STMICROELECTRONICS M36W216T

M36W216TI
M36W216BI
16 Mbit (1Mb x16, Boot Block) Flash Memory
and 2 Mbit (128Kb x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
– 16 Mbit (1Mb x 16) Boot Block Flash Memory
– 2 Mbit (128Kb x 16) SRAM
■ SUPPLY VOLTAGE
– VDDF = VDDS = 2.7V to 3.3V
– VDDQF = VDDS = 2.7V to 3.3V
SRAM
■ 2 Mbit (128K x 16 bit)
■
ACCESS TIME: 70ns
■
LOW VDDS DATA RETENTION: 1.5V
■
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
– VPPF = 12V for Fast Program (optional)
■
ACCESS TIME: 70ns, 85ns
■
LOW POWER CONSUMPTION
■
ELECTRONIC SIGNATURE
Figure 1. Packages
– Manufacturer Code: 20h
– Top Device Code, M36W216TI: 88CEh
– Bottom Device Code, M36W216BI: 88CFh
FBGA
FLASH MEMORY
■ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■
Stacked LFBGA66 (ZA)
12 x 8mm
PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
■
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■
AUTOMATIC STAND-BY MODE
■
PROGRAM and ERASE SUSPEND
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
COMMON FLASH INTERFACE
– 64 bit Security Code
■
SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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TABLE OF CONTENTS
SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 3. LFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SIGNAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Address Inputs (A0-A16). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Address Inputs (A17-A19). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Data Inputs/Outputs (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Flash Chip Enable (EF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Flash Output Enable (GF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Flash Write Enable (WF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Flash Write Protect (WPF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Flash Reset (RPF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SRAM Chip Enable (E1S, E2S). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SRAM Write Enable (WS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SRAM Output Enable (GS).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SRAM Upper Byte Enable (UBS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SRAM Lower Byte Enable (LBS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
VDDF and VDDS Supply Voltages.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
VDDQF and V DDS Supply Voltage (2.7V to 3.3V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
VPPF Program Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
VSSF and VSSS Ground.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
FUNCTIONAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 4. Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 2. Main Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 3. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 4. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 6. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 7. Stacked LFBGA66-12x8mm, 8x8 ball array, 0.8mm pitch, Bottom View Package Outline15
Table 7. Stacked LFBGA66 - 12x8mm, 8x8 ball array, 0.8 mm pitch, Package Mechanical Data . 15
Figure 8. Stacked LFBGA66 Daisy Chain - Package Connections (Top view through package) . . 16
Figure 9. Stacked LFBGA66 Daisy Chain - PCB Connections proposal (Top view through package). 17
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PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 8. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 9. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
FLASH DEVICE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
FLASH SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 10. Flash Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 11. Flash Security Block and Protection Register Memory Map . . . . . . . . . . . . . . . . . . 20
FLASH BUS OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Read.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
FLASH COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Read Memory Array Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Read Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Read CFI Query Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Clear Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Block Lock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Block Unlock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Block Lock-Down Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 10. Flash Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 11. Read Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 12. Read Block Lock Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 13. Read Protection Register and Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 14. Program, Erase Times and Program/Erase Endurance Cycles . . . . . . . . . . . . . . . . 26
FLASH BLOCK LOCKING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Reading a Block’s Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Unlocked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Lock-Down State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 15. Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 16. Protection Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
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FLASH STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Program/Erase Controller Status (Bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Erase Suspend Status (Bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Erase Status (Bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Program Status (Bit 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
VPP Status (Bit 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Program Suspend Status (Bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Block Protection Status (Bit 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Reserved (Bit 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 17. Status Register Bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 12. Flash Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 18. Flash Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 13. Flash Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . 32
Table 19. Flash Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . 33
Figure 14. Flash Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . 34
Table 20. Flash Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . 35
Figure 15. Flash Power-Up and Reset AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 21. Flash Power-Up and Reset AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
SRAM DEVICE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
SRAM SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 16. SRAM Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
SRAM OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Standby/Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 17. SRAM Read Mode AC Waveforms, Address Controlled with UBS = LBS = VIL . . . 39
Figure 18. SRAM Read AC Waveforms, GS Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 19. SRAM Standby AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 22. SRAM Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 20. SRAM Write AC Waveforms, WS Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 21. SRAM Write AC Waveforms, E1S Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 22. SRAM Write AC Waveforms, WS Controlled with GS Low . . . . . . . . . . . . . . . . . . . 43
Figure 23. SRAM Write Cycle Waveform, UBS and LBS Controlled, GS Low . . . . . . . . . . . . . 43
Table 23. SRAM Write AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS / LBS Controlled . . 45
Table 24. SRAM Low VDDS Data Retention Characteristic. . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 25. Top Boot Block Addresses, M36W216TI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 26. Bottom Boot Block Addresses, M36W216BI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
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APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 27. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 28. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 29. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 30. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 31. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 32. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
APPENDIX C. FLOWCHARTS AND PSEUDO CODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 25. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 26. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 27. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 54
Figure 28. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 29. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 30. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE . . . . . . . 59
Table 33. Write State Machine Current/Next, sheet 1 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 34. Write State Machine Current/Next, sheet 2 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 35. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5/62
M36W216TI, M36W216BI
SUMMARY DESCRIPTION
The M36W216TI is a low voltage Multiple Memory
Product which combines two memory devices; a
16 Mbit boot block Flash memory and a 2 Mbit
SRAM. Recommended operating conditions do
not allow both the Flash memory and the SRAM
memory to be active at the same time.
The memory is offered in a Stacked LFBGA66
(12x8mm, 8 x 8 active ball, 0.8 mm pitch) package
and is supplied with all the bits erased (set to ‘1’).
Figure 2. Logic Diagram
VDDQF
VDDF
VDDS
VPPF
20
16
DQ0-DQ15
A0-A19
A0-A16
Flash and SRAM Address Inputs
A17-A19
Address Inputs for Flash Chip only
DQ0-DQ15
Data Input/Output
VDDF
Flash Power Supply
VDDQF
Flash Power Supply for I/O Buffers
VPPF
Flash Optional Supply Voltage for Fast
Program & Erase
VSSF
Flash Ground
VDDS
SRAM Power Supply
VSSS
SRAM Ground
NC
Not Connected Internally
EF
Flash control functions
GF
EF
Chip Enable input
GF
Output Enable input
WF
Write Enable input
RPF
Reset input
WPF
Write Protect input
WF
RPF
WPF
M36W216TI
M36W216BI
E1S
E2S
GS
SRAM control functions
WS
E1S, E2S
Chip Enable inputs
GS
Output Enable input
WS
Write Enable input
UBS
Upper Byte Enable input
LBS
Lower Byte Enable input
UBS
LBS
VSSF
6/62
Table 1. Signal Names
VSSS
AI07903
A19
GS
A7
A4
VPPF
UBS
A17
A5
WPF
LBS
A18
NC
E
F
G
H
NC
DQ12
RPF
VSSS
D
NC
DQ13
NC
WF
C
A0
A6
DQ11
A9
A10
A8
A16
B
EF
A3
DQ9
DQ15
A13
A14
A15
A11
NC
NC
NC
A
5
4
2
3
1
#2
#1
VSSF
A2
DQ8
DQ10
E2S
DQ6
WS
A12
6
GF
A1
DQ0
DQ2
VDDS
DQ4
DQ14
VSSF
7
NC
E1S
DQ1
DQ3
VDDF
DQ5
DQ7
VDDQF
8
NC
NC
#3
NC
NC
#4
AI90254
M36W216TI, M36W216BI
Figure 3. LFBGA Connections (Top view through package)
7/62
M36W216TI, M36W216BI
SIGNAL DESCRIPTION
See Figure 2 Logic Diagram and Table 1, Signal
Names, for a brief overview of the signals connected to this device.
Address Inputs (A0-A16). Addresses
A0-A16
are common inputs for the Flash and the SRAM
components. The Address Inputs select the cells
in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command Interface
of the internal state machine. The Flash memory is
accessed through the Chip Enable ( EF) and Write
Enable (WF) signals, while the SRAM is accessed
through two Chip Enable (ES) and Write Enable
(WS) signals.
Address Inputs (A17-A19). Addresses A17-A19
are inputs for the Flash component only. The
Flash memory is accessed through the Chip Enable (EF) and Write Enable (WF) signals
Data Inputs/Outputs (DQ0-DQ15). The Data I/
O output the data stored at the selected address
during a Bus Read operation or input a command
or the data to be programmed during a Write Bus
operation.
Flash Chip Enable ( EF). The Chip Enable input
activates the Flash memory control logic, input
buffers, decoders and sense amplifiers. When
Chip Enable is at VIL and Reset is at VIH the device
is in active mode. When Chip Enable is at VIH the
memory is deselected, the outputs are high impedance and the power consumption is reduced to the
standby level.
Flash Output Enable (GF). The Output Enable
controls the data outputs during the Bus Read operation of the Flash memory.
Flash Write Enable (WF). The Write Enable controls the Bus Write operation of the Flash memory’s Command Interface. The data and address
inputs are latched on the rising edge of Chip Enable, EF, or Write Enable, WF, whichever occurs
first.
Flash Write Protect (WPF). Write Protect is an
input that gives an additional hardware protection
for each block. When Write Protect is at V IL, the
Lock-Down is enabled and the protection status of
the block cannot be changed. When Write Protect
is at V IH, the Lock-Down is disabled and the block
can be locked or unlocked. (refer to Table 6, Read
Protection Register and Protection Register Lock).
Flash Reset (RPF). The Reset input provides a
hardware reset of the Flash memory. When Reset
is at V IL, the memory is in reset mode: the outputs
are high impedance and the current consumption
is minimized. After Reset all blocks are in the
Locked state. When Reset is at V IH, the device is
in normal operation. Exiting reset mode the device
enters read array mode, but a negative transition
8/62
of Chip Enable or a change of the address is required to ensure valid data outputs.
SRAM Chip Enable (E1S, E2S). The Chip Enable inputs activate the SRAM memory control
logic, input buffers and decoders. E1 S at V IH or
E2S at VIL deselects the memory and reduces the
power consumption to the standby level. E1S or
E2S can also be used to control writing to the
SRAM memory array, while WS remains at V IL. It
is not allowed to set EF at VIL and, E1S at VIL or
E2 S at VIL at the same time.
SRAM Write Enable (WS). The Write Enable input controls writing to the SRAM memory array.
W S is active low.
SRAM Output Enable (GS). The Output Enable
gates the outputs through the data buffers during
a read operation of the SRAM memory. GS is active low.
SRAM Upper Byte Enable (UBS). The Upper
Byte Enable enables the upper bytes for SRAM
(DQ8-DQ15). UBS is active low.
SRAM Lower Byte Enable (LBS). The
Lower
Byte Enable enables the lower bytes for SRAM
(DQ0-DQ7). LBS is active low.
proVDDF and VDDS Supply Voltages. VDDF
vides the power supply to the internal core of the
Flash Memory device. It is the main power supply
for all operations (Read, Program and Erase).
VDDQF and V DDS Supply Voltage (2.7V to 3.3V).
VDDQF provides the power supply for the Flash
memory I/O pins and VDDS provides the power
supply for the SRAM control pins. This allows all
Outputs to be powered independently of the Flash
core power supply, VDDF. VDDQF can be tied to
VDDS.
