SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS .. .. .. . 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION POUT = 15 W MIN. WITH 8.0 dB GAIN .2 3 0 6 LFL (M11 8 ) epoxy sealed O R DE R CODE SD1423 DESCRIPTION BRANDING SD1423 PIN CONNECTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. 1. Collector 3. Emitter 2. Base ABSOLUTE MAXIMUM RATINGS (T case = 25° C) Symbol Parameter Value Un it VCBO Collector-Base Voltage 48 V VCEO Collector-Emitter Voltage 25 V VCES Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 3.5 V Device Current 2.5 A Power Dissipation 29 W IC PDISS TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C 6 °C/W THERMAL DATA RTH(j-c) August 22, 1996 Junction-Case Thermal Resistance 1/4 SD1423 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC S ym bo l Va lu e Te s t C o n ditio n s Min. Typ . Ma x. Un it BVCBO IC = 5 0mA IE = 0mA 48 50 — V BVCEO IC = 2 0mA IB = 0mA 25 30 — V BVEBO IE = 5mA IC = 0mA 3.5 4.0 — V ICBO VC B = 2 4V IE = 0mA — — 1.0 mA hFE VC E = 1 0V IC = 1 00mA 20 — 100 — DYNAMIC S ym bo l Va lu e Te s t C o nd itio ns Min. Typ. Ma x. POUT f = 9 60 MHz VCC = 24 V ICQ = 75 mA 15 — — W PG ηc f = 9 60 MHz VCC = 24 V ICQ = 75 mA 8 — — dB f = 9 60 MHz VCC = 24 V ICQ = 75 mA 45 50 — % COB f = 1 MHz VCB = 24V — 20 24 pF TYPICAL PERFORMANCE P OWER OUT PUT vs P OWER INP UT IMPEDANCE DATA 900 MHz ZIN (Ω) 1.30 + j 1.98 Z CL (Ω) 3.99 + j 5.55 930 MHz 1.42 + j 2.31 3.18 + j 4.97 960 MHz POUT = 15 W VCE = 75 mA ICQ = 24 V 1.45 + j 2.62 2.96 + j 4.07 FREQ. 2/4 Un it SD1423 TEST CIRCUIT C1, C2 :0.8 - 8.0pfGigatrim Variable Capacitor C3, C6, C7, C8 :100pf ATC Chip Capacitor C4 : 10µF, 63V Electrolytic C5 : 0.1µF Capacitor CK06BX104K D1, D2 :SD1423 trasistors used as diodes L1, L3 :4 Turn, #22 AWG L2 : #22 AWG, Ferrite Core Q1: SD1423 Bias Transistor Q2: SD1423 transistor under test R1 : 1.5 kΩ, 1/4W Resistor R2 : 5KΩ ±5% Potentiometer Board Material: 3M Teflon Fiberglass Er = 2.55, H = .030” TEST CIRCUIT DIMENSIONS All dimensions in mils unless otherwise specified 3/4 SD1423 TEST CIRCUIT LAYOUT PACKAGE MECHANICAL DATA Ref.: UDCS Doc. No.1010941 rev. B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - 4/4