PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION SWTCHING POWER TRANSISTORS DRIVER CI R CU I T S ( SERI E S DI O D ES IN ANTISATURATION CLAMP SPEED UP DIODE IN DISCRETE DARLINGTON...) THYRISTORS GATE DRIVER CIRCUITS HIGH FREQUENCY RECTIFICATION F 126 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IFRM Repetive Peak Forward Current tp ≤ 20µs 20 A IF (AV) Average Forward Current* Ta = 25°C δ = 0.5 1 A IFSM Surge non Repetitive Forward Current tp = 10ms Sinusoidal 20 A Ptot Power Dissipation* Ta = 25°C 1.7 W Tstg Tj Storage and Junction Temperature Range - 40 to 125 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C Symbol Parameter PLQ 08 PLQ 1 Unit VRRM Repetitive Peak Reverse Voltage 80 100 V VRSM Non Repetitive Peak Reverse Voltage 80 100 V THERMAL RESISTANCE Symbol Rth (j - a) Parameter Junction-ambient* Value Unit 60 °C/W * On infinite heatsink with 10mm lead length. November 1994 1/5 PLQ 08/PLQ 1 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF Tj = 25°C IF = 1A Max. Unit 10 µA 0.5 mA 1.1 V Max. Unit RECOVERY CHARACTERISTICS Symbol 2/5 Test Conditions Min. Typ. trr Tj = 25°C VR = 30V IF = 1A See figure 12 diF/dt = - 50A/µs 50 ns tfr Tj = 25°C Measured at 1.1 x VF IF = 1A tr = 20ns 50 ns PLQ 08/PLQ 1 Figure 1. Power losses versus average current. Figure 2. Allowable DC current versus ambient temperature. Figure 3. Non repetitive surge peak current versus number of cycles. Figure 4. Transient thermal impedance junction-ambient. Printed circuit versus pulse duration (L = 10 mm). Figure 5. Voltage drop versus forward current. Figure 6. Voltage drop versus forward current. 3/5 PLQ 08/PLQ 1 Figure 7. Capacitance versus reverse voltage applied. F ig u re 8. T hermal resis tan ce junction-ambient versus lead length. Figure 9. Recovery time versus diF/dt. Figure 10. Peak reverse current versus diF/dt. Figure 11. Dynamic parameters versus junction temperature. Figure 12. Measurement of trr (fig. 8) and IRM (fig. 10). 4/5 PLQ 08/PLQ 1 PACKAGE MECHANICAL DATA F 126 (Plastic) B A note 1 E B /C O E note 1 /D O O /D note 2 DIMENSIONS REF. Millimeters Inches NOTES Min. Max. Min. Max. A 6.05 6.35 0.238 0.250 1 - The lead diameter ∅ D is not controlled over zone E B 26 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) 1.024 ∅C 2.95 3.05 0.116 0.120 ∅D 0.76 0.86 0.029 0.034 E 1.27 0.050 Cooling method: by convection (method A) Marking: type number Weight: 0.4g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. 5/5