VPPF Program Supply Voltage. VPPF is both a
control input and a power supply pin for the Flash
memory. The two functions are selected by the
voltage range applied to the pin. The Supply Voltage VDDF and the Program Supply Voltage VPPF
can be applied in any order.
If V PPF is kept in a low voltage range (0V to 3.6V)
VPPF is seen as a control input. In this case a voltage lower than VPPLK gives an absolute protection
against program or erase, while VPPF > VPP1 enables these functions (see Table 6, DC Characteristics for the relevant values). V PPF is only
sampled at the beginning of a program or erase; a
change in its value after the operation has started
does not have any effect and program or erase operations continue.
If VPPF is in the range 11.4V to 12.6V it acts as a
power supply pin. In this condition V PPF must be
stable until the Program/Erase algorithm is completed (see Table 19 and 20).
M36W216TI, M36W216BI
VSSF and VSSS Ground. VSSF and VSSS are the
ground reference for all voltage measurements in
the Flash and SRAM chips, respectively.
Note: Each device in a system should have V DDF, VDDQF and VPPF decoupled with a 0.1µF ca-
FUNCTIONAL DESCRIPTION
The Flash and SRAM components have separate
power supplies and grounds and are distinguished
by three chip enable inputs: EF for the Flash memory and E1S and E2S for the SRAM.
Recommended operating conditions do not allow
both the Flash and the SRAM to be in active mode
at the same time. The most common example is
pacitor close to the pin. See Figure 9, AC
Measurement Load Circuit. The PCB trace
widths should be sufficient to carry the required V PPF program and erase currents.
simultaneous read operations on the Flash and
the SRAM which would result in a data bus contention. Therefore it is recommended to put the
SRAM in the high impedance state when reading
the Flash and vice versa (see Table 2 Main Operation Modes for details).
Figure 4. Functional Block Diagram
VDDF
VDDQF
VPPF
EF
GF
WF
RPF
WPF
Flash Memory
16 Mbit (x16)
A17-A19
A0-A16
VSSF
VDDS
DQ0-DQ15
E1S
E2S
GS
SRAM
2 Mbit (x16)
WS
UBS
LBS
VSSS
AI07904
9/62
M36W216TI, M36W216BI
Table 2. Main Operation Modes
EF
GF
WF
RPF
WPF
VPPF
Read
VIL
VIL
VIH
VIH
X
Don’t care
SRAM must be disabled
Data Output
Write
VIL
VIH
VIL
VIH
X
VDDF or
VPPFH
SRAM must be disabled
Data Input
Block
Locking
VIL
X
X
VIH
VIL
Don’t care
SRAM must be disabled
X
Standby
VIH
X
X
VIH
X
Don’t care
Any SRAM mode is allowed
Hi-Z
Reset
X
X
X
VIL
X
Don’t care
Any SRAM mode is allowed
Hi-Z
Output
Disable
VIL
VIH
VIH
VIH
X
Don’t care
Any SRAM mode is allowed
Hi-Z
Flash Memory
Operation
Mode
Read
SRAM
Write
GS
WS
UBS
LBS
DQ7-DQ0 DQ15-DQ8
VIL
VIH
VIL
VIH
VIL
VIL
Data out Word Read
Flash must be disabled
VIL
VIH
VIL
VIH
VIH
VIL
Data out
Hi-Z
Flash must be disabled
VIL
VIH
VIL
VIH
VIL
VIH
Hi-Z
Data out
Flash must be disabled
VIL
VIH
X
VIL
VIL
VIL
Data in Word Write
Flash must be disabled
VIL
VIH
X
VIL
VIH
VIL
Data in
Hi-Z
Flash must be disabled
VIL
VIH
X
VIL
VIL
VIH
Hi-Z
Data in
VIH
VIL
X
X
X
X
Hi-Z
X
X
X
X
VIH
VIH
Hi-Z
VIH
VIL
X
X
X
X
Hi-Z
X
X
X
X
VIH
VIH
Hi-Z
Any Flash mode is allowable
VIL
VIH
VIH
VIH
VIL
VIL
Hi-Z
Any Flash mode is allowable
VIL
VIH
VIH
VIH
VIH
VIL
Hi-Z
Any Flash mode is allowable
VIL
VIH
VIH
VIH
VIL
VIH
Hi-Z
Any Flash mode is allowable
Data
Retention
Any Flash mode is allowable
Note: X = Don’t care = VIL or VIH, VPPFH = 12V ± 5%.
10/62
E2S
Flash must be disabled
Standby/
Power
Down
Output
Disable
E1S
M36W216TI, M36W216BI
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 3. Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
Max
Ambient Operating Temperature (1)
–40
85
°C
TBIAS
Temperature Under Bias
–40
125
°C
TSTG
Storage Temperature
–55
150
°C
Input or Output Voltage
–0.5
VDDQF +0.5
V
Flash Supply Voltage
–0.5
3.8
V
VPPF
Program Voltage
–0.6
13
V
VDDS
SRAM Supply Voltage
–0.5
3.8
V
TA
VIO
VDDF, VDDQF
Note: 1. Depends on range.
11/62
M36W216TI, M36W216BI
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are derived from tests performed under the Measure-
ment Conditions summarized in Table 4,
Operating and AC Measurement Conditions. Designers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Parameter
SRAM
Flash Memory
70
70/85
Units
Min
Max
Min
Max
VDDF Supply Voltage
–
–
2.7
3.3
V
VDDQF Supply Voltage
–
–
2.7
3.3
V
VDDS Supply Voltage
2.7
3.3
–
–
V
Ambient Operating Temperature
– 40
85
– 40
85
°C
Load Capacitance (CL)
30
Input Rise and Fall Times
50
pF
1V/ns
Input Pulse Voltages
Input and Output Timing Ref. Voltages
5ns
0 to VDDQF
0 to VDDQF
V
VDDQF/2
VDDQF/2
V
Figure 6. AC Measurement Load Circuit
Figure 5. AC Measurement I/O Waveform
VDDQF
VDDQ
VDDQ/2
VDDQF
0V
VDDF
25kΩ
AI90258
DEVICE
UNDER
TEST
Note: VDDQ means VDDQF = VDDS
CL
0.1µF
25kΩ
0.1µF
CL includes JIG capacitance
AI90259
Table 5. Device Capacitance
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Note: Sampled only, not 100% tested.
12/62
Test Condition
Typ
Max
Unit
VIN = 0V, f=1 MHz
12
pF
VOUT = 0V, f=1 MHz
15
pF
M36W216TI, M36W216BI
Table 6. DC Characteristics
Symbol
ILI
ILO
IDDS
IDDD
IDD
IDDR
IDDW
IDDE
Parameter
Input Leakage Current
Device
Test Condition
Flash & SRAM
Max
Unit
0V ≤ VIN ≤ VDDQF
±1
µA
Flash
0V ≤ VOUT ≤ VDDQF
±10
µA
SRAM
0V ≤ VOUT ≤ VDDQF,
SRAM Outputs Hi-Z
±1
µA
Flash
EF = VDDQF ± 0.2V
RPF = VDDQ ± 0.2V
15
50
µA
SRAM
E1S ≥ VDDS – 0.2V
VIN ≥ VDDS − 0.2V or VIN ≤
0.2V
5
15
µA
Flash
RPF = VSSF ± 0.2V
15
50
µA
VDDS = 3.3V,
IOUT = 0 mA, f = 1MHz
1.5
3
mA
VDDS = 3.3V,
IOUT = 0 mA, f = fMAX = 1/tAVAV
7
15
mA
EF = VIL, GF = VIH, f = 5 MHz
10
20
mA
Program in progress
VPPF = 12V ± 5%
10
20
mA
Program in progress
VPPF = VDDF
10
20
mA
Erase in progress
VPPF = 12V ± 5%
5
20
mA
Erase in progress
VPPF = VDDF
5
20
mA
Output Leakage Current
VDD Standby Current
Supply Current (Reset)
Supply Current
Supply Current (Read)
Supply Current
(Program)
Supply Current (Erase)
Min
Typ
SRAM
Flash
Flash
Flash
Supply Current
(Program/Erase
Suspend)
Flash
EF = VDDQF ± 0.2V,
Erase suspended
50
µA
IPP1
Program Current
(Read or Standby)
Flash
VPPF > VDDF
400
µA
IPP2
Program Current
(Read or Standby)
Flash
VPPF ≤ VDDF
5
µA
IPPR
Program Current (Reset)
Flash
RPF = VSSF ± 0.2V
5
µA
VPPF = 12V ± 0.5V
Program in progress
10
mA
VPPF = VDDF
Program in progress
5
mA
VPPF = 12V ± 0.5V
Erase in progress
10
mA
VPPF = VDDF
Erase in progress
5
µA
IDDES
IPPW
IPPE
Program Current
(Program)
Program Current (Erase)
Flash
Flash
VIL
Input Low Voltage
Flash & SRAM
VDDQF = VDDS ≥ 2.7V
–0.3
0.6
V
VIH
Input High Voltage
Flash & SRAM
VDDQF = VDDS ≥ 2.7V
0.7VDDQF
VDDQF
+0.3
V
13/62
M36W216TI, M36W216BI
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
0.1
V
VOL
Output Low Voltage
Flash & SRAM
VDDQF = VDDS = VDD min
IOL = 100µA
VOH
Output High Voltage
Flash & SRAM
VDDQF = VDDS = VDD min
IOH = –100µA
VPP1
Program Voltage
(Program or Erase
operations)
Flash
1.65
3.6
V
VPPFH
Program Voltage
(Program or Erase
operations)
Flash
11.4
12.6
V
VPPLK
Program Voltage
(Program and Erase
lock-out)
Flash
1
V
VLKO
VDDF Supply Voltage
(Program and Erase
lock-out)
Flash
2
V
14/62
VDDQ
–0.1
V
M36W216TI, M36W216BI
PACKAGE MECHANICAL
Figure 7. Stacked LFBGA66-12x8mm, 8x8 ball array, 0.8mm pitch, Bottom View Package Outline
D
D2
D1
SE
b
BALL "A1"
e
E E1
FE
FD
SD
ddd
e
A
A2
A1
BGA-Z12
Note: Drawing is not to scale.
