M29W008T M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W008T and M29W008B are replaced respectively by the M29W008AT and M29W008AB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code, M29W008T: D2h – Device Code, M29W008B: DCh TSOP40 (N) 10 x 20 mm Figure 1. Logic Diagram DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in June 1999 This is information on a product still in production but not recommended for new designs. VCC 20 8 A0-A19 DQ0-DQ7 W E M29W008T M29W008B RB G RP VSS AI02189 1/30 M29W008T, M29W008B Figure 2. TSOP Pin Connections A16 A15 A14 A13 A12 A11 A9 A8 W RP NC RB A18 A7 A6 A5 A4 A3 A2 A1 1 10 11 Table 1. Signal Names A17 VSS NC A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 G VSS E A0 40 M29W008T M29W008B 31 30 20 21 AI02190 Warning: NC = Not Connected. DESCRIPTION (Cont’d) the application. Each block can be programmed and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase A0-A19 Address Inputs DQ0-DQ7 Data Input/Outputs, Command Inputs E Chip Enable G Output Enable W Write Enable RP Reset / Block Temporary Unprotect RB Ready/Busy Output VCC Supply Voltage VSS Ground Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The device is offered in TSOP40 (10 x 20mm) package. Organisation The M29W008 is organised as 1Mb x 8. The memory uses the address inputs A0-A19 and the Data Input/Outputs DQ0-DQ7. Memory control is provided by Chip Enable E, Output Enable G and Write Enable W inputs. A Reset/Block Temporary Unprotection RP tri-level input provides a hardware reset when pulled Low, and when held High (at VID) temporarily unprotects blocks previously protected allowing them to be programed and erased. Erase and Program operations are controlled by an internal Program/Erase Controller (P/E.C.). Status Register data output on DQ7 provides a Data Polling signal, and DQ6 and DQ2 provide Toggle signals to indicate the state of the P/E.C operations. A Ready/Busy RB output indicates the completion of the internal algorithms. Table 2. Absolute Maximum Ratings (1) Symbol Parameter TA Ambient Operating Temperature Value (3) Unit –40 to 85 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C Input or Output Voltages –0.6 to 5 V Supply Voltage –0.6 to 5 V A9, E, G, RP Voltage –0.6 to 13.5 V VIO (2) VCC V(A9, E, G, RP) (2) Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. 3. Depends on range. 2/30 M29W008T, M29W008B Memory Blocks The devices feature asymmetrically blocked architecture providing system memory integration. Both M29W008T and M29W008B devices have an array of 19 blocks, one Boot Block of 16 Kbytes, two Parameter Blocks of 8 Kbytes, one Main Block of 32 Kbytes and fifteen Main Blocks of 64 Kbytes. The M29W008T has the Boot Block at the top of the memory address space and the M29W008B locates the Boot Block starting at the bottom. The memory maps are showed in Figure 3. Each block can be erased separately, any combination of blocks can be specified for multi-block erase or the entire chip may be erased. The Erase operations are managed automatically by the P/E.C. The block erase operation can be suspended in order to read from or program to any block not being ersased, and then resumed. Block protection provides additional data security. Each block can be separately protected or unprotected against Program or Erase on programming equipment. All previously protected blocks can be temporarily unprotected in the application. Bus Operations The following operations can be performed using the appropriate bus cycles: Read (Array, Electronic Signature, Block Protection Status), Write command, Output Disable, Standby, Reset, Block Prot e ct i on , U n pr ot e ct ion , Pro t ect ion Ve rif y, Unprotection Verify and Block Temporary Unprotection. See Tables 4 and 5. Command Interface Instructions, made up of commands written in cycles, can be given to the Program/Erase Controller through a Command Interface (C.I.). For added data protection, program or erase execution starts after 4 or 6 cycles. The first, second, fourth and fifth cycles are used to input Coded cycles to the C.I. This Coded sequence is the same for all Program/Erase Controller instructions. The ’Command’ itself and its confirmation, when applicable, are given on the third, fourth or sixth cycles. Any incorrect command or any improper command sequence will reset the device to Read Array mode. Instructions Seven instructions are defined to perform Read Array, Auto Select (to read the Electronic Signature or Block Protection Status), Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. The internal P/E.C. automatically handles all timing and verification of the Program and Erase operations. The Status Register Data Polling, Toggle, Error bits and the RB output may be read at any time, during programming or erase, to monitor the progress of the operation. Instructions are composed of up to six cycles. The first two cycles input a Coded sequence to the Command Interface which is common to all instructions (see Table 8). The third cycle inputs the instruction set-up command. Subsequent cycles output the addressed data, Electronic Signature or Block Protection Status for Read operations. In order to give additional data protection, the instructions for Program and Block or Chip Erase require further command inputs. For a Program instruction, the fourth command cycle inputs the address and data to be programmed. For an Erase instruction (Block or Chip), the fourth and fifth cycles input a further Coded sequence before the Erase confirm command on the sixth cycle. Erasure of a memory block may be suspended, in order to read data from another block or to program data in another block, and then resumed. When power is first applied or if Vcc falls below VLKO, the command