STMICROELECTRONICS BYT30PI

BYT 30PI-1000

FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED: Capacitance 15pF
Insulating voltage 2500 VRSM
A
K
Isolated
DOP3I
(Plastic)
SUITABLE APPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
1000
V
VRSM
Non Repetitive Peak Reverse Voltage
1000
V
IFRM
Repetive Peak Forward Current
375
A
70
A
IF (RMS)
tp ≤ 10µs
RMS Forward Current
IF (AV)
Average Forward Current
Tc = 50°C
δ = 0.5
30
A
IFSM
Surge non Repetitive Forward Current
tp = 10ms
Sinusoidal
200
A
Power Dissipation
Tc = 50°C
60
W
- 40 to +150
°C
Value
Unit
1.6
°C/W
P
Tstg
Tj
Storage and Junction Temperature Range
THERMAL RESISTANCE
Symbol
Rth (j - c)
Parameter
Junction-case
October 1999 - Ed: 2A
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BYT 30PI-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
IR
Test Conditions
Tj = 25°C
Min.
Typ.
VR = VRRM
Max.
Unit
100
µA
5
mA
1.9
V
Tj = 100°C
VF
Tj = 25°C
IF = 30A
1.8
Tj = 100°C
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
Min.
Typ.
Max.
Unit
ns
IF = 1A
diF/dt = - 15A/µs
VR = 30V
165
IF = 0.5A
IR = 1A
Irr = 0.25A
70
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
tIRM
Test Conditions
diF/dt = - 120A/µs
diF/dt = - 240A/µs
IRM
Min.
VCC = 200 V IF = 30A
Lp ≤ 0.05µH Tj = 100°C
See figure 11
Typ.
Max.
Unit
200
ns
19.5
A
120
diF/dt = -120A/µs
22
diF/dt = - 240A/µs
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
C=
VRP
VCC
Test Conditions
Tj = 100°C
diF/dt = - 30A/µs
VCC = 200V
Lp = 5µH
Min.
IF = IF (AV)
See figure 12
Typ.
Max.
Unit
4.5
To evaluate the conduction losses use the following equations:
VF = 1.47 + 0.010 IF
P = 1.47 x IF(AV) + 0.010 IF2(RMS)
Figure 1. Low frequency power losses versus
average current
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Figure 2. Peak current versus form factor
BYT 30PI-1000
Figure 3. Non repetitive peak surge current
versus overload duration
Figure 4. Thermal impedance versus pulse
width
Figure 5. Voltage drop versus forward current
Figure 6. Recovery charge versus diF/dt-
Figure 7. Recovery time versus diF/dt-
Figure 8. Peak reverse current versus diF/dt-
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BYT 30PI-1000
Figure 9. Peak forward voltage versus diF/dt-
Figure 10. Dynamic parameters versus
junction temperature.
Figure 11. Turn-off switching characteristics (without series inductance).
Figure 12. Turn-off switching characteristics (with series inductance)
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BYT 30PI-1000
PACKAGE MECHANICAL DATA : Isolated DOP3I Plastic
REF.
A
B
C
D
E
F
G
H
K
L
N
P
R
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
1.45
1.55
0.057
0.061
14.35
15.60
0.565
0.614
0.5
0.7
0.020
0.028
2.7
2.9
0.106
0.114
15.8
16.5
0.622
0.650
20.4
21.1
0.815
0.831
15.1
15.5
0.594
0.610
3.4
3.65
0.134
0.144
4.08
4.17
0.161
0.164
10.8
11.3
0.425
0.444
1.20
1.40
0.047
0.055
4.60 typ.
0.181 typ.
Cooling method: by conduction (method C)
Marking: type number
Weight: 18.84g
Recommended torque value: 250cm. N
Maximum torque value: 310cm. N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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