Table 7. Stacked LFBGA66 - 12x8mm, 8x8 ball array, 0.8 mm pitch, Package Mechanical Data
Symbol
millimeters
Typ
Min
A
inches
Max
Typ
Min
1.400
A1
0.0551
0.300
A2
Max
0.0118
1.100
0.0433
b
0.400
0.300
0.500
0.0157
0.0118
0.0197
D
12.000
–
–
0.4724
–
–
D1
5.600
–
–
0.2205
–
–
D2
8.800
–
–
0.3465
–
–
ddd
0.100
0.0039
E
8.000
–
–
0.3150
–
–
E1
5.600
–
–
0.2205
–
–
e
0.800
–
–
0.0315
–
–
FD
1.600
–
–
0.0630
–
–
FE
1.200
–
–
0.0472
–
–
SD
0.400
–
–
0.0157
–
–
SE
0.400
–
–
0.0157
–
–
15/62
M36W216TI, M36W216BI
16/62
H
G
F
E
D
C
B
A
#1
#2
1
2
3
4
5
6
7
8
#3
#4
AI90273
Figure 8. Stacked LFBGA66 Daisy Chain - Package Connections (Top view through package)
M36W216TI, M36W216BI
8
1
#2
H
G
F
E
D
C
B
A
#1
START
POINT
2
3
4
5
6
7
END
POINT
#3
#4
AI90274
Figure 9. Stacked LFBGA66 Daisy Chain - PCB Connections proposal (Top view through package)
17/62
M36W216TI, M36W216BI
PART NUMBERING
Table 8. Ordering Information Scheme
Example:
M36W216 T
I
85 ZA
6
T
Device Type
M36 = MMP (Flash + SRAM)
Operating Voltage
W = VDDF = 2.7V to 3.3V, VDDS = VDDQF = 2.7V to 3.3V
SRAM Chip Size & Organization
2 = 2 Mbit (128K x 16 bit)
Device Function
16 = 16 Mbit (x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
SRAM Component
I = 2Mb, 0.16µm, 70ns, 3V
Speed
70 = 70ns
85 = 85ns
Package
ZA = LFBGA66: 12x8mm, 0.8mm pitch
Temperature Range
1 = 0 to 70°C
6 = –40 to 85°C
Option
T = Tape & Reel packing
Devices are shipped from the factory with the memory content bits erased to ’1’.
Table 9. Daisy Chain Ordering Scheme
Example:
M36W216TI
-ZA T
Device Type
M36W216TI
Daisy Chain
-ZA = LFBGA66: 0.8mm pitch
Option
T = Tape & Reel Packing
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the STMicroelectronics Sales Office nearest to you.
18/62
M36W216TI, M36W216BI
FLASH DEVICE
The M36W216TI contains one 16 Mbit Flash
memory. This section describes how to use the
Flash device and all signals refer to the Flash device.
FLASH SUMMARY DESCRIPTION
The Flash Memory is a 16 Mbit (1 Mbit x 16) nonvolatile device that can be erased electrically at
the block level and programmed in-system on a
Word-by-Word basis. These operations can be
performed using a single low voltage (2.7 to 3.6V)
supply. VDDQF is used to drive the I/O pin down to
1.65V. An optional 12V VPPF power supply is provided to speed up customer programming.
The device features an asymmetrical blocked architecture with an array of 39 blocks: 8 Parameter
Blocks of 4 KWords and 31 Main Blocks of 32
KWords. The M36W216TI has the Parameter
Blocks at the top of the memory address space
while the M36W216BI locates the Parameter
Blocks starting from the bottom. The memory
maps are shown in Figure 10, Block Addresses.
The Flash Memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling instant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any accidental programming or erasure. There is an additional
hardware protection against program and erase.
When VPPF ≤ VPPLK all blocks are protected
against program or erase. All blocks are locked at
Power Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a 128 bit Protection Register
and a Security Block to increase the protection of
a system design. The Protection Register is divided into two 64 bit segments, the first one contains
a unique device number written by ST, while the
second one is one-time-programmable by the user. The user programmable segment can be permanently protected. The Security Block,
parameter block 0, can be permanently protected
by the user. Figure 11, shows the Flash Security
Block Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the timings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
19/62
M36W216TI, M36W216BI
Figure 10. Flash Block Addresses
Bottom Boot Block Addresses
Top Boot Block Addresses
FFFFF
FFFFF
32 KWords
4 KWords
F8000
F7FFF
FF000
32 KWords
Total of 8
4 KWord Blocks
F0000
Total of 31
32 KWord Blocks
F8FFF
4 KWords
F8000
F7FFF
32 KWords
F0000
0FFFF
32 KWords
08000
07FFF
4 KWords
Total of 31
32 KWord Blocks
07000
Total of 8
4 KWord Blocks
0FFFF
32 KWords
08000
07FFF
00FFF
32 KWords
4 KWords
00000
00000
AI90256
Note: Also see Appendix A, Tables 25 and 26 for a full listing of the Flash Block Addresses.
Figure 11. Flash Security Block and Protection Register Memory Map
PROTECTION REGISTER
SECURITY BLOCK
88h
User Programmable OTP
85h
84h
Parameter Block # 0
Unique device number
81h
80h
Protection Register Lock
2
1
0
AI07905
20/62
M36W216TI, M36W216BI
FLASH BUS OPERATIONS
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Output Disable, Standby, Automatic Standby and Reset. See Table 2, Main Operation Modes, for a
summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Read. Read Bus operations are used to output
the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common
Flash Interface. Both Chip Enable and Output Enable must be at VIL in order to perform a read operation. The Chip Enable input should be used to
enable the device. Output Enable should be used
to gate data onto the output. The data read depends on the previous command written to the
memory (see Command Interface section). See
Figure 12, Flash Read Mode AC Waveforms, and
Table 18, Flash Read AC Characteristics, for details of when the output becomes valid.
Read mode is the default state of the device when
exiting Reset or after power-up.
Write. Bus Write operations write Commands to
the memory or latch Input Data to be programmed.
A write operation is initiated when Chip Enable
and Write Enable are at V IL with Output Enable at
VIH. Commands, Input Data and Addresses are
latched on the rising edge of Write Enable or Chip
Enable, whichever occurs first.
See Figures 13 and 14, Flash Write AC Waveforms, and Tables 19 and 20, Flash Write AC
Characteristics, for details of the timing requirements.
Output Disable. The data outputs are high impedance when the Output Enable is at V IH.
Standby. Standby disables most of the internal
circuitry allowing a substantial reduction of the current consumption. The memory is in stand-by
when Chip Enable is at VIH and the device is in
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently from the Output Enable
or Write Enable inputs. If Chip Enable switches to
VIH during a program or erase operation, the device enters Standby mode when finished.
Automatic Standby. Automatic Standby provides a low power consumption state during Read
mode. Following a read operation, the device enters Automatic Standby after 150ns of bus inactivity even if Chip Enable is Low, VIL, and the supply
current is reduced to IDD1. The data Inputs/Outputs will still output data if a bus Read operation is
in progress.
Reset. During Reset mode when Output Enable
is Low, VIL, the memory is deselected and the outputs are high impedance. The memory is in Reset
mode when Reset is at V IL. The power consumption is reduced to the Standby level, independently
from the Chip Enable, Output Enable or Write Enable inputs. If Reset is pulled to V SS during a Program or Erase, this operation is aborted and the
memory content is no longer valid.
21/62
M36W216TI, M36W216BI
FLASH COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings and verifies the correct execution
of the Program and Erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time during, to
monitor the progress of the operation, or the Program/Erase states. See Appendix 29, Table 33,
Write State Machine Current/Next, for a summary
of the Command Interface.
The Command Interface is reset to Read mode
when power is first applied, when exiting from Reset or whenever V DD is lower than VLKO . Command sequences must be followed exactly. Any
invalid combination of commands will reset the device to Read mode. Refer to Table 10, Commands, in conjunction with the text descriptions
below.
Read Memory Array Command
The Read command returns the memory to its
Read mode. One Bus Write cycle is required to issue the Read Memory Array command and return
the memory to Read mode. Subsequent read operations will read the addressed location and output the data. When a device Reset occurs, the
memory defaults to Read mode.
Read Status Register Command
The Status Register indicates when a program or
erase operation is complete and the success or
failure of the operation itself. Issue a Read Status
Register command to read the Status Register’s
contents. Subsequent Bus Read operations read
the Status Register at any address, until another
command is issued. See Table 17, Status Register
Bits, for details on the definitions of the bits.
The Read Status Register command may be issued at any time, even during a Program/Erase
operation. Any Read attempt during a Program/
Erase operation will automatically output the content of the Status Register.
Read Electronic Signature Command
The Read Electronic Signature command reads
the Manufacturer and Device Codes and the Block
Locking Status, or the Protection Register.
The Read Electronic Signature command consists
of one write cycle, a subsequent read will output
the Manufacturer Code, the Device Code, the
Block Lock and Lock-Down Status, or the Protection and Lock Register. See Tables 11, 12 and 13
for the valid address.
Read CFI Query Command
The Read Query Command is used to read data
from the Common Flash Interface (CFI) Memory
22/62
Area, allowing programming equipment or applications to automatically match their interface to
the characteristics of the device. One Bus Write
cycle is required to issue the Read Query Command. Once the command is issued subsequent
Bus Read operations read from the Common
Flash Interface Memory Area. See Appendix B,
Common Flash Interface, Tables 27, 28, 29, 30,
31 and 32 for details on the information contained
in the Common Flash Interface memory area.
Block Erase Command
The Block Erase command can be used to erase
a block. It sets all the bits within the selected block
to ’1’. All previous data in the block is lost. If the
block is protected then the Erase operation will
abort, the data in the block will not be changed and
the Status Register will output the error.
Two Bus Write cycles are required to issue the
command.
■ The first bus cycle sets up the Erase command.
■ The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
Erase aborts if Reset turns to VIL. As data integrity
cannot be guaranteed when the Erase operation is
aborted, the block must be erased again.
During Erase operations the memory will accept
the Read Status Register command and the Program/Erase Suspend command, all other commands will be ignored. Typical Erase times are
given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.
See Appendix C, Figure 28, Erase Flowchart and
Pseudo Code, for a suggested flowchart for using
the Erase command.
Program Command
The memory array can be programmed word-byword. Two bus write cycles are required to issue
the Program Command.
■ The first bus cycle sets up the Program
command.
■ The second latches the Address and the Data to
be written and starts the Program/Erase
Controller.
During Program operations the memory will accept the Read Status Register command and the
Program/Erase Suspend command. Typical Program times are given in Table 14, Program, Erase
Times and Program/Erase Endurance Cycles.
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
M36W216TI, M36W216BI
operation is aborted, the block containing the
memory location must be erased and reprogrammed.
See Appendix C, Figure 25, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
Double Word Program Command
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempted when V PP is not at VPPFH. The command can
be executed if VPP is below VPPFH but the result is
not guaranteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
■ The first bus cycle sets up the Double Word
Program Command.
■ The second bus cycle latches the Address and
the Data of the first word to be written.
■ The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register content after the programming has started. Programming aborts if Reset goes to VIL. As data integrity
cannot be guaranteed when the program operation is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 26, Double Word Program Flowchart and Pseudo Code, for the flowchart for using the Double Word Program
command.
Clear Status Register Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
The bits in the Status Register do not automatically return to ‘0’ when a new Program or Erase command is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase controller.
During Program/Erase Suspend the Command Interface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electronic Signature and Read CFI Query commands. Additionally, if the suspend operation was Erase then
the Program, Block Lock, Block Lock-Down or
Protection Program commands will also be accepted. The block being erased may be protected
by issuing the Block Protect, Block Lock or Protection Program commands. When the Program/
Erase Resume command is issued the operation
will complete. Only the blocks not being erased
may be read or programmed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to V IH. Program/Erase is aborted if
Reset turns to VIL.
See Appendix C, Figure 27, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
29, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subsequent Bus Read operations read the Status Register.
See Appendix C, Figure 27, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
29, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to Program the 64 bit user One-Time-Programmable (OTP) segment of the Protection Register. The segment is programmed 16 bits at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
Two write cycles are required to issue the Protection Register Program command.
■ The first bus cycle sets up the Protection
Register Program command.
