M54HC251 M74HC251 8 BIT SIPO SHIFT REGISTER . . . . . . . . HIGH SPEED tPD = 14 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C 6 V HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS251 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC251F1R M74HC251M1R M74HC251B1R M74HC251C1R DESCRIPTION The M54/74HC251 is a high speed CMOS 8-CHANNEL MULTIPLEXER (3-STATE) fabricated in silicon 2 gate C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. This multiplexer features both true (Y) and complement (W) outputs as well as STROBE input. The STROBE must be a low logic level to enable this device. When the STROBE input is high, both outputs are in the high impedance state. When enabled, address information on the data select inputs determines which data input is routed to Y and W. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTIONS (top view) INPUT AND OUTPUT EQUIVALENT CIRCUIT NC = No Internal Connection February 1993 1/11 M54/M74HC251 TRUTH TABLE INPUTS C B A X X X H Z Z L L L L L H L L D0 D1 D0 D1 L H L L D2 D2 L H H L D3 D3 H L L L D4 D4 H H L H H L L L D5 D6 D5 D6 H H H L D7 D7 X: Don’t Care Z: HIGH Impedance LOGIC DIAGRAM 2/11 OUTPUS STROBE S Y W M54/M74HC251 PIN DESCRIPTION IEC LOGIC SYMBOL PIN No SYMBOL NAME AND FUNCTION 4, 3, 2, 1, 15, 14, 13, 12 D0 to D7 Multiplexer Inputs 5 6 Y W Multiplexer Output Complementary Multiplexer Output 7 STROBE 11, 10, 9 A, B, C 8 16 GND V CC 3 State Output Enable Input Select Inputs Ground (0V) Positive Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value -0.5 to +7 Unit V VI DC Input Voltage -0.5 to VCC + 0.5 V VO IIK DC Output Voltage DC Input Diode Current -0.5 to VCC + 0.5 ± 20 V mA IOK DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin DC VCC or Ground Current ± 25 ± 50 mA mA 500 (*) mW IO ICC or IGND PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec) -65 to +150 300 o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Top Output Voltage Operating Temperature: M54HC Series M74HC Series tr, tf Input Rise and Fall Time Value 2 to 6 Unit V 0 to VCC V 0 to VCC -55 to +125 -40 to +85 VCC = 2 V 0 to 1000 VCC = 4.5 V VCC = 6 V 0 to 500 0 to 400 V C o C o ns 3/11 M54/M74HC251 DC SPECIFICATIONS Test Conditions Symbol VIH V IL Parameter High Level Input Voltage Low Level Input Voltage Value VCC (V) TA = 25 oC 54HC and 74HC Min. Typ. Max. 2.0 1.5 1.5 1.5 4.5 6.0 3.15 4.2 3.15 4.2 3.15 4.2 High Level Output Voltage 0.5 0.5 0.5 4.5 1.35 1.35 1.35 2.0 4.5 6.0 4.5 VOL Low Level Output Voltage 6.0 2.0 4.5 6.0 4.5 6.0 II IOZ ICC 4/11 Input Leakage Current 3 State Output Off State Current Quiescent Supply Current 1.8 1.8 Unit V 2.0 6.0 V OH -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. V 1.8 1.9 2.0 1.9 1.9 VI = IO=-20 µA VIH or V IL IO=-4.0 mA 4.4 5.9 4.5 6.0 4.4 5.9 4.4 5.9 4.18 4.31 4.13 4.10 IO=-5.2 mA 5.68 5.8 0.0 5.63 5.60 V VI = IO= 20 µA VIH or V IL IO= 4.0 mA 0.1 0.1 0.1 0.0 0.1 0.1 0.1 0.0 0.17 0.1 0.26 0.1 0.33 0.1 0.40 IO= 5.2 mA 0.18 V 0.26 0.33 0.40 VI = VCC or GND ±0.1 ±1 ±1 µA VI = VIH or VIL VO = VCC or GND 6.0 VI = VCC or GND ±0.5 ±5.0 ±10 µA 4 40 80 µA 6.0 6.0 M54/M74HC251 AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions o TA = 25 C 54HC and 74HC Value -40 to 85 oC -55 to 125 oC 74HC 54HC Symbol Parameter VCC (V) tTLH tTHL Output Transition Time 2.0 4.5 Typ. 30 8 Max. 75 15 tPLH tPHL Propagation Delay Time (D - Y, W) 6.0 2.0 4.5 6.0 7 64 16 14 13 130 26 22 16 165 33 28 19 195 39 33 tPLH tPHL Propagation Delay Time (A, B, C - Y, W) tPZL tPZH Output Enable Time 2.0 4.5 6.0 2.0 4.5 80 20 17 36 11 160 32 27 90 18 200 40 34 115 23 240 48 41 135 27 tPLZ tPHZ Output Disable Time 9 26 13 11 15 85 17 14 20 105 21 18 23 130 26 22 ns 5 62 10 10 10 pF CIN CPD (*) 6.0 2.0 4.5 6.0 Input Capacitance Power Dissipation Capacitance Min. RL = 1 KΩ RL = 1 KΩ Min. Max. 95 19 Min. Max. 110 22 Unit ns ns ns ns pF (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC TEST WAVEFORM ICC (Opr.) * INPUT WAVEFORM TIME IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 5/11 M54/M74HC251 SWITCHING CHARACTERISTICS TEST WAVEFORM 6/11 M54/M74HC251 Plastic DIP16 (0.25) MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.77 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L Z 3.3 0.130 1.27 0.050 P001C 7/11 M54/M74HC251 Ceramic DIP16/1 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 20 0.787 B 7 0.276 D E 3.3 0.130 0.38 e3 0.015 17.78 0.700 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 0.51 1.27 0.020 0.050 N P Q 10.3 7.8 8.05 5.08 0.406 0.307 0.317 0.200 P053D 8/11 M54/M74HC251 SO16 (Narrow) MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.004 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 9.8 E 5.8 10 0.385 6.2 0.228 0.393 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.62 0.024 8° (max.) P013H 9/11 M54/M74HC251 PLCC20 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A 10/11 M54/M74HC251 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11