interface is reset to Read Array. SIGNAL DESCRIPTIONS See Figure 1 and Table 1. Address Inputs (A0-A19). The address inputs for the memory array are latched during a write operation on the falling edge of Chip Enable E or Write Enable W. When A9 is raised to VID, either a Read Electronic Signature Manufacturer or Device Code, Block Protection Status or a Write Block Protection or Block Unprotection is enabled depending on the combination of levels on A0, A1, A12 and A15. Data Input/Outputs (DQ0-DQ7). The input is data to be programmed in the memory array or a command to be written to the C.I. Both are latched on the rising edge of Chip Enable E or Write Enable W. The output is data from the Memory Array, the Electronic Signature Manufacturer or Device codes, the Block Protection Status or the Status register Data Polling bit DQ7, the Toggle Bits DQ6 and DQ2, the Error bit DQ5 or the Erase Timer bit DQ3. Outputs are valid when Chip Enable E and Output Enable G are active. The output is high impedance when the chip is deselected or the outputs are disabled and when RP is at a Low level. Chip Enable (E). The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. E High deselects the memory and reduces the power consumption to the standby level. E can also be used to control writing to the command register and to the memory array, while W remains at a low level. The Chip Enable must be forced to VID during the Block Unprotection operation. 3/30 M29W008T, M29W008B Figure 3A. Top Boot Block Memory Map and Block Address Table TOP BOOT BLOCK Byte-Wide Byte-Wide FFFFFh FFFFFh 16K BOOT BLOCK F0000h EFFFFh FC000h FBFFFh 64K MAIN BLOCK 8K PARAMETER BLOCK E0000h DFFFFh FA000h F9FFFh 64K MAIN BLOCK 8K PARAMETER BLOCK D0000h CFFFFh F8000h F7FFFh 64K MAIN BLOCK C0000h BFFFFh 32K MAIN BLOCK F0000h 64K MAIN BLOCK B0000h AFFFFh 64K MAIN BLOCK A0000h 9FFFFh 64K MAIN BLOCK 90000h 8FFFFh 64K MAIN BLOCK 80000h 7FFFFh 64K MAIN BLOCK 70000h 6FFFFh 64K MAIN BLOCK 60000h 5FFFFh 64K MAIN BLOCK 50000h 4FFFFh 64K MAIN BLOCK 40000h 3FFFFh 64K MAIN BLOCK 30000h 2FFFFh 64K MAIN BLOCK 20000h 1FFFFh 64K MAIN BLOCK 10000h 0FFFFh 64K MAIN BLOCK 00000h AI02135 4/30 M29W008T, M29W008B Figure 3B. Bottom Boot Block Memory Map and Block Address Table BOTTOM BOOT BLOCK Byte-Wide FFFFFh 64K MAIN BLOCK F0000h EFFFFh 64K MAIN BLOCK E0000h DFFFFh 64K MAIN BLOCK D0000h CFFFFh 64K MAIN BLOCK C0000h BFFFFh 64K MAIN BLOCK B0000h AFFFFh 64K MAIN BLOCK A0000h 9FFFFh 64K MAIN BLOCK 90000h 8FFFFh 64K MAIN BLOCK 80000h 7FFFFh 64K MAIN BLOCK 70000h 6FFFFh 64K MAIN BLOCK 60000h 5FFFFh 64K MAIN BLOCK 50000h 4FFFFh Byte-Wide 64K MAIN BLOCK 40000h 3FFFFh 0FFFFh 64K MAIN BLOCK 32K MAIN BLOCK 30000h 2FFFFh 08000h 07FFFh 64K MAIN BLOCK 8K PARAMETER BLOCK 20000h 1FFFFh 06000h 05FFFh 64K MAIN BLOCK 8K PARAMETER BLOCK 10000h 0FFFFh 04000h 03FFFh 16K BOOT BLOCK 00000h 00000h AI02136 5/30 M29W008T, M29W008B Table 3A. M29W008T Block Address Table Address Range A19 A18 A17 A16 A15 A14 A13 00000h-0FFFFh 0 0 0 0 X X X 10000h-1FFFFh 0 0 0 1 X X X 20000h-2FFFFh 0 0 1 0 X X X 30000h-3FFFFh 0 0 1 1 X X X 40000h-4FFFFh 0 1 0 0 X X X 50000h-5FFFFh 0 1 0 1 X X X 60000h-6FFFFh 0 1 1 0 X X X 70000h-7FFFFh 0 1 1 1 X X X 80000h-8FFFFh 1 0 0 0 X X X 90000h-9FFFFh 1 0 0 1 X X X A0000h-AFFFFh 1 0 1 0 X X X B0000h-BFFFFh 1 0 1 1 X X X C0000h-CFFFFh 1 1 0 0 X X X D0000h-DFFFFh 1 1 0 1 X X X E0000h-EFFFFh 1 1 1 0 X X X F0000h-F7FFFh 1 1 1 1 0 X X F8000h-F9FFFh 1 1 1 1 1 0 0 FA000h-FBFFFh 1 1 1 1 1 0 1 FC000h-FFFFFh 1 1 1 1 1 1 X Output Enable (G). The Output Enable gates the outputs through the data buffers during a read operation. When G is High the outputs are High impedance. G must be forced to VID level during Block Protection and Unprotection operations. Write Enable (W). This input controls writing to the Command Register and Address and Data latches. Ready/Busy Output (RB). Ready/Busy is an open-drain output and gives the internal state of the P/E.C. of the device. When RB is Low, the device is Busy with a Program or Erase operation and it will not accept any additional program or erase instructions except the Erase Suspend instruction. 6/30 When RB is High, the device is ready for any Read, Program or Erase operation. The RB will also be High when the memory is put in Erase Suspend or Standby modes. Reset/Block Temporary Unprotect Input (RP). The RP Input provides hardware reset and protected block(s) temporary unprotection functions. Reset of the memory is acheived by pulling RP to VIL for at least tPLPX. When the reset pulse is given, if the memory is in Read or Standby modes, it will be available for new operations in tPHEL after the rising edge of RP. M29W008T, M29W008B Table 3B. M29W008B Block Address Table Address Range A19 A18 A17 A16 A15 A14 A13 00000h-03FFFh 0 0 0 0 0 0 X 04000h-05FFFh 0 0 0 0 0 1 0 06000h-07FFFh 0 0 0 0 0 1 1 08000h-0FFFFh 0 0 0 0 1 X X 10000h-1FFFFh 0 0 0 1 X X X 20000h-2FFFFh 0 0 1 0 X X X 30000h-3FFFFh 0 0 1 1 X X X 40000h-4FFFFh 0 1 0 0 X X X 50000h-5FFFFh 0 1 0 1 X X X 60000h-6FFFFh 0 1 1 0 X X X 70000h-7FFFFh 0 1 1 1 X X X 80000h-8FFFFh 1 0 0 0 1 X X 90000h-9FFFFh 1 0 0 1 X X X A0000h-AFFFFh 1 0 1 0 X X X B0000h-BFFFFh 1 0 1 1 X X X C0000h-CFFFFh 1 1 0 0 X X X D0000h-DFFFFh 1 1 0 1 X X X E0000h-6FFFFh 1 1 1 0 X X X F0000h-FFFFFh 1 1 1 1 X X X If the memory is in Erase, Erase Suspend or Program modes the reset will take tPLYH during which the RB signal will be held at VIL. The end of the memory reset will be indicated by the rising edge of RB. A hardware reset during an Erase or Program operation will corrupt the data being programmed or the sector(s) being erased. See Table 14 and Figure 9. Temporary block unprotection is made by holding RP at VID. In this condition previously protected blocks can be programmed or erased. The transition of RP from VIH to VID must slower than tPHPHH. (See Table 15 and Figure 9). When RP is returned from VID to VIH all blocks temporarily unprotected will be again protected. VCC Supply Voltage. The power supply for all operations (Read, Program and Erase). VSS Ground. VSS is the reference for all voltage measurements. 