■ The second latches the Address and the Data to
be written to the Protection Register and starts
the Program/Erase Controller.
Read operations output the Status Register content after the programming has started.
The segment can be protected by programming bit
1 of the Protection Lock Register. Bit 1 of the Protection Lock Register protects bit 2 of the Protection Lock Register. Programming bit 2 of the
Protection Lock Register will result in a permanent
protection of the Security Block (see Figure 11,
Flash Security Block and Protection Register
Memory Map). Attempting to program a previously
protected Protection Register will result in a Status
Register error. The protection of the Protection
23/62
M36W216TI, M36W216BI
Register and/or the Security Block is not reversible.
The Protection Register Program cannot be suspended. See Appendix C, Figure 31, Protection
Register Program Flowchart and Pseudo Code,
for the flowchart for using the Protection Register
Program command.
Block Lock Command
The Block Lock command is used to lock a block
and prevent Program or Erase operations from
changing the data in it. All blocks are locked at
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
■ The first bus cycle sets up the Block Lock
command.
■ The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 16 shows the protection status after issuing
a Block Lock command.
The Block Lock bits are volatile, once set they remain set until a hardware reset or power-down/
power-up. They are cleared by a Blocks Unlock
command. Refer to the section, Block Locking, for
a detailed explanation.
Block Unlock Command
The Blocks Unlock command is used to unlock a
block, allowing the block to be programmed or
24/62
erased. Two Bus Write cycles are required to issue the Blocks Unlock command.
■ The first bus cycle sets up the Block Unlock
command.
■ The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 16 shows the protection status after issuing
a Block Unlock command. Refer to the section,
Block Locking, for a detailed explanation.
Block Lock-Down Command
A locked block cannot be Programmed or Erased,
or have its protection status changed when WP F is
low, V IL. When WPF is high, VIH, the Lock-Down
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock command.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
■ The first bus cycle sets up the Block Lock
command.
■ The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 16 shows the protection status after issuing a Block Lock-Down command.
Refer to the section, Block Locking, for a detailed
explanation.
M36W216TI, M36W216BI
Table 10. Flash Commands
Bus Write Operations
No. of
Cycles
Commands
1st Cycle
2nd Cycle
3nd Cycle
Bus
Op.
Addr
Data
Bus
Op.
Addr
Data
Read Memory Array
1+
Write
X
FFh
Read
Read
Addr
Data
Read Status Register
1+
Write
X
70h
Read
X
Status
Register
Read Electronic Signature
1+
Write
X
90h
Read
Signature
Addr (2)
Signature
Read CFI Query
1+
Write
X
98h
Read
CFI Addr
Query
Erase
2
Write
X
20h
Write
Block
Addr
D0h
Program
2
Write
X
40h or
10h
Write
Addr
Data
Input
Double Word Program(3)
3
Write
X
30h
Write
Addr 1
Data
Input
Clear Status Register
1
Write
X
50h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Block Lock
2
Write
X
60h
Write
Block
Address
01h
Block Unlock
2
Write
X
60h
Write
Block
Address
D0h
Block Lock-Down
2
Write
X
60h
Write
Block
Address
2Fh
Protection Register
Program
2
Write
X
C0h
Write
Address
Data
Input
Bus
Op.
Addr
Data
Write
Addr 2
Data
Input
Note: 1. X = Don’t Care.
2. The signature addresses are listed in Tables 11, 12 and 13.
3. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
Table 11. Read Electronic Signature
Code
EF
GF
WF
A0
A1
A2-A7
A8-A19
DQ0-DQ7
DQ8-DQ15
VIL
VIL
VIH
VIL
VIL
0
Don’t Care
20h
00h
M36W216TI
VIL
VIL
VIH
VIH
VIL
0
Don’t Care
CEh
88h
M36W216BI
VIL
VIL
VIH
VIH
VIL
0
Don’t Care
CFh
88h
Device
Manufacture.
Code
Device Code
Note:
RP F = VIH.
25/62
M36W216TI, M36W216BI
Table 12. Read Block Lock Signature
EF
GF
WF
A0
A1
A2-A7
Locked Block
VIL
VIL
VIH
VIL
VIH
0
Unlocked Block
VIL
VIL
VIH
VIL
VIH
Locked-Down
Block
VIL
VIL
VIH
VIL
VIH
Block Status
A8-A11
A12-A19
DQ0
DQ1
DQ2-DQ15
Don’t Care Block Address
1
0
00h
0
Don’t Care Block Address
0
0
00h
0
Don’t Care Block Address
X (1)
1
00h
Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see Block Locking section.
Table 13. Read Protection Register and Lock Register
EF
GF
WF A0-A7
Lock
VIL
VIL
VIH
Unique ID 0
VIL
VIL
Unique ID 1
VIL
Unique ID 2
Word
A8-A19
DQ0
DQ1
DQ2
DQ3-DQ7 DQ8-DQ15
80h
Don’t Care
0
OTP Prot.
data
Security
prot. data
00h
00h
VIH
81h
Don’t Care
ID data
ID data
ID data
ID data
ID data
VIL
VIH
82h
Don’t Care
ID data
ID data
ID data
ID data
ID data
VIL
VIL
VIH
83h
Don’t Care
ID data
ID data
ID data
ID data
ID data
Unique ID 3
VIL
VIL
VIH
84h
Don’t Care
ID data
ID data
ID data
ID data
ID data
OTP 0
VIL
VIL
VIH
85h
Don’t Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 1
VIL
VIL
VIH
86h
Don’t Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 2
VIL
VIL
VIH
87h
Don’t Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 3
VIL
VIL
VIH
88h
Don’t Care
OTP data
OTP data
OTP data
OTP data
OTP data
Table 14. Program, Erase Times and Program/Erase Endurance Cycles
M36W216TI
Parameter
Test Conditions
Unit
Min
Word Program
Double Word Program
Typ
Max
VPP = VDD
10
200
µs
VPP = 12V ±5%
10
200
µs
VPP = 12V ±5%
0.16
5
s
VPP = VDD
0.32
5
s
VPP = 12V ±5%
0.02
4
s
VPP = VDD
0.04
4
s
VPP = 12V ±5%
1
10
s
VPP = VDD
1
10
s
VPP = 12V ±5%
0.8
10
s
VPP = VDD
0.8
10
s
Main Block Program
Parameter Block Program
Main Block Erase
Parameter Block Erase
Program/Erase Cycles (per Block)
26/62
100,000
cycles
M36W216TI, M36W216BI
FLASH BLOCK LOCKING
The Flash memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency. This locking
scheme has three levels of protection.
■ Lock/Unlock - this first level allows softwareonly control of block locking.
■
■
Lock-Down - this second level requires
hardware interaction before locking can be
changed.
VPP ≤ VPPLK - the third level offers a complete
hardware protection against program and erase
on all blocks.
The lock status of each block can be set to
Locked, Unlocked, and Lock-Down. Table 16, defines all of the possible protection states (WPF,
DQ1, DQ0), and Appendix C, Figure 30, shows a
flowchart for the locking operations.
Reading a Block’s Lock Status
The lock status of every block can be read in the
Read Electronic Signature mode of the device. To
enter this mode write 90h to the device. Subsequent reads at the address specified in Table 12,
will output the lock status of that block. The lock
status is represented by DQ0 and DQ1. DQ0 indicates the Block Lock/Unlock status and is set by
the Lock command and cleared by the Unlock
command. It is also automatically set when entering Lock-Down. DQ1 indicates the Lock-Down status and is set by the Lock-Down command. It
cannot be cleared by software, only by a hardware
reset or power-down.
The following sections explain the operation of the
locking system.
Locked State
The default status of all blocks on power-up or after a hardware reset is Locked (states (0,0,1) or
(1,0,1)). Locked blocks are fully protected from
any program or erase. Any program or erase operations attempted on a locked block will return an
error in the Status Register. The Status of a
Locked block can be changed to Unlocked or
Lock-Down using the appropriate software commands. An Unlocked block can be Locked by issuing the Lock command.
Unlocked State
Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)),
can be programmed or erased. All unlocked
blocks return to the Locked state after a hardware
reset or when the device is powered-down. The
status of an unlocked block can be changed to
Locked or Locked-Down using the appropriate
software commands. A locked block can be unlocked by issuing the Unlock command.
Lock-Down State
Blocks that are Locked-Down (state (0,1,x))are
protected from program and erase operations (as
for Locked blocks) but their lock status cannot be
changed using software commands alone. A
Locked or Unlocked block can be Locked-Down by
issuing the Lock-Down command. Locked-Down
blocks revert to the Locked state when the device
is reset or powered-down.
The Lock-Down function is dependent on the WPF
input pin. When WPF=0 (V IL), the blocks in the
Lock-Down state (0,1,x) are protected from program, erase and protection status changes. When
WPF=1 (VIH) the Lock-Down function is disabled
(1,1,1) and Locked-Down blocks can be individually unlocked to the (1,1,0) state by issuing the
software command, where they can be erased and
programmed. These blocks can then be relocked
(1,1,1) and unlocked (1,1,0) as desired while WPF
remains high. When WP F is low , blocks that were
previously Locked-Down return to the Lock-Down
state (0,1,x) regardless of any changes made
while WPF was high. Device reset or power-down
resets all blocks , including those in Lock-Down, to
the Locked state.
Locking Operations During Erase Suspend
Changes to block lock status can be performed
during an erase suspend by using the standard
locking command sequences to unlock, lock or
lock-down a block. This is useful in the case when
another block needs to be updated while an erase
operation is in progress.
To change block locking during an erase operation, first write the Erase Suspend command, then
check the status register until it indicates that the
erase operation has been suspended. Next write
the desired Lock command sequence to a block
and the protection status will be changed. After
completing any desired lock, read, or program operations, resume the erase operation with the
Erase Resume command.
If a block is locked or locked-down during an erase
suspend of the same block, the locking status bits
will be changed immediately, but when the erase
is resumed, the erase operation will complete.
Locking operations cannot be performed during a
program suspend. Refer to Appendix D, Command Interface and Program/Erase Controller
State, for detailed information on which commands are valid during erase suspend.
27/62
M36W216TI, M36W216BI
Table 15. Block Lock Status
Item
Address
Data
Block Lock Configuration
LOCK
Block is Unlocked
DQ0=0
xx002
Block is Locked
DQ0=1
Block is Locked-Down
DQ1=1
Table 16. Protection Status
Current
Protection Status(1)
(WPF, DQ1, DQ0)
Next Protection Status(1)
(WPF, DQ1, DQ0)
Current State
Program/Erase
Allowed
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
After
WPF transition
1,0,0
yes
1,0,1
1,0,0
1,1,1
0,0,0
no
1,0,1
1,0,0
1,1,1
0,0,1
1,1,0
yes
1,1,1
1,1,0
1,1,1
0,1,1
1,1,1
no
1,1,1
1,1,0
1,1,1
0,1,1
0,0,0
yes
0,0,1
0,0,0
0,1,1
1,0,0
0,0,1(2)
no
0,0,1
0,0,0
0,1,1
1,0,1
0,1,1
no
0,1,1
0,1,1
0,1,1
1,1,1 or 1,1,0 (3)
(2)
1,0,1
Note: 1. The protection status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block)
as read in the Read Electronic Signature command with A1 = VIH and A0 = VIL.
