STMICROELECTRONICS SM6T6V220CA

SM6T6V8A/220A
SM6T6V8CA/220CA
®
TRANSILTM
FEATURES
■
■
■
■
■
■
PEAK PULSE POWER : 600 W (10/1000µs)
BREAKDOWN VOLTAGE RANGE :
From 6.8V to 220 V.
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
SMB
(JEDEC D0-214AA)
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly suited to protect voltage sensitive devices
such as MOS Technology and low voltage supplied IC’s.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Peak pulse power dissipation (see note 1)
Tj initial = Tamb
Power dissipation on infinite heatsink
Tamb = 50°C
IFSM
Non repetitive surge peak forward
current for unidirectional types
tp = 10ms
Tj initial = Tamb
Tstg
Tj
Storage temperature range
Maximum junction temperature
TL
Maximum lead temperature for soldering during 10 s.
PPP
P
Value
Unit
600
W
5
W
100
A
- 65 to + 175
150
°C
°C
260
°C
Value
Unit
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-l)
Junction to leads
20
°C/W
Rth (j-a)
Junction to ambient on printed circuit on recommended pad
layout
100
°C/W
August 2001- Ed: 5A
1/5
SM6Txx
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current @ VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
VCL
Uni
Mardirectional king
SM6T6V8A DE
SM6T7V5A DG
SM6T10A DP
SM6T12A DT
SM6T15A DX
SM6T18A EE
SM6T22A EK
SM6T24A EM
SM6T27A EP
SM6T30A ER
SM6T33A ET
SM6T36A EV
SM6T39A EX
SM6T68A FQ
SM6T75A FS
SM6T100A FY
SM6T150A GL
SM6T200A GU
SM6T220A GW
Mar- µA
king
LE 1000
LG
500
LP
10
LT
5
LX
1
ME
1
MK
1
MM
1
MP
1
MR
1
MT
1
MV
1
MX
1
NQ
1
NS
1
NY
1
OL
1
OU
1
OW
1
V
5.8
6.4
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
64.1
85.5
128
171
188
VBR
@
min nom max
note2
V
V
V
6.45
7.13
9.5
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
71.3
95.0
143
190
209
6.8
7.5
10
12
15
18
22
24
27
30
33
36
39
68
100
150
200
220
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
78.8
105
158
210
231
IR
VCL @ IPP
VCL @ IPP
mA
max
10/1000µs
V
A
max
8/20µs
V
A
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10.5 57
11.3 53
14.5 41
16.7 36
21.2 28
25.2 24
30.6 20
33.2 18
37.5 16
41.5 14.5
45.7 13.1
49.9 12
53.9 11.1
92
6.5
103 5.8
137 4.4
207 2.9
274 2.2
328
2
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
134
178
265
353
388
298
276
215
184
147
123
102
93
83
75
68
62
57
33
30
22.5
15
11.3
10.3
αT
C
max
typ
note3 note4
10-4/°C pF
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.5
10.6
10.8
10.8
10.8
4000
3700
2800
2300
1900
1600
1350
1250
1150
1075
1000
950
900
625
575
500
400
350
330
Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
10 s
PULSE WAVEFORM 10/1000 s
50
0
t
1000 s
2/5
V
I PP
% I PP
Note 2 :
Note 3 :
Note 4 :
VF
I RM
max
Bi
directional
SM6T6V8CA
SM6T7V5CA
SM6T10CA
SM6T12CA
SM6T15CA
SM6T18CA
SM6T22CA
SM6T24CA
SM6T27CA
SM6T30CA
SM6T33CA
SM6T36CA
SM6T39CA
SM6T68CA
SM6T75CA
SM6T100CA
SM6T150CA
SM6T200CA
SM6T220CA
VBR
V RM
IRM @ VRM
Types
100
I
IF
Pulse test : tp < 50 ms.
∆VBR = αT * (Tamb - 25) * VBR(25°C).
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
SM6Txx
Fig. 2 : Peak pulse power versus exponential pulse duration.
Fig. 3 :
Clamping voltage versus peak pulse current.
Exponential waveform tp = 20 µs ________
tp = 1 ms ——————tp = 10 ms ...............
Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆VBR = αT * [Tamb -25] * VBR(25°C)
For intermediate voltages, extrapolate the given results.
3/5
SM6Txx
Fig. 4a : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 5 : Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig. 6 : Transient thermal impedance junction-ambient versus pulse duration.
Mounting on FR4 PC Board with Recommended
pad layout.
Fig. 7 : Relative variation of leakage current
versus junction temperature.
4/5
SM6Txx
ORDER CODE
SM
6
T
100
C
A
BIDIRECTIONAL
No suffix: Unidirectional
SURFACE MOUNT
600W
BREAKDOWN VOLTAGE
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
PACKAGE MECHANICAL DATA
SMB (Plastic)
DIMENSIONS
E1
REF.
D
E
c
A1
A2
b
L
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
FOOTPRINT DIMENSIONS (Millimeter)
SMB Plastic.
2.3
Packaging : standard packaging is tape and reel.
SOD15 = Standard packaging is in Film.
Weight = 0.12 g
1.52
2.75
1.52
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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