7/30 M29W008T, M29W008B DEVICE OPERATIONS See Tables 4, 5 and 6. Read. Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register or the Block Protection Status. Both Chip Enable E and Output Enable G must be low in order to read the output of the memory. Write. Write operations are used to give Instruction Commands to the memory or to latch input data to be programmed. A write operation is initiated when Chip Enable E is Low and Write Enable W is Low with Output Enable G High. Addresses are latched on the falling edge of W or E whichever occurs last. Commands and Input Data are latched on the rising edge of W or E whichever occurs first. Output Disable. The data outputs are high impedance when the Output Enable G is High with Write Enable W High. Standby. The memory is in standby when Chip Enable E is High and the P/E.C. is idle. The power consumption is reduced to the standby level and the outputs are high impedance, independent of the Output Enable G or Write Enable W inputs. Automatic Standby. After 150ns of bus inactivity and when CMOS levels are driving the addresses, the chip automatically enters a pseudo-standby mode where consumption is reduced to the CMOS standby value, while outputs still drive the bus. Electronic Signature. Two codes identifying the manufacturer and the device can be read from the memory. The manufacturer’s code for STMicroelectronics is 20h, the device code is D2h for the M2 9W 008 T (Top Bo ot ) an d DC h f or t h e M29W008B (Bottom Boot). These codes allow programming equipment or applications to automatically match their interface to the characteristics of the M29W008. The Electronic Signature is output by a Read operation when the voltage applied to A9 is at VID and address inputs A1 is Low. The manufacturer code is output when the Address input A0 is Low and the device code when this input is High. Other Address inputs are ignored. The 8/30 Electronic Signature can also be read, without raising A9 to VID, by giving the memory the Instruction AS. Block Protection. Each block can be separately protected against Program or Erase on programming equipment. Block protection provides additional data security, as it disables all program or erase operations. This mode is activated when both A9 and G are raised to VID and an address in the block is applied on A13-A19. Block protection is initiated on the edge of W falling to VIL. Then after a delay of 100µs, the edge of W rising to VIH ends the protection operations. Block protection verify is achieved by bringing G, E, A0 and A6 to VIL and A1 to VIH, while W is at VIH and A9 at VID. Under these conditions, reading the data output will yield 01h if the block defined by the inputs on A13-A19 is protected. Any attempt to program or erase a protected block will be ignored by the device. Block Temporary Unprotection. Any previously protected block can be temporarily unprotected in order to change stored data. The temporary unprotection mode is activated by bringing RP to VID. During the temporary unprotection mode the previously protected blocks are unprotected. A block can be selected and data can be modified by executing the Erase or Program instruction with the RP signal held at VID. When RP is returned to VIH, all the previously protected blocks are again protected. Block Unprotection. All protected blocks can be unprotected on programming equipment to allow updating of bit contents. All blocks must first be protected before the unprotection operation. Block unprotection is activated when A9, G and E are at VID and A12, A15 at VIH. Unprotection is initiated by the edge of W falling to VIL. After a delay of 10ms, the unprotection operation will end. Unprotection verify is achieved by bringing G and E to VIL while A0 is at VIL, A6 and A1 are at VIH and A9 remains at VID. In these conditions, reading the output data will yield 00h if the block defined by the inputs A13-A19 has been succesfully unprotected. Each block must be separately verified by giving its address in order to ensure that it has been unprotected. M29W008T, M29W008B Table 4. User Bus Operations (1) Operation E G W RP A0 A1 A6 A9 A12 A15 DQ0-DQ7 Read Byte VIL VIL VIH VIH A0 A1 A6 A9 A12 A15 Data Output Write Byte VIL VIH VIL VIH A0 A1 A6 A9 A12 A15 Data Input Output Disable VIL VIH VIH VIH X X X X X X Hi-Z Standby VIH X X VIH X X X X X X Hi-Z X X X VIL X X X X X X Hi-Z Block Protection(2,4) VIL VID VIL Pulse VIH X X X VID X X X Blocks Unprotection(4) VID VID VIL Pulse VIH X X X VID VIH VIH X Block Protection Verify(2,4) VIL VIL VIH VIH VIL VIH VIL VID A12 A15 Block Protect Status (3) Block Unprotection Verify(2,4) VIL VIL VIH VIH VIL VIH VIH VID A12 A15 Block Protect Status (3) Block Temporary Unprotection X X X VID X X X X X X X Reset Notes: 1. 2. 3. 