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WPF status.
3. A WPF transition to V IH on a locked block will restore the previous DQ0 value, giving a 111 or 110.
28/62
M36W216TI, M36W216BI
FLASH STATUS REGISTER
The Status Register provides information on the
current or previous Program or Erase operation.
The various bits convey information and errors on
the operation. To read the Status register the
Read Status Register command can be issued, refer to Read Status Register Command section. To
output the contents, the Status Register is latched
on the falling edge of the Chip Enable or Output
Enable signals, and can be read until Chip Enable
or Output Enable returns to VIH. Either Chip Enable or Output Enable must be toggled to update
the latched data.
Bus Read operations from any address always
read the Status Register during Program and
Erase operations.
The bits in the Status Register are summarized in
Table 17, Status Register Bits. Refer to Table 17
in conjunction with the following text descriptions.
Program/Erase Controller Status (Bit 7). The Program/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
Low (set to ‘0’), the Program/Erase Controller is
active; when the bit is High (set to ‘1’), the Program/Erase Controller is inactive, and the device
is ready to process a new command.
The Program/Erase Controller Status is Low immediately after a Program/Erase Suspend command is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller pauses the bit is High .
During Program, Erase, operations the Program/
Erase Controller Status bit can be polled to find the
end of the operation. Other bits in the Status Register should not be tested until the Program/Erase
Controller completes the operation and the bit is
High.
After the Program/Erase Controller completes its
operation the Erase Status, Program Status, VPP
Status and Block Lock Status bits should be tested
for errors.
Erase Suspend Status (Bit 6). The Erase Suspend Status bit indicates that an Erase operation
has been suspended or is going to be suspended.
When the Erase Suspend Status bit is High (set to
‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Program/Erase Resume command.
The Erase Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive).
Bit 7 is set within 30µs of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than
entering the Suspend mode.
When a Program/Erase Resume command is issued the Erase Suspend Status bit returns Low.
Erase Status (Bit 5). The Erase Status bit can be
used to identify if the memory has failed to verify
that the block has erased correctly. When the
Erase Status bit is High (set to ‘1’), the Program/
Erase Controller has applied the maximum number of pulses to the block and still failed to verify
that the block has erased correctly. The Erase Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Controller inactive).
Once set High, the Erase Status bit can only be reset Low by a Clear Status Register command or a
hardware reset. If set High it should be reset before a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status (Bit 4). The Program Status bit
is used to identify a Program failure. When the
Program Status bit is High (set to ‘1’), the Program/Erase Controller has applied the maximum
number of pulses to the byte and still failed to verify that it has programmed correctly. The Program
Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Controller inactive).
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset before a new command is issued, otherwise the new
command will appear to fail.
VPP Status (Bit 3). The VPP Status bit can be
used to identify an invalid voltage on the VPP pin
during Program and Erase operations. The VPP
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can occur if V PP becomes invalid during an operation.
When the VPP Status bit is Low (set to ‘0’), the voltage on the V PP pin was sampled at a valid voltage;
when the V PP Status bit is High (set to ‘1’), the VPP
pin has a voltage that is below the V PP Lockout
Voltage, VPPLK, the memory is protected and Program and Erase operations cannot be performed.
Once set High, the V PP Status bit can only be reset
Low by a Clear Status Register command or a
hardware reset. If set High it should be reset before a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Suspend Status (Bit 2). The Program
Suspend Status bit indicates that a Program operation has been suspended. When the Program
Suspend Status bit is High (set to ‘1’), a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Resume command. The Program Suspend Status
should only be considered valid when the Pro-
29/62
M36W216TI, M36W216BI
gram/Erase Controller Status bit is High (Program/
Erase Controller inactive). Bit 2 is set within 5µs of
the Program/Erase Suspend command being issued therefore the memory may still complete the
operation rather than entering the Suspend mode.
When a Program/Erase Resume command is issued the Program Suspend Status bit returns Low.
Block Protection Status (Bit 1). The Block Protection Status bit can be used to identify if a Program or Erase operation has tried to modify the
contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been attempted on a locked block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the new command will appear to fail.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value must be masked.
Note: Refer to Appendix C, Flowcharts and
Pseudo Codes, for using the Status Register.
Table 17. Status Register Bits
Bit
7
6
5
4
3
2
1
0
Name
Definition
’1’
Ready
’0’
Busy
’1’
Suspended
’0’
In progress or Completed
’1’
Erase Error
’0’
Erase Success
’1’
Program Error
’0’
Program Success
’1’
VPP Invalid, Abort
’0’
VPP OK
’1’
Suspended
’0’
In Progress or Completed
’1’
Program/Erase on protected Block, Abort
’0’
No operation to protected blocks
P/E.C. Status
Erase Suspend Status
Erase Status
Program Status
VPP Status
Program Suspend Status
Block Protection Status
Reserved
Note: Logic level ’1’ is High, ’0’ is Low.
30/62
Logic Level
M36W216TI, M36W216BI
Figure 12. Flash Read Mode AC Waveforms
tAVAV
A0-A19
VALID
tAVQV
tAXQX
EF
tELQV
tELQX
tEHQX
tEHQZ
GF
tGLQV
tGHQX
tGLQX
tGHQZ
DQ0-DQ15
VALID
OUTPUTS
ENABLED
ADDR. VALID
CHIP ENABLE
DATA VALID
STANDBY
AI07906
Table 18. Flash Read AC Characteristics
Flash
Symbol
Alt
Parameter
Unit
70
85
tAVAV
tRC
Address Valid to Next Address Valid
Min
70
85
ns
tAVQV
tACC
Address Valid to Output Valid
Max
70
85
ns
tAXQX (1)
tOH
Address Transition to Output Transition
Min
0
0
ns
tEHQX (1)
tOH
Chip Enable High to Output Transition
Min
0
0
ns
tEHQZ (1)
tHZ
Chip Enable High to Output Hi-Z
Max
20
20
ns
tELQV (2)
tCE
Chip Enable Low to Output Valid
Max
70
85
ns
tELQX (1)
tLZ
Chip Enable Low to Output Transition
Min
0
0
ns
tGHQX (1)
tOH
Output Enable High to Output Transition
Min
0
0
ns
tGHQZ (1)
tDF
Output Enable High to Output Hi-Z
Max
20
20
ns
tGLQV (2)
tOE
Output Enable Low to Output Valid
Max
20
20
ns
tGLQX (1)
tOLZ
Output Enable Low to Output Transition
Min
0
0
ns
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to tELQV - tGLQV after the falling edge of EF without increasing tELQV.
31/62
32/62
VPPF
WPF
DQ0-DQ15
WF
GF
EF
A0-A19
tWLWH
COMMAND
SET-UP COMMAND
tDVWH
tELWL
tWHDX
tWHWL
tWHEH
CMD or DATA
CONFIRM COMMAND
OR DATA INPUT
tVPHWH
tWPHWH
tAVWH
VALID
tAVAV
tWHEL
tWHGL
tWHAX
PROGRAM OR ERASE
AI07907
tQVVPL
tQVWPL
STATUS REGISTER
STATUS REGISTER
READ
1st POLLING
tELQV
M36W216TI, M36W216BI
Figure 13. Flash Write AC Waveforms, Write Enable Controlled
M36W216TI, M36W216BI
Table 19. Flash Write AC Characteristics, Write Enable Controlled
Flash
Symbol
Alt
Parameter
Unit
70
85
tAVAV
tWC
Write Cycle Time
Min
70
85
ns
tAVWH
tAS
Address Valid to Write Enable High
Min
45
45
ns
tDVWH
tDS
Data Valid to Write Enable High
Min
45
45
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
0
ns
Chip Enable Low to Output Valid
Min
70
85
ns
Output Valid to VPPF Low
Min
0
0
ns
Output Valid to Write Protect Low
Min
0
0
ns
tELQV
tQVVPL (1,2)
tQVWPL
tVPHWH (1)
tVPS
VPPF High to Write Enable High
Min
200
200
ns
tWHAX
tAH
Write Enable High to Address Transition
Min
0
0
ns
tWHDX
tDH
Write Enable High to Data Transition
Min
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
ns
tWHEL
Write Enable High to Output Enable Low
Min
25
25
ns
tWHGL
Write Enable High to Output Enable Low
Min
20
20
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
25
25
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
45
45
ns
Write Protect High to Write Enable High
Min
45
45
ns
tWPHWH
Note: 1. Sampled only, not 100% tested.
2. Applicable if VPPF is seen as a logic input (VPPF < 3.6V).
33/62
34/62
VPPF
WPF
DQ0-DQ15
EF
GF
WF
A0-A19
tELEH
COMMAND
POWER-UP AND
SET-UP COMMAND
tDVEH
tWLEL
tEHDX
tEHEL
tEHWH
CMD or DATA
CONFIRM COMMAND
OR DATA INPUT
tVPHEH
tWPHEH
tAVEH
VALID
tAVAV
tEHGL
tEHAX
PROGRAM OR ERASE
AI07908
tQVVPL
tQVWPL
STATUS REGISTER
STATUS REGISTER
READ
1st POLLING
tELQV
M36W216TI, M36W216BI
Figure 14. Flash Write AC Waveforms, Chip Enable Controlled
M36W216TI, M36W216BI
Table 20. Flash Write AC Characteristics, Chip Enable Controlled
Flash
Symbol
Alt
Parameter
Unit
70
85
tAVAV
tWC
Write Cycle Time
Min
70
85
ns
tAVEH
tAS
Address Valid to Chip Enable High
Min
45
45
ns
tDVEH
tDS
Data Valid to Chip Enable High
Min
45
45
ns
tEHAX
tAH
Chip Enable High to Address Transition
Min
0
0
ns
tEHDX
tDH
Chip Enable High to Data Transition
Min
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
Min
25
25
ns
Chip Enable High to Output Enable Low
Min
25
25
ns
tEHGL
tEHWH
tWH
Chip Enable High to Write Enable High
Min
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
Min
45
45
ns
Chip Enable Low to Output Valid
Min
70
85
ns
Output Valid to VPPF Low
Min
0
0
ns
Data Valid to Write Protect Low
Min
0
0
ns
tELQV
tQVVPL (1,2)
tQVWPL
tVPHEH (1)
tVPS
VPPF High to Chip Enable High
Min
200
200
ns
tWLEL
tCS
Write Enable Low to Chip Enable Low
Min
0
0
ns
Write Protect High to Chip Enable High
Min
45
45
ns
tWPHEH
Note: 1. Sampled only, not 100% tested.
2. Applicable if VPPF is seen as a logic input (VPPF < 3.6V).
35/62
M36W216TI, M36W216BI
Figure 15. Flash Power-Up and Reset AC Waveforms
WF, EF,GF
tPHWL
tPHEL
tPHGL
tPHWL
tPHEL
tPHGL
RPF
tVDHPH
tPLPH
VDDF, VDDQF
Power-Up
Reset
AI07909b
Table 21. Flash Power-Up and Reset AC Characteristics
Flash
Symbol
tPHWL
tPHEL
tPHGL
Parameter
Reset High to Write Enable Low, Chip Enable
Low, Output Enable Low
Test Condition
Unit
70
85
During
Program and
Erase
Min
50
50
µs
others
Min
30
30
ns
tPLPH(1,2)
Reset Low to Reset High
Min
100
100
ns
tVDHPH(3)
Supply Voltages High to Reset High
Min
50
50
µs
Note: 1. The device Reset is possible but not guaranteed if tPLPH < 100ns.
