SD1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS .. .. . 1.65 GHz 28 VOLTS CLASS C OPERATION COMMON BASE P OUT = 10 W MIN. WITH 11.0 dB GAIN .250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1897 BRANDING 1897 PIN CONNECTION DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1897 is packaged in a cost-effective epoxy sealed housing. 1. Collector 2. Emitter 3. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.5 V Device Current 2.3 A Power Dissipation 29 W IC PDISS TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 6.0 °C/W THERMAL DATA RTH(j-c) July 1993 Junction-Case Thermal Resistance 1/4 SD1897 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 3mA IE = 0mA 45 — — V BVCEO IC = 3mA IB = 0mA 12 — — V BVEBO IE = 3mA IC = 0mA 3.5 — — V hFE VCE = 5V IC = 600mA 15 — 150 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT f = 1.65 GHz PIN = 0.8 W VCE = 28 V 10 — — W GP ηc f = 1.65 GHz PIN = 0.8 W VCE = 28 V 11 — — dB f = 1.65 GHz PIN = 0.8 W VCE = 28 V 48 — — % TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/4 Unit EFFICIENCY vs POWER INPUT SD1897 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN 1600 MHz ZIN (Ω) 22.0 + j 23.0 3.1 + j 4.0 1650 MHz 28.0 + j 18.0 3.0 + j 2.0 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL ZCL (Ω) POUT = 10 W VCE = 28 V PIN = 0.8 W TEST CIRCUIT C1, C2 : 0.4 - 2.5pF Johanson Variable Capacitor C3 : 100pF Chip Capacitor ATC C4 : Suppression Filters CDI 9900381-6004 L1, L2 : 4 Turns, Choke #28 AWG .080” I.D. Substrate: Er = 10.2, Height .050”, 1 Oz. Cu. All Dimensions in mm unless otherwise specified 3/4 SD1897 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0170 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4