MSC82302 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .. .. PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 1.8 W MIN. WITH 10.0 dB GAIN .250 2LFL (S010) hermetically sealed ORDER CODE MSC82302 BRANDING 82302 PIN CONNECTION DESCRIPTION The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82302 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Value Unit 6.0 W Device Current* 300 mA Collector-Supply Voltage* 26 V TJ Junction Temperature 200 °C T STG Storage Temperature − 65 to +200 °C 25 °C/W PDISS IC VCC Parameter Power Dissipation* (TC ≤ 50°C) THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation October 1992 1/4 MSC82302 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 1mA IE = 0mA 44 — — V BVEBO IE = 1mA IC = 0mA 3.5 — — V BVCER IC = 5mA RBE = 10Ω 44 — — V I CBO VCB = 22V — — 0.5 mA hFE VCE = 5V 30 — 300 — IC = 100mA DYNAMIC Symbol 2/4 Value Test Conditions Min. Typ. Max. Unit POUT ηc f = 2.3 GHz PIN = 0.18 W VCC = 22 V 1.8 — — W f = 2.3 GHz PIN = 0.18 W VCC = 22 V 40 — — % GP f = 2.3 GHz PIN = 0.18 W VCC = 22 V 10.0 — — dB COB f = 1 MHz VCB = 22 V — — 3.5 pF MSC82302 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN ZIN H TYPICAL COLLECTOR LOAD IMPEDANCE M L ZCL ZCL L FREQ. ZIN (Ω) ZCL (Ω) L = 2.0 GHz 7.0 + j 15.5 6.0 + j 7.0 M = 2.15 GHz 7.5 + j 18.0 4.5 + j 3.5 H = 2.3 GHz 7.0 + j 19.5 3.0 + j 1.0 M H PIN = 0.18 W VCC = 22 V Normalized to 50 ohms TEST CIRCUIT Ref: Dwg. No. C125561 All dimensions are in inches Frequency 2.3 GHz RF Amplifier Power Output Test 3/4 MSC82302 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4