2. Sampled only, not 100% tested.
3. It is important to assert RPF in order to allow proper CPU initialization during power up or reset.
36/62
M36W216TI, M36W216BI
SRAM DEVICE
This section describes how to use the SRAM and
all signals refer to it.
SRAM SUMMARY DESCRIPTION
The SRAM is a 2 Mbit asynchronous random access memory which features super low voltage operation and low current consumption with an
access time of 70 ns under all conditions. The
memory operations can be performed using a single low voltage supply, 2.7V to 3.3V, which is the
same as the Flash component’s voltage supply.
Figure 16. SRAM Logic Diagram
128Kb x 16
RAM Array
2048 x 1024
SENSE AMPS
A0-A10
ROW DECODER
DATA IN DRIVERS
DQ0-DQ7
DQ8-DQ15
COLUMN DECODER
UBS
WS
A11-A16
GS
LBS
POWER-DOWN
CIRCUIT
UBS
E1S
E2S
LBS
AI07910
37/62
M36W216TI, M36W216BI
SRAM OPERATIONS
There are five standard operations that control the
SRAM component. These are Bus Read, Bus
Write, Standby/Power-down, Data Retention and
Output Disable. A summary is shown in Table 2,
Main Operation Modes
Read. Read operations are used to output the
contents of the SRAM Array. The SRAM is in Read
mode whenever Write Enable, WS, is at VIH, Output Enable, GS, is at V IL, Chip Enable, E1S, is at
VIL, Chip Enable, E2S, is at VIH, and one or both of
the Byte Enables, UBS and LBS is/are at VIL.
Valid data will be available on the output pins after
a time of tAVQV after the last stable address. If the
Chip Enable or Output Enable access times are
not met, data access will be measured from the
limiting parameter (tE1LQV, tE2HQV, or tGLQV) rather than the address. Data out may be indeterminate at tE1LQX, tE2HQX and tGLQX, but data lines
will always be valid at tAVQV (see Table 22, Figures
17 and 18).
Write. Write operations are used to write data to
the SRAM. The SRAM is in Write mode whenever
W S and E1S are at VIL, and E2S is at VIH. Either
the Chip Enable inputs, E1S and E2S, or the Write
Enable input, W S, must be deasserted during address transitions for subsequent write cycles.
A Write operation is initiated when E1S is at VIL,
E2 S is at VIH and WS is at VIL. The data is latched
o the falling edge of E1S, the rising edge of E2S or
the falling edge of WS, whichever occurs last. The
Write cycle is terminated on the rising edge of E1S,
38/62
the rising edge of WS or the falling edge of E2S,
whichever occurs first.
If the Output is enabled (E1S=VIL, E2S=VIH and
GS=VIL), then WS will return the outputs to high impedance within tWLQZ of its falling edge. Care must
be taken to avoid bus contention in this type of operation. The Data input must be valid for t DVWH before the rising edge of Write Enable, for t DVE1H
before the rising edge of E1S or for tDVE2L before
the falling edge of E2S, whichever occurs first, and
remain valid for tWHDX, tE1HAX or tE2LAX (see Table
23, Figures 20, 21, 22 and 23).
Standby/Power-Down. The SRAM component
has a chip enabled power-down feature which invokes an automatic standby mode (see Table 22,
Figure 19). The SRAM is in Standby mode whenever either Chip Enable is deasserted, E1 S at VIH
or E2S at V IL. It is also possible when UBS and LBS
are at VIH.
Data Retention. The SRAM data retention performances as V DDS go down to VDR are described
in Table 24 and Figure 24. In E1S controlled data
retention mode, the minimum standby current
mode is entered when E1S ≥ VDDS – 0.2V and
E2 S ≤ 0.2V or E2S ≥ VDDS – 0.2V. In E2S controlled data retention mode, minimum standby current mode is entered when E2 S ≤ 0.2V.
Output Disable. The data outputs are high impedance when the Output Enable, G S, is at VIH
with Write Enable, W S, at VIH.
M36W216TI, M36W216BI
Figure 17. SRAM Read Mode AC Waveforms, Address Controlled with UBS = LBS = V IL
tAVAV
A0-A16
VALID
tAVQV
tAXQX
DQ0-DQ15
DATA VALID
DATA VALID
AI07911
Note: E1S = Low, E2S = High, GS = Low, WS = High.
Figure 18. SRAM Read AC Waveforms, GS Controlled
tAVAV
A0-A16
VALID
tE1LQV
tE1HQZ
E1S
tE1LQX
tE2HQV
tE2LQZ
E2S
tE2HQX
tBLQV
tBHQZ
UBS, LBS
tBLQX
tGLQV
tGHQZ
GS
tGLQX
DQ0-DQ15
DATA VALID
AI07912
Note: Write Enable (WS) = High. Address Valid prior to or at the same time as E1 S, UBS and LBS going Low.
Figure 19. SRAM Standby AC Waveforms
E1S
E2S
IDD
tPU
tPD
50%
AI07913
39/62
M36W216TI, M36W216BI
Table 22. SRAM Read AC Characteristics
SRAM
Symbol
Alt
Parameter
Unit
Min
Max
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address Valid to Output Valid
tAXQX
tOH
Address Transition to Output Transition
tBHQZ
tBHZ
UBS, LBS Disable to Hi-Z Output
25
ns
tBLQV
tAB
UBS, LBS Access Time
70
ns
tBLQX
tBLZ
UBS, LBS Enable to Low-Z Output
tE1HQZ
tCHZ1
Chip Enable 1 High to Output Hi-Z
25
ns
tE1LQV
tACS1
Chip Enable 1 Low to Output Valid
70
ns
tE1LQX
tCLZ1
Chip Enable 1 Low to Output Transition
tE2HQV
tACS2
Chip Enable 2 High to Output Valid
tE2HQX
tCLZ2
Chip Enable 2 High to Output Transition
tE2LQZ
tCHZ2
Chip Enable 2 Low to Output Hi-Z
25
ns
tGHQZ
tOHZ
Output Enable High to Output Hi-Z
25
ns
tGLQV
tOE
Output Enable Low to Output Valid
35
ns
tGLQX
tOLZ
Output Enable Low to Output Transition
tPD (1)
Chip Enable 1 High or Chip Enable 2 Low to Power Down
tPU (1)
Chip Enable 1 Low or Chip Enable 2 High to Power Up
Note: 1. Sampled only. Not 100% tested.
40/62
70
ns
70
10
ns
5
ns
10
ns
70
10
ns
ns
5
ns
70
0
ns
ns
ns
M36W216TI, M36W216BI
Figure 20. SRAM Write AC Waveforms, WS Controlled
tAVAV
VALID
A0-A16
tAVWH
tE1LWH
tWHAX
E1S
E2S
tE2HWH
tAVWL
tWLWH
WS
tBLWH
UBS, LBS
GS
tDVWH
tGHQZ
DQ0-DQ15
Note 2
tWHDZ
INPUT VALID
AI07914
Note: WS, E1S, E2S, UB S and/or LB S must be asserted to initiate a write cycle. Output Enable (G S) = Low (otherwise, DQ0-DQ15 are high
impedance). If E1S, E2S and WS are deasserted at the same time, DQ0-DQ15 remain high impedance.
2. The I/O pins are in output mode and input signals must not be applied.
41/62
M36W216TI, M36W216BI
Figure 21. SRAM Write AC Waveforms, E1S Controlled
tAVAV
A0-A16
VALID
tAVE1H
tAVE2L
tAVE1L
tE1LE1H
tE1HAX
tAVE2H
tE2HE2L
tE2LAX
E1S
E2S
tWLE1H
tWLE2L
WS
tBLE1H
tBLE2L
UBS, LBS
GS
tDVE1H
tDVE2L
tGHQZ
DQ0-DQ15
Note 3
tE1HDZ
tE2LDZ
INPUT VALID
AI07915
Note: 1. WS, E1S, E2S, UBS and/or LBS must be asserted to initiate a write cycle. Output Enable (GS) = Low (otherwise, DQ0-DQ15 are high
impedance). If E1S, E2S and WS are deasserted at the same time, DQ0-DQ15 remain high impedance.
2. If E1S, E2S and WS are deasserted at the same time, DQ0-DQ15 remain high impedance.
3. The I/O pins are in output mode and input signals must not be applied.
42/62
M36W216TI, M36W216BI
Figure 22. SRAM Write AC Waveforms, WS Controlled with GS Low
tAVAV
A0-A16
VALID
tAVWH
tE1LWH
tE2HWH
tWHAX
E1S
E2S
tBLWH
UBS, LBS
tAVWL
tWLWH
WS
tWHQX
tDVWH
tWLQZ
tWHDZ
INPUT VALID
DQ0-DQ15
AI07916
Note: 1. If E1S, E2S and WS are deasserted at the same time, DQ0-DQ15 remain high impedance.
Figure 23. SRAM Write Cycle Waveform, UBS and LB S Controlled, GS Low
tAVAV
VALID
A0-A16
tAVBH
tE1LBH
tE2HBH
E1S
E2S
tAVBL
tBLBH
tBHAX
UBS, LBS
tWLBH
WS
tDVBH
DQ0-DQ15
tBHDZ
INPUT VALID
AI07917
Note: 1. If E1S, E2S and WS are deasserted at the same time, DQ0-DQ15 remain high impedance.
43/62
M36W216TI, M36W216BI
Table 23. SRAM Write AC Characteristics
SRAM
Symbol
Alt
Parameter
Unit
Min
Max
tAVAV
tWC
Write Cycle Time
70
ns
tAVE1L,
tAVE2H,
tAVWL
tAS
Address Valid to Beginning of Write
0
ns
tAVWH
tAW
Address Valid to Write Enable High
60
ns
tBLWH
tBLE1H
tBLE2L
tAVBH
tBW
UBS, LBS Valid to End of Write
60
ns
tDVE1H,
tDVE2L,
tDVWH
tDVBH
tDW
Input Valid to End of Write
30
ns
tE1HAX,
tE2LAX,
tWHAX
tWR
End of Write to Address Change
0
ns
tE1HDZ ,
tE2LDZ,
tWHDZ
tBHDZ
tHD
Address Transition to End of Write
0
ns
tE1LEIH,
tE1LWH
tCW1
Chip Enable 1 Low to End of Write
60
ns
tE2HE2L
tE2HWH
tCW2
Chip Enable 2 High to End of Write
60
ns
tWHQX
tDH
Write Enable High to Input Transition
10
ns
tWLQZ
tWHZ
Write Enable Low to Output Hi-Z
tWLWH
tWLE1H
tWLE2L
tWP
Write Enable Pulse Width
44/62
25
45
ns
ns
M36W216TI, M36W216BI
Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS / LBS Controlled
DATA RETENTION MODE
VDDS
VDDS (min)
VDDS (min)
tCDR
E1S or
tR
UBS, LBS
AI07918
Table 24. SRAM Low VDDS Data Retention Characteristic
Symbol
Parameter
IDDDR
Supply Current (Data
Retention)
VDR
Supply Voltage (Data
Retention)
tCDR
Chip Disable to Power Down
tR
Operation Recovery Time
Test Condition
Min
VDDS = 1.5V, E1S ≥ VDDS – 0.2V,
VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V
1.5
E1S ≥ VCCS – 0.2V, E2S ≤ 0.2V
Typ
Max
Unit
3
10
µA
3.3
V
0
ns
70
ns
Note: 1. All other Inputs VIH ≤ VDDS –0.2V or VIL ≤ 0.2V.
