MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN .280 4LSL (S051) epoxy sealed ORDER CODE MSC81035MP BRANDING 81035MP PIN CONNECTION DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP offers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MSC81035MP is housed in the IMPAC package with internal input matching. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 150 W Device Current* 3.0 A Collector-Supply Voltage* 55 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +150 °C 1.0 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. October 1992 1/4 MSC81035MP ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 10mA IE = 0mA 65 — — V BVEBO IE = 1mA IC = 0mA 3.5 — — V BVCER IC = 10mA RBE = 10Ω 65 — — V ICES VBE = 0V VCE = 50V — — 5 mA hFE VCE = 5V IC = 500mA 15 — 120 — DYNAMIC Symbol Value Test Conditions Typ. Max. Unit POUT ηc f = 1025 — 1150 MHz PIN = 3.0W VCC = 50V 35 40 — W f = 1025 — 1150 MHz PIN = 3.0W VCC = 50V 10.7 11.2 — % GP f = 1025 — 1150 MHz PIN = 3.0W VCC = 50V 43 48 — dB Note: Pulse W idth Duty Cycle = = 10 µ Sec 1% TYPICAL PERFORMANCE TYPICAL BROADBAND POWER AMPLIFIER 2/4 Min. MSC81035MP IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN ZIN H TYPICAL COLLECTOR LOAD IMPEDANCE L M ZCL ZCL L M FREQ. Z IN (Ω) ZCL (Ω) L = 1025 MHz 2.6 + j 8.3 7.7 + j 2.0 M = 1090 MHz 2.8 + j 8.7 7.1 + j 1.0 H = 1150 MHz 3.2 + j 4.4 6.5 − j 0.5 H PIN = 3.0 W VCC = 50 V Normalized to 50 ohms TEST CIRCUIT Ref.: Dwg. No. 101 002888 All dimensions are in inches. 3/4 MSC81035MP PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4