4. X = VIL or VIH Block Address must be given on A13-A19 bits. See Table 6. Operation performed on programming equipment. Table 5. Read Electronic Signature (following AS instruction or with A9 = VID) E G W A0 A1 Other Addresses DQ0DQ7 VIL VIL VIH VIL VIL Don’t Care 20h M29W008T VIL VIL VIH VIH VIL Don’t Care D2h M29W008B VIL VIL VIH VIH VIL Don’t Care DCh Code Device Manufact. Code Device Code Table 6. Read Block Protection with AS Instruction E G W A0 A1 A13-A19 Other Addresses DQ0-DQ7 Protected Block VIL VIL VIH VIL VIH Block Address Don’t Care 01h Unprotected Block VIL VIL VIH VIL VIH Block Address Don’t Care 00h Code 9/30 M29W008T, M29W008B INSTRUCTIONS AND COMMANDS The Command Interface latches commands written to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Protection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made of address and data sequences. The instructions require from 1 to 6 cycles, the first or first three of which are always write operations used to initiate the instruction. They are followed by either further write cycles to confirm the first command or execute the command immediately. Command sequencing must be followed exactly. Any invalid combination of commands will reset the device to Read Array. The increased number of cycles has been chosen to assure maximum data security. Instructions are initialised by two initial Coded cycles which unlock the Command Interface. In addition, for Erase, instruction confirmation is again preceded by the two Coded cycles. Status Register Bits P/E.C. status is indicated during execution by Data Polling on DQ7, detection of Toggle on DQ6 and DQ2, or Error on DQ5 and Erase Timer DQ3 bits. Any read attempt during Program or Erase command execution will automatically output these five Status Register bits. The P/E.C. automatically sets Table 7. Commands Hex Code 10/30 Command 00h Invalid/Reserved 10h Chip Erase Confirm 20h Reserved 30h Block Erase Resume/Confirm 80h Set-up Erase 90h Read Electronic Signature/ Block Protection Status A0h Program B0h Erase Suspend F0h Read Array/Reset bits DQ2, DQ3, DQ5, DQ6 and DQ7. Other bits (DQ0, DQ1 and DQ4) are reserved for future use and should be masked. See Tables 9 and 10. Data Polling Bit (DQ7). When Programming operations are in progress, this bit outputs the complement of the bit being programmed on DQ7. During Erase operation, it outputs a ’0’. After completion of the operation, DQ7 will output the bit last programmed or a ’1’ after erasing. Data Polling is valid and only effective during P/E.C. operation, that is after the fourth W pulse for programming or after the sixth W pulse for erase. It must be performed at the address being programmed or at an address within the block being erased. If all the blocks selected for erasure are protected, DQ7 will be set to ’0’ for about 100µs, and then return to the previous addressed memory data value. See Figure 11 for the Data Polling flowchart and Figure 10 for the Data Polling waveforms. DQ7 will also flag the Erase Suspend mode by switching from ’0’ to ’1’ at the start of the Erase Suspend. In order to monitor DQ7 in the Erase Suspend mode an address within a block being erased must be provided. For a Read Operation in Erase Suspend mode, DQ7 will output ’1’ if the read is attempted on a block being erased and the data value on other blocks. During Program operation in Erase Suspend Mode, DQ7 will have the same behaviour as in the normal program execution outside of the suspend mode. Toggle Bit (DQ6). When Programming or Erasing operations are in progress, successive attempts to read DQ6 will output complementary data. DQ6 will toggle following toggling of either G, or E when G is low. The operation is completed when two successive reads yield the same output data. The next read will output the bit last programmed or a ’1’ after erasing. The toggle bit DQ6 is valid only during P/E.C. operations, that is after the fourth W pulse for programming or after the sixth W pulse for Erase. If the blocks selected for erasure are protected, DQ6 will toggle for about 100µs and then return back to Read. DQ6 will be set to ’1’ if a Read operation is attempted on an Erase Suspend block. When erase is suspended DQ6 will toggle during programming operations in a block different to the block in Erase Suspend. Either E or G toggling will cause DQ6 to toggle. See Figure 12 for Toggle Bit flowchart and Figure 13 for Toggle Bit waveforms. M29W008T, M29W008B Table 8. Instructions (1) Mne. RD (2,4) Instr. Read/Reset Memory Array Cyc. 1+ 1st Cyc. 2nd Cyc. 3rd Cyc. Addr. (3,7) Data 3+ Addr. (3,7) Addr. Auto Select (3,7) Addr. (3,7) Program Block Erase 6 Addr. (3,7) Data CE Chip Erase 6 Addr. (3,7) Data ES (10) ER Erase Suspend Erase Resume 5555h 2AAAh 5555h AAh 55h F0h 5555h 2AAAh 5555h AAh 55h 90h 5555h 2AAAh 5555h AAh 55h A0h 5555h 2AAAh 5555h 5555h 2AAAh AAh 55h 80h AAh 55h 30h 5555h 2AAAh 5555h 5555h 2AAAh 5555h AAh 55h 80h AAh 55h 10h 4 Data BE 1 Addr. (3,7) Data 1 Addr. Data 6th Cyc. 7th Cyc. Read Memory Array until a new write cycle is initiated. 3+ Data PG 5th Cyc. F0h Data AS (4) X 4th Cyc. X B0h (3,7) X 30h Read Memory Array until a new write cycle is initiated. Read Electronic Signature or Block Protection Status until a new write cycle is initiated. See Note 5 and 6. Program Address Read Data Polling or Toggle Bit until Program completes. Program Data Block Additional Address Block (8) 30h Note 9 Read until Toggle stops, then read all the data needed from any Block(s) not being erased then Resume Erase. Read Data Polling or Toggle Bits until Erase completes or Erase is suspended another time Notes: 1. Commands not interpreted in this table will default to read array mode. 2. A wait of tPLYH is necessary after a Read/Reset command if the memory was in an Erase or Program mode before starting any new operation. (See Table 14 and Figure 9). 3. X = Don’t Care. 4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the command cycles. 5. Signature Address bits A0, A1 at VIL will output Manufacturer code (20h). Address bits A0 at VIH and A1 at VIL will output Device code. 6. Block Protection Address: A0 at VIL, A1 at VIH and A13-A19 within the Block will output the Block Protection status. 7. For Coded cycles address inputs A15-A19 are don’t care. 8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry, timeout status can be verified through DQ3 value (see Erase Timer Bit DQ3 description). When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended. 