA MUTR = open VMUTR = VMP VMUTX = VMP w w –1 GR 7.5 GRM 7 10 GR DGR " 0.5 " 0.5 " 0.5 EP 2.2 GRF D D GR D IL = 14 mA Zear = 68 nF + 100 W Zear = 100 W 4 w Zear = 68 nF + 100 W IL 14 mA each output against GND RAGA = 20 kW, IL = 100 mA IL = 10 mA IMP = 1 mA IM = 300 mA VGEN = 560 mV RDC = 68 kW – 1.75 ni – 80 Ro GRI D – 77 dBmp 10 W – 7.0 – 6.0 – 5.0 dB –2 –1 0 dB 27 27 27 27 27 GR 16 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Parameters AC impedance Distortion at low operating current Speaker Amplifier Minimum line current for operation Input resistance Gain from SAI to SAO Output power Output noise (Input SAI open) psophometrically weighted Gain deviation Mute suppression Gain change with current Resistor for turning off speaker amplifier Gain change with frequency Test Conditions / Pin VIMPSEL = GND VIMPSEL = VMP IL = 10 mA IMP = 1 mA VGEN = 560 mV RDC = 68 kW No ac signal Pin 24 VSAI = 3 mV, IL = 15 mA, RGSA = 560 kW RGSA = 20 kW Symbol Zimp Zimp Min 570 840 Typ 600 900 Max 640 960 Unit dR 5 % 27 ILmin 15 mA 31 22 kW 31 14 GSA 35.5 36.5 –3 3 7 20 37.5 dB Figure 27 31 Load resistance RL = 50 W, d < 5% VSAI = 20 mV IL = 15 mA IL = 20 mA PSA PSA IL > 15 mA nSA 200 mVpsoph 31 DGSA "1 dB 31 VSAO – 60 dBm 31 IL = 15 to 100 mA DGSA "1 dB 31 IL = 15 to 100 mA RGSA 2 MW 31 IL = 15 mA f = 300 to 3400 Hz 20 dB over drive DGSA " 0.5 dB 31 ms 31 ms 31 dB 29 dB 29 dB 29 IL = 15 mA Tamb = – 10 to + 60°C IL = 15 mA, VL = 0 dBm, VSAI = 4 mV Pin 23 open 31 0.8 1.3 mW Attack time of anti-clipping tr 5 Release time of anti-cliptf 80 ping DTMF-Amplifier Test conditions: IMP = 2 mA, IM = 0.3 mA, VMUTX = VMP Adjustment range of DTMF IL = 15 mA GD 40 50 gain Mute active IL = 15 mA, VDTMF = 8 mV DTMF amplification GD 40.7 41.7 42.7 Mute active: MUTX = VMP Gain deviaton W W IL = 15 mA Tamb = – 10 to + 60 °C TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 GD " 0.5 17 (34) Preliminary Information U4090B Parameters Test Conditions / Pin RGT = 27 kW, Input resistance RGT = 15 kW I 15 mA Distortion of DTMF signal L VL = 0 dBm Gain deviation with current IL = 15 to 100 mA AFS Acousting feedback suppression Adjustment range of IL 15 mA attenuation IL 15 mA, IINLDT = 0 mA Attenuation of transmit RATAFS = 30 kW gain IINLDR = 10 mA w w w Attenuation of speaker amplifier w IL 15 mA IINLDP = 0 m RATAFS = 30 kW IINLDR = 10 m Symbol Ri Min 60 26 Typ 180 70 dD DGD 0 Max 300 130 Unit Figure kW 29 2 " 0.5 % 29 dB 29 50 dB 31 DGT 45 dB 31 DGSA 50 dB 31 V 31 3.5 V 26 6.7 V 26 3.3 V 26 7.6 V 26 mW 30 w AFS disable IL 15 mA VATAFS Supply voltages, Vmic = 25 mV, Tamb = – 10 to + 60°C IL = 14 mA, VMP VMP RDC = 68 kW IMP = 2 mA IL = 100 mA VMPS VMPS RDC = inf., IMP = 0 mA IL 14 mA, VM VM IM = 700 mA RDC = 130 kW IB = + 20 mA, VB VB IL = 0 mA Ringing power converter, IMP = 1 mA, IM = 0 Maximum output power VRING = 20.6 V PSA RFDO: low to high VRINGON Threshold of ring VHYST frequency detector = VRINGON - RINGOFF VHYST Input impedance VRING = 30 V RRING f = 300 Hz to 3400 Hz Input impedance in speech RRINGSP IL > 15 mA, mode w 1.5 3.1 3.3 1.3 7 20 17.5 4 11.0 5 V 30 kW 30 kW 30 V 30 2.2 V 30 33.3 V 30 6 150 VRING = 20V + 1.5Vrms Logic-level of frequency detector Ring detector enable Zener diode voltage VRING = 0 V VB = 4 V VRING = 25 V VRING = 25 V, RFDO high IRING = 25 mA 0 VRFDO VMP VMPON 1.8 VRINGmax 30.8 18 (34) Preliminary Information 2.0 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Parameters MUTR Input MUTR input current MUTR input voltage Test Conditions / Pin VMUTR = GND IL > 14 mA VMUTR = VMP Mute low; IL > 14 mA Mute high; IL > 14 mA Symbol Min Typ Max Unit Figure – 30 mA 32 0.3 V 32 V 32 uA 32 – 20 IMUTE +10 VMUTE VMUTE VMP-0.3 V PD Input PD input current Input voltage Voltage drop at VL PD active, IL > 14 mA VPD = VMP PD = active PD = inactive IL = 14 mA, PD = active IL = 100 mA, PD = active Input characteristics of IMPSEL IL 14 mA Input current VIMPSEL = VMP VIMPSEL = GND w Input voltage Ipd Vpd Vpd 9 V 2 0.3 VL 1.5 VL 1.9 IIMPSEL IIMPSEL 18 – 18 Input high VIMPSEL Input low VIMPSEL V 32 32 mA mA 32 V 32 0.3 V 32 30 – 30 mA mA 32 V 32 V 32 VMP-0.3 V MUTX input Input current Input voltage Line detection Line current for LIDET active Line current for LIDET inactive Current threshold during power down VMUTX = VMP VMUTX = GND IMUTX IMUTX Input high VMUTX Input low VMUTX 20 – 20 VMP-0.3 V 0.3 PD = inactive ILON 12.6 mA 26 PD = inactive ILOFF 11.0 mA 26 mA 26 VB = 5 V, PD = active TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 ILONPD 0.8 1.6 2.4 19 (34) Preliminary Information U4090B U 4090 B - Control 0 0 to Z 1 to Z 1 0 0 to Z 1 to Z 1 IMPSEL Line-impedance = 600 W TXA = on ES = off Line-impedance = 600 W TXA = off ES = on Line-impedance = 900 W TXA = off ES = on Line-impedance = 900 W TXA = on ES = off MODE Speech MUTR RA2 = on RECATT = on STIS + STIL = on RA2 = on RECATT = off STIS = on, STIL = off RA2 = off RECATT = off STIS = on, STIL = off AGA off for STIS MODE Speech RA2 = off RECATT = on STIS + STIL = on Speech + earpeace mute MUTX MIC 1/2 transmit enabled receive enable AFS = on AGA = on TXACL = on MODE Speech Z DTMF transmit enabled receive enable AFS = on AGA = on TXACL = on For answering machine 1 DTMF transmit enabled DTMF to receive enable AFS = off AGA = off TXACL = off DTMF dialling 0 Transmit-mute Transmit-mute Speech For answering machine For answering machine Logic-level 0 = < (0.3 V) Z = > (1 V) < (VMP – 1 V) or (open input) 1 = > (VMP – 0.3 V) RECATT = Receive attenuation STIS, STIL = Inputs of sidetone balancing amplifiers ES = External supply AFS = Acoustical feedback supression control AGA = Automatic gain adjustment RA2 = Inverting receive amplifier TXACL = Transmit anticlipping control 20 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B 94 8856 Figure 12. Typical DC Characteristic GT (dB) RGT (kohm) 94 8860 Figure 13. Typical adjustment range of transmit gain TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 21 (34) Preliminary Information U4090B 94 8859 Figure 14. Typical adjustment range of receive gain (differential output) 948855 Figure 15. Typical AGA-Characteristic 22 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B 94 8858 Figure 16. Typical load characteristic of VB for a maximum (RDC = infinity) DC-characteristic and 3 mW loudspeaker output 94 8874 Figure 17. Typical load characteristic of VB for a medium DC-characteristic (RDC = 130 kW) and 3 mW loudspeaker output TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 23 (34) Preliminary Information U4090B 94 8861 Figure 