MSC1000M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .. .. . RUGGEDIZED VSWR ∞:1 INPUT MATCHING LOW THERMAL RESISTANCE CLASS A OPERATION POUT = 0.6 W MIN. WITH 10.8 dB GAIN .280 2LFL (S058) epoxy sealed ORDER CODE MSC1000M BRANDING 1000M PIN CONNECTION DESCRIPTION The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications. This device is capable of withstanding a ∞:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic wire bonding techniques ensure high reliability and product consistency. The MSC1000M is housed in the IMPAC™ package with internal input matching. 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCE TJ TSTG Parameter Value Unit — W Device Current* 300 mA Collector-Emitter Bias Voltage* 20 V Junction Temperature (Pulsed RF Operation) 200 °C − 65 to +150 °C 35 °C/W Power Dissipation* (See Safe Area) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation October 1992 1/5 MSC1000M ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 1mA IE = 0mA 50 — — V BVEBO IE = 1mA IC = 0mA 3.5 — — V BVCEO IC = 5mA IB = 0mA 20 — — V ICES VCE = 28V — — 1.0 mA hFE VCE = 5V 15 — 120 — IC = 100mA DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT f = 1025 — 1150 MHz PIN = 50 mW VCE = 18 V 0.6 0.85 — W GP f = 1025 — 1150 MHz PIN = 50 mW VCE = 18 V 10.8 12.3 — dB 10 µ Sec 1% = = TYPICAL PERFORMANCE Note: Pulse Width Duty Cycle IC = 120mA BROADBAND POWER AMPLIFIER NARROWBAND POWER OUTPUT vs FREQUENCY MAXIMUM OPERATING AREA for FORWARD BIAS OPERATION 2/5 MSC1000M TYPICAL S−PARAMETERS S11 S22 VCE = 18 V IC = 120 mA Zg = 50 ohms S21 S12 3/5 MSC1000M TEST CIRCUIT Ref.: Dwg No. C127297 All dimensions are in inches. PACKAGE MECHANICAL DATA 4/5 MSC1000M Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5