9. Read Data Polling, Toggle bits or RB until Erase completes. 10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased. 11/30 M29W008T, M29W008B Table 9. Status Register Bits DQ 7 Name Data Polling Logic Level ’1’ Erase Complete or erase block in Erase Suspend ’0’ Erase On-going DQ Program Complete or data of non erase block during Erase Suspend DQ Program On-going ’-1-0-1-0-1-0-1-’ 6 Toggle Bit DQ ’-1-1-1-1-1-1-1-’ 5 4 3 Error Bit Erase or Program On-going Program Complete Erase Complete or Erase Suspend on currently addressed block Note Indicates the P/E.C. status, check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success. Successive reads output complementary data on DQ6 while Programming or Erase operations are on-going. DQ6 remains at constant level when P/E.C. operations are completed or Erase Suspend is acknowledged. ’1’ Program or Erase Error ’0’ Program or Erase On-going ’1’ Erase Timeout Period Expired P/E.C. Erase operation has started. Only possible command entry is Erase Suspend (ES). ’0’ Erase Timeout Period On-going An additional block to be erased in parallel can be entered to the P/E.C. This bit is set to ’1’ in the case of Programming or Erase failure. Reserved Erase Time Bit ’-1-0-1-0-1-0-1-’ 2 Definition Toggle Bit 1 DQ 1 Reserved 0 Reserved Chip Erase, Erase or Erase Suspend on the currently addressed block. Erase Error due to the currently addressed block (when DQ5 = ’1’). Indicates the erase status and allows to identify the erased block Program on-going, Erase on-going on another block or Erase Complete Erase Suspend read on non Erase Suspend block Notes: Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations. 12/30 M29W008T, M29W008B Table 10. Polling and Toggle Bits Mode DQ7 DQ6 DQ2 DQ7 Toggle 1 Erase 0 Toggle Note 1 Erase Suspend Read (in Erase Suspend block) 1 1 Toggle Erase Suspend Read (outside Erase Suspend block) DQ7 DQ6 DQ2 Erase Suspend Program DQ7 Toggle N/A Program Note: 1. Toggle if the address is within a block being erased. ’1’ if the address is within a block not being erased. Toggle Bit (DQ2). This toggle bit, together with DQ6, can be used to determine the device status during the Erase operations. It can also be used to identify the block being erased. During Erase or Erase Suspend a read from a block being erased will cause DQ2 to toggle. A read from a block not being erased will set DQ2 to ’1’ during erase and to DQ2 during Erase Suspend. During Chip Erase a read operation will cause DQ2 to toggle as all blocks are being erased. DQ2 will be set to ’1’ during program operation and when erase is complete. After erase completion and if the error bit DQ5 is set to ’1’, DQ2 will toggle if the faulty block is addressed. Error Bit (DQ5). This bit is set to ’1’ by the P/E.C. when there is a failure of programming, block erase, or chip erase that results in invalid data in the memory block. In case of an error in block erase or program, the block in which the error occured or to which the programmed data belongs, must be discarded. The DQ5 failure condition will also appear if a user tries to program a ’1’ to a location that is previously programmed to ’0’. Other Blocks may still be used. The error bit resets after a Read/Reset (RD) instruction. In case of success of Program or Erase, the error bit will be set to ’0’ . Erase Timer Bit (DQ3). This bit is set to ’0’ by the P/E.C. when the last block Erase command has been entered to the Command Interface and it is awaiting the Erase start. When the erase timeout period is finished, after 50µs to 90µs, DQ3 returns to ’1’. Coded Cycles confirmation command. The Coded cycles consist of writing the data AAh at address 5555h during the first cycle. During the second cycle the Coded cycles consist of writing the data 55h at address 2AAAh. A0 to A15 are valid, other address lines are ’don’t care’. The Coded cycles happen on first and second cycles of the command write or on the fourth and fifth cycles. Instructions See Table 8. Read/Reset (RD) Instruction. The Read/Reset instruction consists of one write cycle giving the command F0h. It can be optionally preceded by the two Coded cycles. Subsequent read operations will read the memory array addressed and output the data read. A wait state of 10µs is necessary after Read/Reset prior to any valid read if the memory was in an Erase mode when the RD instruction is given. Auto Select (AS) Instruction. This instruction uses the two Coded cycles followed by one write cycle giving the command 90h to address 555h for command set-up. A subsequent read will output the manufacturer code and the device code or the block protection status depending on the levels of A0 and A1. The manufacturer code, 20h, is output when the addresses lines A0 and A1 are Low, the device code, EAh for Top Boot, EBh for Bottom Boot is output when A0 is High with A1 Low. The AS instruction also allows access to the block protection status. After giving the AS instruction, A0 and A6 are set to VIL with A1 at VIH, while A13-A19 define the address of the block to be verified. A read in these conditions will output a 01h if the block is protected and a 00h if the block is not protected. Program (PG) Instruction. This instruction uses four write cycles. The Program command A0h is written to address 5555h on the third cycle after two Coded cycles. A fourth write operation latches the Address on the falling edge of W or E and the Data to be written on the rising edge and starts the P/E.C. Read operations output the Status Register bits after the programming has started. Memory programming is made only by writing ’0’ in place of ’1’. Status bits DQ6 and DQ7 determine if programming