2. Sampled only. Not 100% tested.
45/62
M36W216TI, M36W216BI
APPENDIX A. BLOCK ADDRESS TABLES
Table 25. Top Boot Block Addresses,
M36W216TI
Table 26. Bottom Boot Block Addresses,
M36W216BI
#
Size
(KWord)
Address Range
#
Size
(KWord)
Address Range
0
4
FF000-FFFFF
38
32
F8000-FFFFF
1
4
FE000-FEFFF
37
32
F0000-F7FFF
2
4
FD000-FDFFF
36
32
E8000-EFFFF
3
4
FC000-FCFFF
35
32
E0000-E7FFF
4
4
FB000-FBFFF
34
32
D8000-DFFFF
5
4
FA000-FAFFF
33
32
D0000-D7FFF
6
4
F9000-F9FFF
32
32
C8000-CFFFF
7
4
F8000-F8FFF
31
32
C0000-C7FFF
8
32
F0000-F7FFF
30
32
B8000-BFFFF
99
32
E8000-EFFFF
29
32
B0000-B7FFF
10
32
E0000-E7FFF
28
32
A8000-AFFFF
11
32
D8000-DFFFF
27
32
A0000-A7FFF
12
32
D0000-D7FFF
26
32
98000-9FFFF
13
32
C8000-CFFFF
25
32
90000-97FFF
14
32
C0000-C7FFF
24
32
88000-8FFFF
15
32
B8000-BFFFF
23
32
80000-87FFF
16
32
B0000-B7FFF
22
32
78000-7FFFF
17
32
A8000-AFFFF
21
32
70000-77FFF
18
32
A0000-A7FFF
20
32
68000-6FFFF
19
32
98000-9FFFF
19
32
60000-67FFF
20
32
90000-97FFF
18
32
58000-5FFFF
21
32
88000-8FFFF
17
32
50000-57FFF
22
32
80000-87FFF
16
32
48000-4FFFF
23
32
78000-7FFFF
15
32
40000-47FFF
24
32
70000-77FFF
14
32
38000-3FFFF
25
32
68000-6FFFF
13
32
30000-37FFF
26
32
60000-67FFF
12
32
28000-2FFFF
27
32
58000-5FFFF
11
32
20000-27FFF
28
32
50000-57FFF
10
32
18000-1FFFF
29
32
48000-4FFFF
9
32
10000-17FFF
30
32
40000-47FFF
8
32
08000-0FFFF
31
32
38000-3FFFF
7
4
07000-07FFF
32
32
30000-37FFF
6
4
06000-06FFF
33
32
28000-2FFFF
5
4
05000-05FFF
34
32
20000-27FFF
4
4
04000-04FFF
35
32
18000-1FFFF
3
4
03000-03FFF
36
32
10000-17FFF
2
4
02000-02FFF
37
32
08000-0FFFF
1
4
01000-01FFF
38
32
00000-07FFF
0
4
00000-00FFF
46/62
M36W216TI, M36W216BI
APPENDIX B. COMMON FLASH INTERFACE (CFI)
The Common Flash Interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when
necessary.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables 27, 28,
29, 30, 31 and 32 show the addresses used to retrieve the data.
The CFI data structure also contains a security
area where a 64 bit unique security number is written (see Table 32, Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security number after it has been written by ST. Issue a Read
command to return to Read mode.
Table 27. Query Structure Overview
Offset
Sub-section Name
Description
00h
Reserved
Reserved for algorithm-specific information
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing & voltage information
27h
Device Geometry Definition
Flash device layout
P
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
A
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Note: Query data are always presented on the lowest order data outputs.
Table 28. CFI Query Identification String
Offset
Data
Description
00h
0020h
Manufacturer Code
01h
88CEh
88CFh
Device Code
02h-0Fh
reserved
10h
0051h
11h
0052h
12h
0059h
13h
0003h
14h
0000h
15h
0035h
16h
0000h
17h
0000h
18h
0000h
19h
0000h
1Ah
0000h
Value
ST
Top
Bottom
Reserved
"Q"
Query Unique ASCII String "QRY"
"R"
"Y"
Primary Algorithm Command Set and Control Interface ID code 16 bit ID code
defining a specific algorithm
Address for Primary Algorithm extended Query table (see Table 30)
Intel
compatible
P = 35h
Alternate Vendor Command Set and Control Interface ID Code second vendor specified algorithm supported (0000h means none exists)
NA
Address for Alternate Algorithm extended Query table
(0000h means none exists)
NA
Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
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M36W216TI, M36W216BI
Table 29. CFI Query System Interface Information
Offset
Data
1Bh
0027h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
0036h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2n µs
16µs
20h
0004h
Typical time-out for Double Word Program = 2n µs
16µs
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0005h
Maximum time-out for word program = 2n times typical
512µs
24h
0005h
Maximum time-out for Double Word Program = 2n times typical
512µs
25h
0003h
Maximum time-out per individual block erase = 2n times typical
8s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA
48/62
Description
Value
M36W216TI, M36W216BI
Table 30. Device Geometry Definition
Data
27h
0015h
Device Size = 2n in number of bytes
28h
29h
0001h
0000h
Flash Device Interface Code description
2Ah
2Bh
0002h
0000h
Maximum number of bytes in multi-byte program or page = 2n
4
2Ch
0002h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2
2Dh
2Eh
001Eh
0000h
Region 1 Information
Number of identical-size erase block = 001Eh+1
31
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
31h
32h
001Eh
0000h
Region 2 Information
Number of identical-size erase block = 001Eh+1
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
M36W216BI
M36W216TI
Offset Word
Mode
Description
Value
2 MByte
x16
Async.
64 KByte
8
8 KByte
8
8 KByte
31
64 KByte
49/62
M36W216TI, M36W216BI
Table 31. Primary Algorithm-Specific Extended Query Table
Offset
P = 35h (1)
Data
(P+0)h = 35h
0050h
(P+1)h = 36h
0052h
(P+2)h = 37h
0049h
(P+3)h = 38h
0031h
Major version number, ASCII
"1"
(P+4)h = 39h
0030h
Minor version number, ASCII
"0"
(P+5)h = 3Ah
0066h
(P+6)h = 3Bh
0000h
(P+7)h = 3Ch
0000h
(P+8)h = 3Dh
0000h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
Chip Erase supported
(1 = Yes, 0 = No)
bit 1
Suspend Erase supported
(1 = Yes, 0 = No)
bit 2
Suspend Program supported
(1 = Yes, 0 = No)
bit 3
Legacy Lock/Unlock supported
(1 = Yes, 0 = No)
bit 4
Queued Erase supported
(1 = Yes, 0 = No)
bit 5
Instant individual block locking supported (1 = Yes, 0 = No)
bit 6
Protection bits supported
(1 = Yes, 0 = No)
bit 7
Page mode read supported
(1 = Yes, 0 = No)
bit 8
Synchronous read supported
(1 = Yes, 0 = No)
bit 31 to 9 Reserved; undefined bits are ‘0’
No
Yes
Yes
No
No
Yes
Yes
No
No
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 3Fh
0003h
(P+B)h = 40h
0000h
Description
Value
"P"
Primary Algorithm extended Query table unique ASCII string “PRI”
"R"
"I"
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
Address (P+A)h contains less significant byte
bit 0 Block Lock Status Register Lock/Unlock bit active (1 = Yes, 0 = No)
bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
Yes
Yes
(P+C)h = 41h
0030h
V DD Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
3V
(P+D)h = 42h
00C0h
VPP Supply Optimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12V
(P+E)h = 43h
0001h
Number of Protection register fields in JEDEC ID space.
"00h," indicates that 256 protection bytes are available
01
(P+F)h = 44h
0080h
80h
(P+10)h = 45h
0000h
(P+11)h = 46h
0003h
(P+12)h = 47h
0003h
Protection Field 1: Protection Description
This field describes user-available. One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device unique
serial numbers. Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte.
The following bytes are factory pre-programmed and user-programmable.
bit 0 to 7
Lock/bytes JEDEC-plane physical low address
bit 8 to 15
Lock/bytes JEDEC-plane physical high address
bit 16 to 23 "n" such that 2n = factory pre-programmed bytes
bit 24 to 31 "n" such that 2n = user programmable bytes
(P+13)h = 48h
Reserved
Note: 1. See Table 28, offset 15 for P pointer definition.
50/62
00h
8 Byte
8 Byte
M36W216TI, M36W216BI
Table 32. Security Code Area
Offset
Data
80h
00XX
81h
XXXX
82h
XXXX
83h
XXXX
84h
XXXX
85h
XXXX
86h
XXXX
87h
XXXX
88h
XXXX
Description
Protection Register Lock
64 bits: unique device number
64 bits: User Programmable OTP
51/62
M36W216TI, M36W216BI
APPENDIX C. FLOWCHARTS AND PSEUDO CODES
Figure 25. Program Flowchart and Pseudo Code
Start
program_command (addressToProgram, dataToProgram) {:
writeToFlash (any_address, 0x40) ;
/*or writeToFlash (any_address, 0x10) ; */
Write 40h or 10h
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
b7 = 1
NO
} while (status_register.b7== 0) ;
YES
b3 = 0
NO
VPPF Invalid
Error (1, 2)
NO
Program
Error (1, 2)
NO
Program to Protected
Block Error (1, 2)
if (status_register.b3==1) /*VPPF invalid error */
error_handler ( ) ;
YES
b4 = 0
if (status_register.b4==1) /*program error */
error_handler ( ) ;
YES
b1 = 0
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI07919
Note: 1. Status check of b1 (Protected Block), b3 (V PPF Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
52/62
M36W216TI, M36W216BI
Figure 26. Double Word Program Flowchart and Pseudo Code
Start
Write 30h
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (any_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
Write Address 1
& Data 1 (3)
Write Address 2
& Data 2 (3)
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
b7 = 1
NO
} while (status_register.b7== 0) ;
YES
b3 = 0
NO
VPPF Invalid
Error (1, 2)
NO
Program
Error (1, 2)
if (status_register.b3==1) /*VPPF invalid error */
error_handler ( ) ;
YES
b4 = 0
if (status_register.b4==1) /*program error */
error_handler ( ) ;
YES
b1 = 0
NO
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI07920
Note: 1. Status check of b1 (Protected Block), b3 (V PPF Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
53/62
M36W216TI, M36W216BI
Figure 27. Program Suspend & Resume Flowchart and Pseudo Code
Start
program_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
writeToFlash (any_address, 0x70) ;
/* read status register to check if
program has already completed */
Write 70h
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
b7 = 1
NO
} while (status_register.b7== 0) ;
YES
b2 = 1
NO
Program Complete
YES
Write FFh
}
Read data from
another address
Write D0h
if (status_register.b2==0) /*program completed */
{ writeToFlash (any_address, 0xFF) ;
read_data ( ) ; /*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
else
{ writeToFlash (any_address, 0xFF) ;
read_data ( ); /*read data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume program*/
}
Write FFh
}
Program Continues
Read Data
AI07921
54/62
M36W216TI, M36W216BI
Figure 28. Erase Flowchart and Pseudo Code
Start
erase_command ( blockToErase ) {
writeToFlash (any_address, 0x20) ;
Write 20h
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
Write Block
Address & D0h
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
b7 = 1
NO
} while (status_register.b7== 0) ;
YES
b3 = 0
NO
VPPF Invalid
Error (1)
YES
Command
Sequence Error (1)
if (status_register.b3==1) /*VPPF invalid error */
error_handler ( ) ;
YES
b4, b5 = 1
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
error_handler ( ) ;
NO
b5 = 0
NO
Erase Error (1)
if ( (status_register.b5==1) )
/* erase error */
error_handler ( ) ;
YES
b1 = 0
NO
Erase to Protected
Block Error (1)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI07922
Note: If an error is found, the Status Register must be cleared before further Program/Erase operations.
