STMICROELECTRONICS BYT01400

BYT01-400
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
1A
VRRM
400 V
Tj (max)
150°C
VF (max)
1.4 V
trr (max)
25 ns
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward & reverse recovery times
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■
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DESCRIPTION
The BYT01-400 which is using ST’s 400V planar
technology, is specially suited for switching mode
base drive & transistor circuits.
The device, which is available in axial (DO-15)
package, is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
)
(s
s
b
O
DO-15
BYT01-400
t
c
u
d
o
r
P
e
t
e
l
o
ABSOLUTE RATINGS (limiting values)
Symbol
s
b
O
Parameter
VRRM
Repetive peak reverse voltage
IF (AV)
Average forward current
TI = 80°C
IFSM
Surge non repetitive forward current
tp = 10ms Sinusoidal
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
October 2001 - Ed: 2A
δ = 0.5
Value
Unit
400
V
1
A
30
A
- 65 to +150
°C
150
°C
1/5
BYT01-400
THERMAL PARAMETERS
Symbol
Rth(j-a)
Parameter
Junction to ambient*
Value
Unit
45
°C/W
* On infinite heatsink with 10mm lead length.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
IR*
Parameters
Test Conditions
Tj = 25°C
Reverse leakage current
Min.
Tj = 25°C
Forward voltage drop
u
d
o
0.1
r
P
e
IF = 1A
let
Tj = 100°C
o
s
b
(s)
Max.
ct
VR = VRRM
Tj = 100°C
VF**
Typ.
1.0
Unit
20
µA
0.5
mA
1.5
V
1.4
Pulse test: * tp = 5ms, δ < 2%
** tp = 380µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.1 x IF(AV) + 0.25 IF2(RMS)
O
)
s
(
t
c
u
d
o
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
ete
trr
l
o
s
b
O
2/5
Pr
Parameter
Reverse recovery
time
Test Conditions
Tj = 25°C
IF = 0.5A IR = 1A
Irr = 0.25A
Min.
Typ.
Max.
Unit
16
25
ns
55
IF = 1A dIF/dt = - 15A/µs
VR = 30V
tfr
Forward recovery
time
Tj = 25°C
IF = 1A dIF/dt = 50A/µs
VFR = 1.1 x VFmax
60
ns
VFP
Forward recovery
voltage
Tj = 25°C
IF = 1A
9.5
V
dIF/dt = 50A/µs
BYT01-400
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5)
PF(av)(W)
IF(av)(A)
1.8
δ = 0.1
δ = 0.05
1.6
δ = 0.2
1.2
δ = 0.5
Rth(j-a)=Rth(j-l)
1.0
1.4
δ=1
1.2
0.8
1.0
0.6
Rth(j-a)=100°C/W
0.8
0.4
0.6
T
0.4
0.2
0.2
IF(av)(A)
tp
0.0
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
)
s
(
ct
Tamb(°C)
δ=tp/T
1.1
0
1.2
25
50
75
100
125
150
u
d
o
Fig. 3: Thermal resistance versus lead length.
r
P
e
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, Lleads = 10mm).
Rth(°C/W)
t
e
l
o
Zth(j-a)/Rth(j-a)
110
1.0
Rth(j-a)
100
s
b
O
0.9
90
0.8
80
)-
70
60
Rth(j-l)
s
(
t
c
50
40
du
30
20
ro
0
5
P
e
10
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
Lleads(mm)
10
0.7
T
δ = 0.1
0.1
tp(s)
Single pulse
δ=tp/T
0.0
15
20
25
t
e
l
o
Fig. 5: Forward voltage drop versus forward current.
s
b
O
1.E-01
1.E+00
1.E+01
1.E+02
tp
1.E+03
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
IFM(A)
10
100.0
F=1MHz
Vosc=30mV
Tj=25°C
9
Tj=100°C
(Typical values)
8
7
10.0
6
Tj=100°C
(Maximum values)
5
4
1.0
3
Tj=25°C
(Maximum values)
2
1
VFM(V)
VR(V)
0
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1
10
100
1000
3/5
BYT01-400
Fig. 7: Forward recovery time versus dIF/dt (90%
confidence).
Fig. 8. Transient peak forward voltage versus
dIF/dt (90% confidence).
tfr(ns)
VFP(V)
15.0
100
IF=1A
Tj=100°C
IF=1A
Tj=100°C
12.5
80
10.0
60
7.5
40
5.0
20
)
s
(
ct
2.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0.0
0
10
20
30
40
50
60
70
80
90
100
Fig. 9: Peak reverse recovery current versus
dIF/dt (90% confidence).
0
10
30
40
50
60
70
u
d
o
80
t
e
l
o
%
IF=1A
dIF/dt=-50A/µs
VR=30V
2.0
100
r
P
e
300
IF=1A
VR=200V
90
Fig. 10: Dynamic parameters versus junction
temperature.
IRM(A)
2.5
20
Qrr
s
b
O
250
)
(s
1.5
Tj=100°C
1.0
0.5
t
c
u
od
trr
200
IRM
150
Tj=25°C
Tj(°C)
dIF/dt(A/µs)
0.0
1
Pr
100
10
e
t
e
ol
100
Fig. 11: Non repetitive surge peak current versus
number of cycles.
s
b
O
IFSM(A)
35
Tj initial=25°C
30
25
20
15
10
5
Number of cycles
0
1
4/5
10
100
1000
25
50
75
100
125
150
BYT01-400
PACKAGE MECHANICAL DATA
DO-15
C
C
A
D
)
s
(
ct
B
u
d
o
DIMENSIONS
REF.
Millimeters
Min.
Max.
Min.
Max.
A
6.05
6.75
0.238
0.266
B
2.95
3.53
0.116
0.139
C
26
31
1.024
1.220
D
0.71
0.88
0.028
let
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■
O
s
b
O
d
o
r
Package
Weight
Base qty
Delivery mode
BYT01-400
DO-15
0.4 g
1000
Ammopack
BYT01-400
DO-15
0.4 g
6000
Tape & Reel
Cooling method: by conduction (method A)
Epoxy meets UL 94,V0
Bending method: Application note AN1471
o
s
b
■
0.035
t
e
l
o
Marking
P
e
BYT01-400RL
)
(s
t
c
u
Ordering code
BYT01-400
r
P
e
Inches
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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