is on-going and DQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. In this case, DQ2 will toggle at the address being programmed. The two Coded cycles unlock the Command Interface. They are followed by an input command or a 13/30 M29W008T, M29W008B Table 11. AC Measurement Conditions Figure 5. AC Testing Load Circuit Input Rise and Fall Times ≤ 10ns Input Pulse Voltages 0 to 3V Input and Output Timing Ref. Voltages 0.8V 1N914 1.5V Figure 4. AC Testing Input Output Waveform 3.3kΩ DEVICE UNDER TEST 3V OUT CL = 30pF or 100pF 1.5V 0V CL includes JIG capacitance AI01417 AI01968 Table 12. Capacitance (1) (TA = 25 °C, f = 1 MHz ) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition Min Max Unit VIN = 0V 6 pF VOUT = 0V 12 pF Note: 1. Sampled only, not 100% tested. Table 13. DC Characteristics (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C; VCC = 2.7V to 3.6V) Symbol Parameter ILI Input Leakage Current ILO Output Leakage Current ICC1 Supply Current (Read) Byte ICC3 Supply Current (Standby) ICC4 (1) Supply Current (Program or Erase) Test Condition Min Max Unit 0V ≤ VIN ≤ VCC ±1 µA 0V ≤ VOUT ≤ VCC ±1 µA E = VIL, G = VIH, f = 6MHz 10 mA E = VCC ± 0.2V 100 µA Byte program, Block or Chip Erase in progress 20 mA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 0.7 VCC VCC + 0.3 V VOL Output Low Voltage 0.45 V VOH Output High Voltage CMOS VID A9 Voltage (Electronic Signature) IID A9 Current (Electronic Signature) VLKO Supply Voltage (Erase and Program lock-out) Note: 1. Sampled only, not 100% tested. 14/30 IOL = 1.8mA IOH = –100µA VCC –0.4V 11.5 A9 = VID 2.0 V 12.5 V 100 µA 2.3 V M29W008T, M29W008B Table 14A. Read AC Characteristics (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol Alt Parameter Test Condition -90 -100 VCC = 3.0V to 3.6V CL = 30pF VCC = 2.7V to 3.6V CL = 30pF Min tAVAV tRC Address Valid to Next Address Valid E = VIL, G = VIL tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL tELQV (2) tCE Chip Enable Low to Output Valid G = VIL tGLQX (1) tOLZ Output Enable Low to Output Transition E = VIL tGLQV (2) tOE Output Enable Low to Output Valid E = VIL tEHQX tOH Chip Enable High to Output Transition G = VIL tEHQZ (1) tHZ Chip Enable High to Output Hi-Z G = VIL tGHQX tOH Output Enable High to Output Transition E = VIL tGHQZ (1) tDF Output Enable High to Output Hi-Z E = VIL tAXQX tOH Address Transition to Output Transition E = VIL, G = VIL tPLYH (1,3) Max 90 Min Unit Max 100 90 0 ns 100 0 90 0 ns 100 0 35 0 40 30 0 0 tRRB RP Low to Read Mode tREADY ns ns 30 0 10 ns ns 30 30 ns ns 0 0 ns ns ns 10 µs tPHEL tRH RP High to Chip Enable Low 50 50 ns tPLPX tRP RP Pulse Width 500 500 ns Notes: 1. Sampled only, not 100% tested. 2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV. 3. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program mode. 15/30 M29W008T, M29W008B Table 14B. Read AC Characteristics (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol Alt Parameter Test Condition -120 -150 VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V Min tAVAV tRC Address Valid to Next Address Valid E = VIL, G = VIL tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL tELQV (2) tCE Chip Enable Low to Output Valid G = VIL tGLQX (1) tOLZ Output Enable Low to Output Transition E = VIL tGLQV (2) tOE Output Enable Low to Output Valid E = VIL tEHQX tOH Chip Enable High to Output Transition G = VIL tEHQZ (1) tHZ Chip Enable High to Output Hi-Z G = VIL tGHQX tOH Output Enable High to Output Transition E = VIL tGHQZ (1) tDF Output Enable High to Output Hi-Z E = VIL tAXQX tOH Address Transition to Output Transition E = VIL, G = VIL tPLYH (1,3) Max 120 Min Unit Max 150 120 0 ns 150 0 120 0 ns 150 0 50 0 55 30 0 0 tRRB RP Low to Read Mode tREADY ns ns 40 0 10 ns ns 40 30 ns ns 0 0 ns ns ns 10 µs tPHEL tRH RP High to Chip Enable Low 50 50 ns tPLPX tRP RP Pulse Width 500 500 ns Notes: 1. Sampled only, not 100% tested. 2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV. 3. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program mode. 16/30 Note: Write Enable (W) = High. DQ0-DQ7 G E A0-A19 ADDRESS VALID AND CHIP ENABLE tAVQV tGLQV OUTPUT ENABLE tGLQX tELQX tELQV VALID tAVAV DATA VALID VALID tGHQZ tGHQX tEHQX tEHQZ tAXQX AI02191 M29W008T, M29W008B Figure 6. Read Mode AC Waveforms 17/30 M29W008T, M29W008B Table 15A. Write AC Characteristics, Write Enable Controlled (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol Alt -90 -100 VCC = 3.0V to 3.6V CL = 30pF VCC = 2.7V to 3.6V CL = 30pF Parameter Min Max Min Unit Max tAVAV tWC Address Valid to Next Address Valid 90 100 ns tELWL tCS Chip Enable Low to Write Enable Low 0 0 ns tWLWH tWP Write Enable Low to Write Enable High 45 50 ns tDVWH tDS Input Valid to Write Enable High 45 50 ns tWHDX tDH Write Enable High to Input Transition 0 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tWPH Write Enable High to Write Enable Low 30 30 ns tWHWL tAVWL tAS Address Valid to Write Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 45 50 ns Output Enable High to Write Enable Low 0 0 ns tGHWL tVCHEL tVCS VCC High to Chip Enable Low 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 0 0 ns 500 500 ns 500 500 ns tPHPHH (1,2) tPLPX tWHRL (1) tPHWL (1) tVIDR RP Rise Time to VID tRP RP Pulse Width tBUSY Program Erase Valid to RB Delay tRSP RP High to Write Enable Low 90 4 90 4 ns µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. Block Erase (BE) Instruction. This instruction uses a minimum of six write cycles. The Erase Set-up command 80h is written to address 5555h on third cycle after the two Coded cycles. The Block Erase Confirm command 30h is similarly written on the sixth cycle after another two Coded cycles. During the input of the second command an address within the block to be erased