55/62
M36W216TI, M36W216BI
Figure 29. Erase Suspend & Resume Flowchart and Pseudo Code
Start
erase_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
writeToFlash (any_address, 0x70) ;
/* read status register to check if
erase has already completed */
Write 70h
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
b7 = 1
NO
} while (status_register.b7== 0) ;
YES
b6 = 1
NO
Erase Complete
if (status_register.b6==0) /*erase completed */
{ writeToFlash (any_address, 0xFF) ;
YES
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
}
else
Write D0h
Write FFh
Erase Continues
Read Data
{ writeToFlash (any_address, 0xFF) ;
read_program_data ( );
/*read or program data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume erase*/
}
}
AI07923
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M36W216TI, M36W216BI
Figure 30. Locking Operations Flowchart and Pseudo Code
Start
locking_operation_command (address, lock_operation) {
writeToFlash (any_address, 0x60) ; /*configuration setup*/
Write 60h
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
Write
01h, D0h or 2Fh
writeToFlash (any_address, 0x90) ;
Write 90h
Read Block
Lock States
Locking
change
confirmed?
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
/*Check the locking state (see Read Block Signature table )*/
NO
YES
writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/
Write FFh
}
End
AI04364
57/62
M36W216TI, M36W216BI
Figure 31. Protection Register Program Flowchart and Pseudo Code
Start
protection_register_program_command (addressToProgram, dataToProgram) {:
writeToFlash (any_address, 0xC0) ;
Write C0h
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
b7 = 1
NO
} while (status_register.b7== 0) ;
YES
b3 = 0
NO
VPPF Invalid
Error (1, 2)
NO
Program
Error (1, 2)
NO
Program to Protected
Block Error (1, 2)
if (status_register.b3==1) /*VPPF invalid error */
error_handler ( ) ;
YES
b4 = 0
if (status_register.b4==1) /*program error */
error_handler ( ) ;
YES
b1 = 0
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI07924
Note: 1. Status check of b1 (Protected Block), b3 (V PPF Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
58/62
M36W216TI, M36W216BI
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE
Table 33. Write State Machine Current/Next, sheet 1 of 2.
Current
State
SR
bit 7
Data
When
Read
Read Array
“1”
Array
Command Input (and Next State)
Read
Array
(FFh)
Program
Setup
(10/40h)
Erase
Confirm
(D0h)
Prog/Ers
Resume
(D0h)
Read
Status
(70h)
Clear
Status
(50h)
Read Array
Read Sts.
Read Array
Read Array
Erase
Setup
Read Array
Read
Status
Read Array
Electronic
Signature
Read Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read Array
“1”
CFI
Read Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read Array
Lock Setup
“1”
Status
Lock Cmd
Error
“1”
Status
Read Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read Array
Lock
(complete)
“1”
Status
Read Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read Array
Prot. Prog.
Setup
“1”
Status
Protection Register Program
Prot. Prog.
(continue)
“0”
Status
Protection Register Program continue
Prot. Prog.
(complete)
“1”
Status
Read
Status
Read Array
Prog. Setup
“1”
Status
Program
(continue)
“0”
Status
Prog. Sus
Status
“1”
Status
Prog. Sus
Read Array
Program Suspend to
Read Array
Program
(continue)
Prog. Sus
Read Array
Program
(continue)
Prog. Sus
Read Sts
Prog. Sus
Read Array
Prog. Sus
Read Array
“1”
Array
Prog. Sus
Read Array
Program Suspend to
Read Array
Program
(continue)
Prog. Sus
Read Array
Program
(continue)
Prog. Sus
Read Sts
Prog. Sus
Read Array
Prog. Sus
Read
Elect.Sg.
“1”
Electronic
Signature
Prog. Sus
Read Array
Program Suspend to
Read Array
Program
(continue)
Prog. Sus
Read Array
Program
(continue)
Prog. Sus
Read Sts
Prog. Sus
Read Array
Prog. Sus
Read CFI
“1”
CFI
Prog. Sus
Read Array
Program Suspend to
Read Array
Program
(continue)
Prog. Sus
Read Array
Program
(continue)
Prog. Sus
Read Sts
Prog. Sus
Read Array
Program
(complete)
“1”
Status
Read Array
Read
Status
Read Array
Erase
Setup
“1”
Status
Erase
Cmd.Error
“1”
Status
Erase
(continue)
“0”
Status
Erase Sus
Read Sts
“1”
Status
Erase Sus
Read Array
Program
Setup
Erase Sus
Read Array
Erase
(continue)
Erase Sus
Read Array
Erase
(continue)
Erase Sus Erase Sus
Read Sts Read Array
Erase Sus
Read Array
“1”
Array
Erase Sus
Read Array
Program
Setup
Erase Sus
Read Array
Erase
(continue)
Erase Sus
Read Array
Erase
(continue)
Erase Sus Erase Sus
Read Sts Read Array
Erase Sus
Read
Elect.Sg.
“1”
Electronic
Signature
Erase Sus
Read Array
Program
Setup
Erase Sus
Read Array
Erase
(continue)
Erase Sus
Read Array
Erase
(continue)
Erase Sus Erase Sus
Read Sts Read Array
Erase Sus
Read CFI
“1”
CFI
Erase Sus
Read Array
Program
Setup
Erase Sus
Read Array
Erase
(continue)
Erase Sus
Read Array
Erase
(continue)
Erase Sus Erase Sus
Read Sts Read Array
Erase
(complete)
“1”
Status
Read Array
Program
Setup
Erase
Setup
“1”
Status
Read
Elect.Sg.
“1”
Read CFI
Query
Ers. Setup
Prog/Ers
Suspend
(B0h)
Program
Setup
Read
Status
Read Array Prog.Setup
Erase
Setup
(20h)
Lock
(complete)
Lock Command Error
Read Array
Program
Setup
Erase
Setup
Lock Cmd
Error
Lock
(complete)
Read Array
Lock Command Error
Program
Prog. Sus
Read Sts
Program (continue)
Program
Setup
Erase
Setup
Erase Command Error
Read Array
Program
Setup
Program (continue)
Read Array
Erase
(continue)
Erase
Setup
Erase (continue)
Erase
CmdError
Erase
(continue)
Erase Command Error
Read Array
Read
Status
Erase Sus
Read Sts
Erase (continue)
Read Array
Read
Status
Read Array
Read Array
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Ers = Erase, Prog. = Program, Prot = Protection, Sus = Suspend.
59/62
M36W216TI, M36W216BI
Table 34. Write State Machine Current/Next, sheet 2 of 2.
Command Input (and Next State)
Current State
Read Elect.Sg.
(90h)
Read CFI
Query
(98h)
Lock Setup
(60h)
Prot. Prog.
Setup (C0h)
Lock Confirm
(01h)
Lock Down
Confirm (2Fh)
Read Array
Read Elect.Sg. Read CFI Query
Lock Setup
Prot. Prog.
Setup
Read Array
Read Status
Read Elect.Sg. Read CFI Query
Lock Setup
Prot. Prog.
Setup
Read Array
Read Elect.Sg.
Read Elect.Sg. Read CFI Query
Lock Setup
Prot. Prog.
Setup
Read Array
Read CFI Query Read Elect.Sg. Read CFI Query
Lock Setup
Prot. Prog.
Setup
Read Array
Lock Setup
Lock Command Error
Lock (complete)
Lock Cmd Error
Read Elect.Sg. Read CFI Query
Lock Setup
Prot. Prog.
Setup
Lock (complete)
Read Elect.Sg. Read CFI Query
Lock Setup
Prot. Prog.
Setup
Prot. Prog.
Setup
Protection Register Program
Prot. Prog.
(continue)
Protection Register Program (continue)
Prot. Prog.
(complete)
Read Elect.Sg. Read CFI Query
Unlock
Confirm
(D0h)
Lock Setup
Prot. Prog.
Setup
Prog. Setup
Program
Program
(continue)
Program (continue)
Read Array
Read Array
Read Array
Prog. Suspend
Read Status
Prog. Suspend Prog. Suspend
Read Elect.Sg. Read CFI Query
Program Suspend Read Array
Program
(continue)
Prog. Suspend
Read Array
Prog. Suspend Prog. Suspend
Read Elect.Sg. Read CFI Query
Program Suspend Read Array
Program
(continue)
Prog. Suspend
Read Elect.Sg.
Prog. Suspend Prog. Suspend
Read Elect.Sg. Read CFI Query
Program Suspend Read Array
Program
(continue)
Prog. Suspend
Read CFI
Prog. Suspend Prog. Suspend
Read Elect.Sg. Read CFI Query
Program Suspend Read Array
Program
(continue)
Program
(complete)
Read Elect.Sg.
Read CFIQuery
Erase Setup
Erase
Cmd.Error
Lock Setup
Prot. Prog.
Setup
Read Array
Erase
(continue)
Erase Command Error
Read Elect.Sg. Read CFI Query
Lock Setup
Erase (continue)
Prot. Prog.
Setup
Read Array
Erase (continue)
Erase Suspend
Read Status
Erase Suspend Erase Suspend
Read Elect.Sg. Read CFI Query
Lock Setup
Erase Suspend Read Array
Erase
(continue)
Erase Suspend
Read Array
Erase Suspend Erase Suspend
Read Elect.Sg. Read CFI Query
Lock Setup
Erase Suspend Read Array
Erase
(continue)
Erase Suspend
Read Elect.Sg.
Erase Suspend Erase Suspend
Read Elect.Sg. Read CFI Query
Lock Setup
Erase Suspend Read Array
Erase
(continue)
Erase Suspend Erase Suspend Erase Suspend
Read CFI Query Read Elect.Sg. Read CFI Query
Lock Setup
Erase Suspend Read Array
Erase
(continue)
Erase
(complete)
Read Elect.Sg. Read CFI Query
Lock Setup
Prot. Prog.
Setup
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Prog. = Program, Prot = Protection.
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Read Array
M36W216TI, M36W216BI
REVISION HISTORY
Table 35. Document Revision History
Date
Version
19-Nov-2002
1.0
Revision Details
First Issue
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M36W216TI, M36W216BI
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