18. Typical load characteristic of VB for a minimum DC-characteristic (RDC = 68 kW) and 3 mW loudspeaker output 24 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 Preliminary Information 4 41 68 nF 5 40 ZEAR RGR 6 39 10 m F VM reference figure for not connected pins S1 = closed: speech mode S2 = closed: ringer mode 3 42 1m F 1 kW VM 2 1 RGT 43 150 nF 44 220 nF VL RDC VM 10 m F 8 600 W 37 3 kW 22 mF 7 38 3 kW VM 9 10 35 S1 4.7 nF 36 open 10 W IL 33 IM 11 13 32 220 mF 50 W 47 m F 1000 m F 12 U4090B 34 100m F 36 kW 47 nF VMP 36 kW 47 nF 47 m F 14 31 62 k W 2.2 mH IDC IMP 15 30 10 m F 68 nF 17 28 3.3 nF S2 18 27 3.3 nF SD103A BC556 16 29 10 m F DC VRing 680 k W 19 26 2 MW 20 25 open VMP 1 mF VMP open 21 24 22 23 RGSA 94 9132 Mico U4090B Figure 19. Basic test circuit 25 (34) VL 2 1 26 (34) Preliminary Information 3 42 VMIC 4 41 VMP 5 40 68 nF RGR 6 39 VM RDC 7 38 10m F 10m F 8 37 ZEAR Line detection: S1a VB (external supply): S1b open pins should be connected as shown in figure 25 RGT 43 44 220 nF 150 nF 1 m F Mico IL 9 VL V 10 35 4.7 nF 36 34 33 IM IB 10 W 12 13 32 14 31 62 k W b a open DC VB S1 220 m F 1000 m F 47 m F 11 U4090B 100m F IMP 15 30 RAGA 16 29 17 28 18 27 19 26 VLIDET 30 k W V 20 25 1m F 21 24 RGSA 22 23 U4090B Figure 20. DC characteristics, line detection TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 94 9133 VL TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 2 1 S2 220 nF RGT 43 44 4 41 1 kW VM 3 42 220 nF 150 nF 1 m F Mico 5 V VDTMF 68 nF 6 39 10 m F 40 RGR 7 Preliminary Information VGEN b S1 4.7 nF 9 36 VMP AC a 22 m F 8 37 10 m F 38 ZEAR VZEAR, dr RDC 600 W VM 11 V 13 VLR 1000 m F 12 32 47 m F 14 31 62 k W S3 IMP 15 30 RAGA 16 29 17 28 18 27 19 26 VMP VMP 20 25 open open 1mF 21 24 open pins should be connected as shown in figure 25 c) DTMF operation: D GR = 20*log VLR/VZEAR) dB + GR, MUTX = VMP b) RA2: D GR = 20*log (VLR/VZEAR) dB + GR, MUTR = VMP a) RECATT: D GR = 20*log (VLR/VZEAR) dB +GR, MUTR = open Mute suppression: Line loss compensation: D GRI = GR (at IL = 100 mA) –GR (at IL = 14 mA), S3 = closed Receiving noise: S1a Receive amplification: GR = 20*log ( VZEAR/VLR) dB (S1 = b, S2 open) DTMF-control signal: GRM = 20*log (VZEAR/VDTMF) dB (S1 =a, S2 = closed) AC-impedance: (VLR/ (VGEN – VLR)) * ZL IL 10 W 33 IM U4090B 34 220 m F 10 35 100 m F open 22 23 U4090B Figure 21. 27 (34) 94 9134 1 44 2 43 150 nF VL 28 (34) Preliminary Information 1 mF b AC W V 3 S1 1 mF 42 25 k RGTVMICO max 220 nF Mico S2 a 5 40 b 68 nF Vmic VCM 4 41 RGR S1 25 k a 6 39 22 mF W RDC 10 mF 8 37 ZEAR 600 7 38 10 mF W VM V 4.7 nF 9 10 W 10 35 34 220 mF 1000 mF 12 33 IM 13 32 47 14 31 S3 W mF 62 k 15 30 RAGA VL Vmic 17 28 18 27 19 26 50 k VL (S2 = open) VL (S2 = closed) VCM + GT with S1b, S2 = closed, VL VL (at IMPSEL = open) VL (at IMPSEL = low) VL (at MUTX = open) open pins should be connected as shown in figure 25 GTTX = 20*log Mute suppression: GTM = 20*log –1 VL (at MUTX = low) Common mode rejection ratio: CMRR = 20*log Input resistance: Ri = open V MP 20 25 GTI D = GT (at IL = 100 mA) –GT (at IL = 14 mA), S3 = closed I MP 16 29 V MP Gain change with current: GTI = D GT (at IL = 100 mA) –GT (at IL = 14 mA) Line loss compensation: Transmitting amplification GT = 20*log IL 11 U4090B 100 mF VL, dt, n o 36 