is given and latched into the memory. Additional block Erase Confirm commands and block addresses can be written subsequently to erase other blocks in parallel, without further Coded cycles. The erase will start after the erase timeout period (see Erase Timer Bit DQ3 description). Thus, additional Erase Confirm commands for other blocks must be given 18/30 within this delay. The input of a new Erase Confirm command will restart the timeout period. The status of the internal timer can be monitored through the level of DQ3, if DQ3 is ’0’ the Block Erase Command has been given and the timeout is running, if DQ3 is ’1’, the timeout has expired and the P/E.C. is erasing the Block(s). If the second command given is not an erase confirm or if the Coded cycles are wrong, the instruction aborts, and the device is reset to Read Array. It is not necessary to program the block with 00h as the P/E.C. will do this automatically before to erasing to FFh. Read operations after the sixth rising edge of W or E output the status register status bits. M29W008T, M29W008B Table 15B. Write AC Characteristics, Write Enable Controlled (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol Alt -120 -150 VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V Parameter Min tAVAV tWC Address Valid to Next Address Valid tELWL tCS tWLWH Max Min Unit Max 120 150 ns Chip Enable Low to Write Enable Low 0 0 ns tWP Write Enable Low to Write Enable High 50 65 ns tDVWH tDS Input Valid to Write Enable High 50 65 ns tWHDX tDH Write Enable High to Input Transition 0 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tWPH Write Enable High to Write Enable Low 30 35 ns tWHWL tAVWL tAS Address Valid to Write Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 50 65 ns Output Enable High to Write Enable Low 0 0 ns tGHWL tVCHEL tVCS VCC High to Chip Enable Low 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 0 0 ns 500 500 ns 500 500 ns tPHPHH (1,2) tPLPX tWHRL (1) tPHWL (1) tVIDR RP Rise Time to VID tRP RP Pulse Width tBUSY Program Erase Valid to RB Delay tRSP RP High to Write Enable Low 90 4 90 4 ns µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. During the execution of the erase by the P/E.C., the memory accepts only the Erase Suspend ES and Read/Reset RD instructions. Data Polling bit DQ7 returns ’0’ while the erasure is in progress and ’1’ when it has completed. The Toggle bit DQ2 and DQ6 toggle during the erase operation. They stop when erase is completed. After completion the Status Register bit DQ5 returns ’1’ if there has been an erase failure. In such a situation, the Toggle bit DQ2 can be used to determine which block is not correctly erased. In the case of erase failure, a Read/Reset RD instruction is necessary in order to reset the P/E.C. Chip Erase (CE) Instruction. This instruction uses six write cycles. The Erase Set-up command 80h is written to address 5555h on the third cycle after the two Coded cycles. The Chip Erase Confirm command 10h is similarly written on the sixth cycle after another two Coded cycles. If the second command given is not an erase confirm or if the Coded cycles are wrong, the instruction aborts and the device is reset to Read Array. It is not necessary to program the array with 00h first as the P/E.C. will automatically do this before erasing it to FFh. Read operations after the sixth rising edge of W or E output the Status Register bits. During the execution of the erase by the P/E.C., Data Polling bit DQ7 returns ’0’, then ’1’ on completion. The Toggle bits DQ2 and DQ6 toggle during erase operation and stop when erase is completed. After completion the Status Register bit DQ5 returns ’1’ if there has been an Erase Failure. 19/30 M29W008T, M29W008B Figure 7. Write AC Waveforms, W Controlled tAVAV A0-A19 VALID tWLAX tAVWL tWHEH E tELWL tWHGL G tGHWL tWLWH W tWHWL tDVWH DQ0-DQ7 tWHDX VALID VCC tVCHEL RB tWHRL AI02192 Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruction which consists of writing the command B0h without any specific address. No Coded cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops toggling when the P/E.C. is suspended. The Toggle bits will stop toggling between 0.1µs and 15µs after the Erase Suspend (ES) command has been written. The device will then automatically be set to Read Memory Array mode. When erase is sus- 20/30 pended, a Read from blocks being erased will output DQ2 toggling and DQ6 at ’1’. A Read from a block not being erased returns valid data. During suspension the memory will respond only to the Erase Resume ER and the Program PG instructions. A Program operation can be initiated during erase suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is being programmed. A Read/Reset command will definitively abort erasure and result in invalid data in the blocks being erased. Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously executed, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles. M29W008T, M29W008B Table 16A. Write AC Characteristics, Chip Enable Controlled (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol Alt -90 -100 VCC = 3.0V to 3.6V CL = 30pF VCC = 2.7V to 3.6V CL = 30pF Parameter Min Max Min Unit Max tAVAV tWC Address Valid to Next Address Valid 90 100 ns tWLEL tWS Write Enable Low to Chip Enable Low 0 0 ns tELEH tCP Chip Enable Low to Chip Enable High 45 50 ns tDVEH tDS Input Valid to Chip Enable High 45 50 ns tEHDX tDH Chip Enable High to Input Transition 0 0 ns tEHWH tWH Chip Enable High to Write Enable High 0 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low 30 30 ns tAVEL tAS Address Valid to Chip Enable Low 0 0 ns tELAX tAH Chip Enable Low to Address Transition 45 50 ns Output Enable High Chip Enable Low 0 0 ns tGHEL tVCHWL tVCS VCC High to Write Enable Low 50 50 µs