SD1398 RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS .. .. .. 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P OUT = 6.0 W MIN. WITH 10.0 dB GAIN .230 6LFL (M142) epoxy sealed ORDER CODE SD1398 BRANDING SD1398 PIN CONNECTION DESCRIPTION The SD1398 is a gold metallized epitaxial silicon NPN transistor designed for high linearity Class AB operation cellular base station applications. The SD1398 can also be operated Class C. The SD1398 is internally input matched and can be used as a driver for the SD1423 or SD1424. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCES Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 3.5 V Device Current 2.4 A Power Dissipation 53 W IC PDISS TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 3.3 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance September 8, 1993 1/6 SD1398 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 5mA IE = 0mA 50 — — V BVCEO IC = 5mA IB = 0mA 24 — — V BVEBO IE = 5mA IC = 0mA 3.5 — — V I CEO VCE = 24V IE = 0mA — — 1.0 mA I CBO VCB = 24V IE = 0mA — — 1.0 mA hFE VCE = 10V IC = 0.1A 20 — 100 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT ηc f = 850 — 960 MHz VCE = 24 V ICQ = 25 mA 6 — — W f = 850 — 960 MHz VCE = 24 V ICQ = 25 mA — 50 — % GP f = 850 — 960 MHz VCE = 24 V ICQ = 25 mA 10 12 — dB COB f = 1 MHz VCB = 24 V — 7.5 8.5 pF Note: P IN = 0.60w TYPICAL PERFORMANCE CLASS AB BROADBAND OUTPUT POWER vs INPUT POWER 2/6 OUTPUT POWER vs INPUT POWER SD1398 IMPEDANCE DATA ZIN ZCL 900 MHz 850 MHz 960 MHz 960 MHz 850 MHz 850 MHz ZIN (Ω) 2.6 + j 5.4 ZCL (Ω) 9.5 + j 13.5 900 MHz 3.3 + j 6.1 9.9 + j 15.0 950 MHz 4.6 + j 5.9 8.6 + j 13.0 FREQ. 900 MHz 3/6 SD1398 TEST CIRCUIT C1, C2 C7, C11 C3 C4, C5 C6, C10 C8 C9 : : : : : : D1 : IN5661 240pF ATC Size A 0.1MFD 50Vdc, CK05 Type 1500pF Feedthru #9900-381-6004 Murata/Erie 0.8 - 8.0pF Johanson Gigatrim 0.01 MFD 100Vdc CK05 Type 10MFD Electrolytic, 63Vdc FB-1, FB-2 FB-3 : 2.5 Turns, #22 AWG, Ferrite Bead : Ferrite Bead L1 Cold End L1 : 3 Turns, #22 AWG, 0.125” I.D. R1 R2 : 150Ω in 5% Carbon Comp : 51Ω , Chip Resistor Board Material: 4/6 Er = 10.2, Height 0.05”, Teflon Glass SD1398 TEST CIRCUIT LAYOUT 5/6 SD1398 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0142 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6