V MP open open 1 mF S3 = open 21 24 22 23 U4090B Figure 22. Transmission amplifier TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 94 9135 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 Preliminary Information RGT VGEN3 2 43 220 nF 1 44 S3 VL AC 50 k W 3 1kW VM 42 220 nF 150 nF 1 m F Mico 4 41 V VDTMF 5 40 68 nF RGR 6 7 38 10 m F RDC 39 VM 10 mF 4.7 nF 8 37 ZEAR 9 36 IL 10 W 10 35 34 33 IM V 220 mF 11 47 mF 14 31 VL 50kW: S3 = open dD 13 32 62 k W VL: S3 = closed 1000 mF 12 U4090B 100 mF 17 28 18 27 19 26 20 25 21 24 1 mF Open pins should be connected as shown in figure 25 W Input resistance: (VL50K / (VL – VL50k)) * 50k 16 29 DTMF-amplifier: 20log (VL/VDTMF) dB IMP 15 30 VMP open 22 23 U4090B Figure 23. DTMF amplifier 29 (34) 94 9136 43 2 44 1 3 42 4 41 68 nF 5 40 6 39 RDC 7 38 IL 10 mF 8 37 4.7 nF 9 36 Open pins should be connected as shown in figure 25 10 35 33 10 W 12 13 32 30 (34) Preliminary Information 220 mF 50 W 15 30 2.2 mH VMP ramp S5 47 m F 14 31 62 k W IMP 47m F 1000 mF VSAO 11 U4090B 34 100 m F Vsao2 (S4 closed) RSAO 2) Threshold of ringing frequency detector: detecting VRFDO, when driving VRING from 2 V to 22 V (VRINGON) and back again (VRINGOFF) (S2 = closed) VRING 3) Input impedance: RRING = (S3 = closed) IRING 4) Input impedance in speech mode (IL > 15 mA):RRINGSP = Vring (S1 = closed) Iring 5) Ring detector enable: detecting VRFDO, when driving VMP from 0.7 V to 3.3 V (VMPON) and back again (VMPOFF) (S5, S3 = closed) V 20 V V 19 26 IRING VRING 1.5 V VRING 18 27 680 kW 17 28 SD103A BC556 68 nF 16 29 DC S1 S2 ramp VRFDO 20 25 S3 DC IRING 21 24 100 nF VSAI 1.8 Vpp 1 kHz 22 23 RGSA DC 20.6 V S4 1 mF 94 9138 1) Max. output power: PSA = U4090B Figure 24. Ringing power converter TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 1 Preliminary Information 3 VMIC S1 42 4 41 68 nF VL 5 40 RGR V 6 39 RDC 10 mF 8 37 ZEAR 4.7 nF 7 38 10 mF Output power: PSA = VSAO RSAO Attenuation of transmit gain: S1 = closed Open pins should be connected as shown in figure 25 2 Gain from SAI to SAO: 20*log (VSAO / VSAI) dB Input impedance: (VZIN/(VSAO – VZIN)) * RIN RGT 2 43 1m F 10 W 600 W 22 m F 9 36 33 11 IL 50 W 47 m F V 13 32 1000m F 12 U4090B 34 220 m F 10 35 62 kW IMP 15 30 16 29 10 mF VSAO, S4 = closed VZIN, S4 = open n SA 47 m F 14 31 10 mF 17 28 18 27 19 26 VLIDET off IINLDR IINLDT V 20 25 S4 20 kW V 1mF 21 24 220 nF VATAFS 44 220 nF 150 nF VM 22 23 RGSA VSAI 94 9137 Mico 30 k W U4090B Figure 25. Speaker amplifier 31 (34) 2 1 RGT 43 44 5 40 68 nF Vpd 4 41 open 32 (34) Preliminary Information VMP 8 37 RDC 10m F 7 6 Ipd 38 39 ZEAR IL Open pins should be connected as shown in figure 25 3 42 RGR 10m F VM 10 W V 10 35 4.7 nF 9 36 IMUTR 33 IM VL m 12 m 1000 F 220 F 11 U4090B 34 100 m F VMP 13 32 m 47 F 14 31 62 kW 15 30 IMP 16 29 17 28 18 27 19 26 21 VMP 22 23 RGSA 24 IIMPSEL 20 25 IMUTX VMP m 94 9139 1 F U4090B Figure 26. Input characteristics of io-ports TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Ordering Information Type U4090B-FN Package SSO44 Dimensions in mm Package: SSO44 94 8888 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 33 (34) Preliminary Information U4090B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 34 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96