tEHGL tOEH Chip Enable High to Output Enable Low 0 0 ns tPHPHH (1,2) tVIDR RP Rise TIme to VID 500 500 ns tPLPX tRP RP Pulse Width 500 500 ns tEHRL (1) tBUSY Program Erase Valid to RB Delay tPHWL (1) tRSP RP High to Write Enable Low 90 4 90 4 ns µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. POWER SUPPLY Power Up The memory Command Interface is reset on power up to Read Array. Either E or W must be tied to VIH during Power Up to allow maximum security and the possibility to write a command on the first rising edge of E and W. Any write cycle initiation is blocked when Vcc is below VLKO. Supply Rails Normal precautions must be taken for supply voltage decoupling; each device in a system should have the VCC rail decoupled with a 0.1µF capacitor close to the VCC and VSS pins. The PCB trace widths should be sufficient to carry the VCC program and erase currents required. 21/30 M29W008T, M29W008B Table 16B. Write AC Characteristics, Chip Enable Controlled (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol Alt -150 VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V Min tAVAV tWC Address Valid to Next Address Valid tWLEL tWS tELEH Unit -120 Parameter Max Min Max 120 150 ns Write Enable Low to Chip Enable Low 0 0 ns tCP Chip Enable Low to Chip Enable High 50 50 ns tDVEH tDS Input Valid to Chip Enable High 50 50 ns tEHDX tDH Chip Enable High to Input Transition 0 0 ns tEHWH tWH Chip Enable High to Write Enable High 0 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low 20 20 ns tAVEL tAS Address Valid to Chip Enable Low 0 0 ns tELAX tAH Chip Enable Low to Address Transition 50 50 ns Output Enable High Chip Enable Low 0 0 ns tGHEL tVCHWL tVCS VCC High to Write Enable Low 50 50 µs tEHGL tOEH Chip Enable High to Output Enable Low 0 0 ns tVIDR RP Rise TIme to VID 500 500 ns RP Pulse Width 500 500 ns tPHPHH (1,2) tPLPX tRP tEHRL (1) tBUSY Program Erase Valid to RB Delay tRSP RP High to Write Enable Low tPHWL (1) Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 22/30 90 4 90 4 ns µs M29W008T, M29W008B Figure 8. Write AC Waveforms, E Controlled tAVAV VALID A0-A19 tELAX tAVEL tEHWH W tWLEL tEHGL G tGHEL tELEH E tEHEL tDVEH DQ0-DQ7 tEHDX VALID VCC tVCHWL RB tEHRL AI02193 Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 9. Read and Write AC Characteristics, RP Related E tPHEL W tPHWL RB RP tPLPX tPHPHH tPLYH AI02091 23/30 M29W008T, M29W008B Table 17A. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol tWHQ7V tEHQ7V tQ7VQV tWHQV tEHQV -90 -100 VCC = 3.0V to 3.6V CL = 30pF VCC = 2.7V to 3.6V CL = 30pF Parameter Unit Min Max Min Max Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 60 1.0 60 sec 40 ns Q7 Valid to Output Valid (Data Polling) 35 Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Note: 1. All other timings are defined in Read AC Characteristics table. Table 17B. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) M29W008T / M29W008B Symbol tWHQ7V tEHQ7V tQ7VQV tWHQV tEHQV -150 VCC = 2.7V to 3.6V CL = 100pF VCC = 2.7V to 3.6V CL = 100pF Unit Min Max Min Max Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 60 1.0 60 sec 55 ns Q7 Valid to Output Valid (Data Polling) 50 Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Note: 1. All other timings are defined in Read AC Characteristics table. 24/30 -120 Parameter DQ0-DQ6 DQ7 W G E A0-A19 LAST WRITE CYCLE OF PROGRAM OR ERASE INSTRUCTION DATA POLLING READ CYCLES tWHQ7V tEHQ7V tELQV tAVQV tQ7VQV IGNORE DQ7 DATA POLLING (LAST) CYCLE tGLQV ADDRESS (WITHIN BLOCKS) VALID VALID DATA OUTPUT VALID AI02194 MEMORY ARRAY READ CYCLE M29W008T, M29W008B Figure 10. Data Polling DQ7 AC Waveforms 25/30 M29W008T, M29W008B Figure 11. Data Polling Flowchart Figure 12. Data Toggle Flowchart START START READ DQ2, DQ5 & DQ6 READ DQ5 & DQ7 at VALID ADDRESS DQ7 = DATA NO NO YES NO DQ5 =1 DQ5 =1 YES YES READ DQ7 DQ7 = DATA NO DQ2, DQ6 = TOGGLE YES READ DQ2, DQ6 YES DQ2, DQ6 = TOGGLE NO FAIL NO YES PASS FAIL PASS AI01369 AI01873 Table 18. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70°C; VCC = 2.7V to 3.6V) M29W008T / M29W008B Parameter Unit Typ Typical after 100k W/E Cycles Chip Erase (Preprogrammed) 5 3.3 Chip Erase 12 sec Boot Block Erase 2.4 sec Parameter Block Erase 2.3 sec Main Block (32Kb) Erase 2.7 sec Main Block (64Kb) Erase 3.3 Min Max sec 15 sec Chip Program (Byte) 8 8 sec Byte Program 10 10 µs Program/Erase Cycles (per Block) 26/30 100,000 cycles DATA TOGGLE READ CYCLE Note: All other timings are as a normal Read cycle. LAST WRITE CYCLE OF PROGRAM OF ERASE INSTRUCTION DQ0-DQ1,DQ3-DQ5,DQ7 DQ6,DQ2 W G E A0-A19 DATA TOGGLE READ CYCLE IGNORE STOP TOGGLE tWHQV tEHQV tAVQV MEMORY ARRAY READ CYCLE VALID VALID tGLQV tELQV VALID AI02195 M29W008T, M29W008B Figure 13. Data Toggle DQ6, DQ2 AC Waveforms 27/30 M29W008T, M29W008B ORDERING INFORMATION SCHEME Example: M29W008T -90 N 1 TR Operating Voltage W Option 2.7V to 3.6V Array Matrix TR Tape & Reel Packing Speed T Top Boot -90 90ns B Bottom Boot -100 100ns Temp. Range Package N TSOP40 10 x 20mm -120 120ns 1 0 to 70 °C 5 –20 to 85 °C 6 –40 to 85 °C -150 150ns M29W008T and M29W008B are replaced respectively by the new version M29W008AT and M29W008AB Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. 28/30 M29W008T, M29W008B TSOP40 Normal Pinout - 40 lead Plastic Thin Small Outline, 10 x 20mm mm Symb Typ inches Min Max A Typ Min 1.20 Max 0.047 A1 0.05 0.15 0.002 0.006 A2 0.95 1.05 0.037 0.041 B 0.17 0.27 0.007 0.011 C 0.10 0.21 0.004 0.008 D 19.80 20.20 0.780 0.795 D1 18.30 18.50 0.720 0.728 E 9.90 10.10 0.390 0.398 – – – – L 0.50 0.70 0.020 0.028 α 0° 5° 0° 5° N 40 e 0.50 0.020 40 CP 0.10 0.004 A2 1 N e E B N/2 D1 A CP D DIE C TSOP-a A1 α L Drawing is not to scale. 29/30 M29W008T, M29W008B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 30/30